MITSUBISHI CM600DU-24NF User Guide
CM600DU-24NF
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
¡IC ...................................................................600A
CES ......................................................... 1200V
¡V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
140
130
±0.25
110
43.836
(26)(26) (26)
20
65
C2E
E2
C1
4-M4 NUTS 3-M8 NUTS
10
11.513.8
(15)
9
G2E2G1 E1
±0.25
PPS
(15)
110
14.5 40 14.5 20.4 10
130
LABEL
Dimensions in mm
Tc measured point
(Base plate)
Tc measured point
(Base plate)
4-φ6.5MOUNTING HOLES
E2 G2G1 E1
+1.0
–0.5
+1.0
–0.5
35
8
24.5
C2E1
E2
CIRCUIT DIAGRAM
C1
Jun. 2010
1
MITSUBISHI IGBT MODULES
CM600DU-24NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol Parameter
CES
V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Visol
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Total power dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
—
Mounting torque
—
Weight
ELECTRICAL CHARACTERISTICS
Symbol
ICES
V
GE(th)
IGES
VCEsat
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
R
th(j-c)R
R
th(c-f)
Rth(j-c’)Q
R
G
1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
*
3 : Case temperature (Tc’) measured point is just under the chips.
*
Note 1. I
Collector-emitter cut-off current
Gate-emitter threshold voltage
Gate-emitter leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
If you use this value, R
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temperature (T
3. Junction temperature (T
(Tj = 25°C, unless otherwise specified)
G-E Short
C-E Short
DC, T
C’ = 109°C
Pulse (Note 2)
Pulse (Note 2)
C = 25°C
T
Terminals to base plate, f = 60Hz, AC 1 minute, RMS
Main terminals M8 screw
Mounting to heat sink M6 screw
G(E) Terminal M4 screw
Typical value
(Tj = 25°C, unless otherwise specified)
Parameter
CE = VCES, G-E short
V
C = 60mA, VCE = 10V
I
GE = VGES, C-E short
±V
C = 600A, VGE = 15V
I
CE = 10V
V
G-E short
CC = 600V, IC = 600A, VGE = 15V
V
V
CC = 600V, IC = 600A
V
GE = ±15V
R
G = 1.0Ω, Inductive load
I
E = 600A
I
E = 600A, G-E short
*1
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to heat sink, Thermal compound Applied*2 (1/2 module)
Case temperature measured point is just under the chips
th(f-a) should be measured just under the chips.
j) should not increase beyond 150°C.
Conditions UnitRating
*3
Conditions
–40 ~ +150
–40 ~ +125
Min. Max.
—
68
—
T
j = 25°C
T
j = 125°C
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
j) does not exceed Tjmax rating.
1200
±20
600
1200
600
1200
2080
V
V
A
A
A
A
W
°C
°C
2500
8.8 ~ 10.8
3.5 ~ 4.5
1.3 ~ 1.7
1200
Limits
Typ.
—
V
N • m
N • m
N • m
g
Unit
1
mA
7V
—
1.95
2.15
—
—
—
4000
—
—
—
—
—
28
—
—
—
0.019
—
—
0.5
2.65
—
140
12
2.7
—
800
180
900
350
300
—
3.35
0.06
0.11
—
0.023
10
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
K/W
K/W
K/W
*3
K/W
Ω
Jun. 2010
2
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