CM400HX-24A
MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
¡IC ...................................................................400A
CES ......................................................... 1200V
¡V
¡Single
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152
137
121.7
±0.5
110
99
94.5
LABEL
*72.14
*68.33
4-M6 NUTS
24
±0.5
62
39
57.5
23
22
212019181716151413121110987654321
4-φ5.5 MOUNTING HOLES
(102.25)
*95
50
(5.4)
+1
-0.5
12.5
17
(SCREWING DEPTH)
Toleranceotherwisespecified
(24)
(23)
E
E
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
22
(14) (14)
(13.5) (13.5)
46
45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
6.5
(21.14)
C
C
47
48
A
0
*15
(7.75)
*18.8
NTC
TH1
TH2
(1)
(2)G1(15)E1(16)C(22)
CIRCUIT DIAGRAM
17
12
66
12
17
*4.2
3.5
(47)
(48)
0.8
13
17
(20.5)
7
(3)
Dimensions in mm
1.15
0.65
(7.4)
TERMINAL t = 0.8
1.5
12.5
SECTION A
*Pin positions
with tolerance
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
1.2
φ4.3
(3.81)
φ2.5
φ2.1
φ0.5
Jan. 2009
MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
T
j
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
Junction temperature
Storage temperature
Isolation voltage
—
Base plate flatness
—
Torque strength
—
Torque strength
—
Weight
Y
+
–
X
Heatsinkside
–
G-E Short
C-E Short
DC, T
C
= 88°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
Main terminals M6 screw
Mounting M5 screw
(Typical)
+:convex
–:concave
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
(Note. 8)
1200
±20
400
800
2450
400
800
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
3.5 ~ 4.5
2.5 ~ 3.5
330
V
A
W
A
°C
Vrms
μm
N·m
g
+
Heatsinkside
Jan. 2009
2