CM600DU-24NF
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
¡IC ...................................................................600A
CES ......................................................... 1200V
¡V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
140
130
±0.25
110
43.836
(26)(26) (26)
20
65
C2E
E2
C1
4-M4 NUTS 3-M8 NUTS
10
11.513.8
(15)
9
G2E2G1 E1
±0.25
PPS
(15)
110
14.5 40 14.5 20.4 10
130
LABEL
Dimensions in mm
Tc measured point
(Base plate)
Tc measured point
(Base plate)
4-φ6.5MOUNTING HOLES
E2 G2G1 E1
+1.0
–0.5
+1.0
–0.5
35
8
24.5
C2E1
E2
CIRCUIT DIAGRAM
C1
Jun. 2010
1
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol Parameter
CES
V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Visol
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Total power dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
—
Mounting torque
—
Weight
ELECTRICAL CHARACTERISTICS
Symbol
ICES
V
GE(th)
IGES
VCEsat
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
R
th(j-c)R
R
th(c-f)
Rth(j-c’)Q
R
G
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*
3 : Case temperature (Tc’) measured point is just under the chips.
*
Note 1. I
Collector-emitter cut-off current
Gate-emitter threshold voltage
Gate-emitter leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
If you use this value, R
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
(Tj = 25°C, unless otherwise specified)
G-E Short
C-E Short
DC, T
C’ = 109°C
Pulse (Note 2)
Pulse (Note 2)
C = 25°C
T
Terminals to base plate, f = 60Hz, AC 1 minute, RMS
Main terminals M8 screw
Mounting to heat sink M6 screw
G(E) Terminal M4 screw
Typical value
(Tj = 25°C, unless otherwise specified)
Parameter
CE = VCES, G-E short
V
C = 60mA, VCE = 10V
I
GE = VGES, C-E short
±V
C = 600A, VGE = 15V
I
CE = 10V
V
G-E short
CC = 600V, IC = 600A, VGE = 15V
V
V
CC = 600V, IC = 600A
V
GE = ±15V
R
G = 1.0Ω, Inductive load
I
E = 600A
I
E = 600A, G-E short
*1
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied*2 (1/2 module)
Case temperature measured point is just under the chips
th(f-a) should be measured just under the chips.
j) should not increase beyond 150°C.
Conditions UnitRating
*3
Conditions
–40 ~ +150
–40 ~ +125
Min. Max.
—
68
—
T
j = 25°C
T
j = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
j) does not exceed Tjmax rating.
1200
±20
600
1200
600
1200
2080
V
V
A
A
A
A
W
°C
°C
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
1200
Limits
Typ.
—
V
N • m
N • m
N • m
g
Unit
1
mA
7V
—
1.95
2.15
—
—
—
4000
—
—
—
—
—
28
—
—
—
0.019
—
—
0.5
2.65
—
140
12
2.7
—
800
180
900
350
300
—
3.35
0.06
0.11
—
0.023
10
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
*3
K/W
Ω
Jun. 2010
2
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
1200
V
GE
(A)
C
1000
800
600
20V
=
(TYPICAL)
12
15
13
Tj = 25°C
11
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
(V)
CE sat
VOLTAGE CHARACTERISTICS
4
V
GE
3
2
(TYPICAL)
= 15V
400
200
COLLECTOR CURRENT I
0
046810
2
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
(V)
8
CE sat
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE V
IC = 600A
CE
Tj = 25°C
IC = 1200A
IC = 240A
GE
(V)
10
1
COLLECTOR-EMITTER
9
(V)
SATURATION VOLTAGE V
0
200
0 400 1200800 1000600
COLLECTOR CURRENT IC (A)
Tj = 25°C
T
j
= 125°C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
4
10
7
5
3
(A)
2
E
3
10
7
5
3
2
2
10
7
5
EMITTER CURRENT I
3
2
1
2012 146810 16 18
10
012 435
EMITTER-COLLECTOR VOLTAGE V
Tj = 25°C
T
j
= 125°C
EC
(V)
CAPACITANCE–V
CHARACTERISTICS
3
10
7
5
(nF)
3
2
res
2
10
, C
7
5
oes
3
, C
2
ies
1
10
7
5
3
2
0
10
7
5
3
2
CAPACITANCE C
10
V
GE
–1
–1
10
2
(TYPICAL)
= 0V
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
10
CE
1
C
ies
C
oes
C
res
357
CE
10
(V)
SWITCHING CHARACTERISTICS
HALF-BRIDGE
4
10
Conditions:
7
5
V
CC
3
T
j
= 125°C, Inductive load
2
3
10
7
5
3
2
2
10
7
5
SWITCHING TIME (ns)
3
2
1
2
10
10
1
(TYPICAL)
= 600V, VGE = ±15V, RG = 1Ω
t
d(off)
t
d(on)
t
f
t
r
2
10
57
23 5723
10
3
COLLECTOR CURRENT IC (A)
Jun. 2010
3
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
(A)
rr
7
(ns)
rr
5
3
2
2
10
7
5
3
2
REVERSE RECOVERY TIME t
1
10
REVERSE RECOVERY CURRENT l
1
10
(TYPICAL)
23 57
10
2
Conditions:
V
V
R
T
Inductive load
23 57
EMITTER CURRENT I
CC
= 600V
GE
= ±15V
G
= 1Ω
j
= 25°C
E
(A)
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
10
10
10
10
1
–1
7
5
3
2
–2
7
5
3
2
–3
–3
–3
10
0
10
7
5
3
I
rr
t
rr
3
10
th (j–c)
2
–1
10
7
5
3
2
IGBT part:
–2
10
Per unit base =
7
R
5
NORMALIZED TRANSIENT
FWDi part:
3
Per unit base =
THERMAL IMPEDANCE Z
2
R
–3
10
–2
23 57 23 57 23 57 2 3 57
10
th(j– c)
= 0.06K/W
th(j– c)
= 0.11K/W
10
10
–1
–5
0
10
Single Pulse
T
C
= 25°C
–4
23 57 23 57
10
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
(V)
GE
16
VCC = 400V
12
8
4
GATE-EMITTER VOLTAGE V
0
0 1000 60002000 4000 50003000
GATE CHARGE QG (nC)
VCC = 600V
Jun. 2010
4
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