MITSUBISHI CM400HX-24 User Manual

CM400HX-24A
MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
¡IC ...................................................................400A
CES ......................................................... 1200V
¡V ¡Single
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers, Power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM
152 137
121.7
±0.5
110
99
94.5
LABEL
72.14
68.33
4-M6 NUTS
24
±0.5
62
39
57.5
23
22
212019181716151413121110987654321
4-φ5.5 MOUNTING HOLES
(102.25)
95
50
(5.4)
+1
-0.5
12.5 17
(SCREWING DEPTH)
Toleranceotherwisespecified
(24)
(23)
E
E
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
22
(14) (14)
(13.5) (13.5)
46
45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
6.5
(21.14)
C
C
47
48
A
0
15
(7.75)
18.8
NTC
TH1
TH2
(1)
(2)G1(15)E1(16)C(22)
CIRCUIT DIAGRAM
17
12
66
12
17
4.2
3.5
(47)
(48)
0.8
13
17
(20.5)
7
(3)
Dimensions in mm
1.15
0.65
(7.4)
TERMINAL t = 0.8
1.5
12.5
SECTION A
Pin positions
with tolerance
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
1.2
φ4.3
(3.81)
φ2.5 φ2.1
φ0.5
Jan. 2009
MITSUBISHI IGBT MODULES
CM400HX-24A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
T
j
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Collector-emitter voltage Gate-emitter voltage
Collector current
Maximum collector dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage
Base plate flatness
Torque strength
Torque strength
Weight
Y
+
X
Heatsinkside
G-E Short C-E Short DC, T
C
= 88°C
Pulse T
C
= 25°C
T
C
= 25°C
Pulse
Terminals to base plate, f = 60Hz, AC 1 minute On the centerline X, Y Main terminals M6 screw Mounting M5 screw (Typical)
+:convex –:concave
(Note. 1) (Note. 4)
(Note. 1, 5)
(Note. 1) (Note. 4)
(Note. 8)
1200
±20 400 800
2450
400
800 –40 ~ +150 –40 ~ +125
2500
±0 ~ +100
3.5 ~ 4.5
2.5 ~ 3.5 330
V
A
W
A
°C
Vrms
μm
N·m
g
+
Heatsinkside
Jan. 2009
2
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