MITSUBISHI CM50MX-24A User Guide
CM50MX-24A
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
C ..................................................................... 50A
¡I
CES ......................................................... 1200V
¡V
¡CIB (3-phase Converter +
3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
0
＊4.06
＊13.09
＊16.9
＊4.2
0
＊11.66
＊15.48
＊23.1
＊26.9
＊58.4
＊34.52
＊38.34
3.5
R(1~2) S(5~6) T(9~10)
* Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection.
53
52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31
54
55
56
57
58
59
60
61
1
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
0
＊15
(7.75)
＊18.8
0.8
P(52~53) P1(54~55)
B(24~25)
GB(35)
N(57~58) N1(60~61)
121.7
＊118.1
±0.5
110
99
94.5
＊28.33
＊32.14
＊47.38
＊51.19
＊30.24
＊34.04
＊45.48
＊49.28
LABEL
GuP(49)
EuP(48)
GuN(34)
CIRCUIT DIAGRAM
＊66.43
＊60.72
＊64.52
＊70.24
＊75.96
＊79.76
GvP(44)
EvP(43)
U(13~14)
GvN(33)
＊81.67
＊85.48
＊89.29
＊93.1
＊96.91
＊95
＊91.2
0.8
GwP(39)
EwP(38)
V(17~18) W(21~22)
GwN(32)
30
29
28
27
26
25
24
23
A
4-φ5.5 MOUNTING HOLES
3.75
0
＊15.48
＊19.28
＊30.72
＊34.52
NTC
E(31)
TH1(29)
TH2(28)
±0.5
62
39
57.5
50
Toleranceotherwisespecified
20.5
17
13
7
(3)
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
Dimensions in mm
(7.4)
1.2
1.15
0.65
(3.81)
TERMINAL t = 0.8
φ4.3
φ2.5
φ2.1
1.5
12.5
SECTION A
＊Pin positions
with tolerance
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
φ0.5
Jan. 2009
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
BRAKE PART
Symbol Parameter Conditions
CES
V
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 97°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
G-E Short
C-E Short
DC, T
C
= 106°C
Pulse
T
C
= 25°C
C
= 25°C
T
Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
1200
±20
50
100
355
50
100
Rating Unit
1200
±20
30
60
260
1200
30
60
V
A
W
A
V
A
W
V
A
CONVERTER PART
Symbol Parameter Conditions
V
E
I
O
I
FSM
I2t
RRM
a
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge forward current
C
urrent square time
3-phase full wave rectifying, T
The sine half wave 1 cycle peak value, f = 60Hz,
non-repetitive
Value for one cycle of surge current
MODULE
Symbol Parameter Conditions
j
T
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Junction temperature
Storage temperature
Isolation voltage
—
Base plate flatness
—
Torque strength
—
Weight
+
–
Heatsinkside
Terminals to base plate, f = 60Hz, AC for 1 minute
On the centerline X, Y
Mounting M5 screw
(Typical)
Y
+：convex
–：concave
X
–
C
= 141°C
(Note. 1)
(Note. 8)
Rating Unit
1600
440
50
500
1040
Rating Unit
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
270
V
Vrms
A
2
A
°C
Vrms
μm
N·m
g
S
+
Heatsinkside
Jan. 2009
2
MITSUBISHI IGBT MODULES
CM50MX-24A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, VGE = 0V
I
C
= 5mA, VCE = 10V
±V
GE
= V
GES
, VCE = 0V
I
C
= 50A, VGE = 15V
C
= 50A, VGE = 15V
I
V
CE
= 10V
V
GE
= 0V
CC
= 600V, IC = 50A, VGE = 15V
V
V
CC
= 600V, IC = 50A
V
GE
= ±15V, RG = 6.2Ω
Inductive load
(I
E
= 50A)
E
= 50A, VGE = 0V
I
E
= 50A, VGE = 0V
I
per 1/6 IGBT
per 1/6 free wheeling diode
T
C
= 25°C, per switch
(Note. 6)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6
—
7
—
2.0
2.2
1.9
—
—
—
250
—
—
—
—
—
2
2.6
2.16
2.5
—
—
0
—
1
8
0.5
2.6
—
—
8.5
0.75
0.17
—
100
50
300
600
200
—
3.4
—
—
0.35
0.63
—
62
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol Parameter Conditions
I
CES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
I
RRM(Note.3)
VFM(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE = VCES, VGE = 0V
I
C = 3mA, VCE = 10V
±V
GE = VGES, VCE = 0V
I
C = 30A, VGE = 15V
C = 30A, VGE = 15V
I
V
CE = 10V
V
GE = 0V
CC = 600V, IC = 30A, VGE = 15V
V
V
R = VRRM
IF = 30A
F = 30A
I
per IGBT
per Clamp diode
T
C = 25°C
CONVERTER PART
Symbol Parameter Conditions
I
RRM
V
R
F
th(j-c)
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
(Note. 1)
V
R
= V
RRM
I
F
= 50A
per Diode
, Tj = 150°C
(Note. 6)
(Note. 6)
T
j = 25°C
T
j = 125°C
Chip
T
j = 25°C
T
j = 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
—
6
7
—
2.0
2.2
1.9
—
—
—
150
—
2.6
2.16
2.5
—
—
0
—
1
8
0.5
2.6
—
—
5.1
0.45
0.1
—
1
3.4
—
—
0.48
0.79
—
100
Limits
Min. Typ. Max.
—
—
—
—
1.2
—
6
1.6
0.33
Unit
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Unit
mA
V
K/W
Jan. 2009
3
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