MITSUBISHI CM600DY-34H User Guide

MITSUBISHI HVIGBT MODULES

CM600DY-34H

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

INSULATED TYPE

CM600DY-34H

● IC...................................................................600A

HIGH POWER SWITCHING USE

● V

CES ....................................................... 1700V

● Insulated T ype

● 2-elements in a pack

APPLICATION

Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130

6 - M4 NUTS

114

57

±0.25

E1

C1

CM

E1 E2

C1

G1 G2

16

11.85

18

55.2

C2

C2

E2

57

±0.25

4440

5753

4 - M8 NUTS

E1

20

±0.25

30

124

6 - φ 7 MOUNTING HOLES

140

G1

C1

14

11.5

E1

C1

CIRCUIT DIAGRAM

5

35

C2

C2

G2

E2

E2

38

5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

28

LABEL

31.5

Mar. 2003

MITSUBISHI HVIGBT MODULES

CM600DY-34H

HIGH POWER SWITCHING USE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

MAXIMUM RATINGS (Tj = 25°C)

Symbol Item Conditions UnitRatings
VCES
VGES
IC
ICM
IE
IEM
PC
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

(Note 2)

Emitter current

(Note 2)

Maximum collector dissipation

(Note 3)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Mass

VGE = 0V

CE = 0V

V
DC, T

C = 95°C

Pulse (Note 1)

Pulse (Note 1)

C = 25°C, IGBT part

T

—

—
Charged part to base plate, rms, sinusoidal, AC 60Hz 1min.
Main terminals screw M8
Mounting screw M6
Auxiliary terminals screw M4
Typical value

–40 ~ +150
–40 ~ +125

6.67 ~ 13.00

2.84 ~ 6.00

0.88 ~ 2.00

INSULATED TYPE

1700

±20
600

1200

600
1200
6900

4000

N·m
N·m
N·m

1.5

V
V
A
A
A
A

W

°C
°C

V

kg

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
VEC
trr
Qrr
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)

Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.

Collector cutoff current
Gate-emitter
threshold voltage
Gate-leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time

(Note 2)

Emitter-collector voltage

(Note 2)

Reverse recovery time

(Note 2)

Reverse recovery charge
Thermal resistance

Contact thermal resistance

2. I

E, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Item Conditions

V

CE = VCES, VGE = 0V

IC = 60mA, VCE = 10V
V

GE = VGES, VCE = 0V

T

j = 25°C
j = 125°C

T

CE = 10V

V
V

GE = 0V
CC = 850V, IC = 600A, VGE = 15V

V
V

CC = 850V, IC = 600A

V

GE1 = VGE2 = 15V

R

G = 3.3Ω

I

C = 600A, VGE = 15V (Note 4)

Resistive load switching operation
I

E = 600A, VGE = 0V

I

E = 600A

die / dt = –1200A / µs
Junction to case, IGBT part (Per 1/2 module)
Junction to case, FWDi part (Per 1/2 module)
Case to fin, conductive grease applied (Per 1/2 module)

j) should not increase beyond 150°C.

Min Typ Max

Limits

—

—

5.54.5 6.5

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

—

2.75

3.30
70

10.0

3.8

3.3
—
—
—
—

2.40
—

100
—
—

0.016

0.018

0.056

15

0.5

3.58
—
—
—
—
—

1.20

1.50

2.00

0.60

3.12

2.00
—

—

Unit

mA

V

µA

V

nF
nF
nF

µC
µs
µs
µs
µs

V

µs
µC

K/W
K/W
K/W

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Mar. 2003