MITSUBISHI CM400HX-24 User Manual

CM400HX-24A

MITSUBISHI IGBT MODULES

CM400HX-24A

HIGH POWER SWITCHING USE

¡IC ...................................................................400A

CES ......................................................... 1200V

¡V ¡Single

¡Flatbase Type / Insulated Package /

Copper (non-plating) base plate

¡RoHS Directive compliant

APPLICATION

General purpose Inverters, Servo Amplifiers, Power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM

152 137

121.7

±0.5

110

99

94.5

LABEL

＊72.14

＊68.33

4-M6 NUTS

24

±0.5

62

39

57.5

23

22

212019181716151413121110987654321

4-φ5.5 MOUNTING HOLES

(102.25)

＊95

50

(5.4)

+1

-0.5

12.5 17

(SCREWING DEPTH)

Toleranceotherwisespecified

(24)

(23)

E

Division of Dimension

0.5 to 3

over 3 to 6

over 6 to 30

over 30 to 120

over 120 to 400

22

(14) (14)

(13.5) (13.5)

46

45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

6.5

(21.14)

C

47

48

A

0

＊15

(7.75)

＊18.8

NTC

TH1

TH2

(1)

(2)G1(15)E1(16)C(22)

CIRCUIT DIAGRAM

17

12

66

12

17

＊4.2

3.5

(47)

(48)

0.8

13

17

(20.5)

7

(3)

Dimensions in mm

1.15

0.65

(7.4)

TERMINAL t = 0.8

1.5

12.5

SECTION A

＊Pin positions

with tolerance

Tolerance

±0.2

±0.3

±0.5

±0.8

±1.2

1.2

φ4.3

(3.81)

φ2.5 φ2.1

φ0.5

Jan. 2009

MITSUBISHI IGBT MODULES

CM400HX-24A

HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (T

j

= 25°C, unless otherwise specified)

INVERTER PART

Symbol Parameter Conditions Rating Unit

CES

V V

GES

I

C

I

CRM

P

C

I

E (Note.3)

I

ERM(Note.3)

T

j

T

stg

V

iso

Note. 8: The base plate flatness measurement points are in the following figure.

Collector-emitter voltage Gate-emitter voltage

Collector current

Maximum collector dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage

—

Base plate flatness

—

Torque strength

—

Torque strength

—

Weight

Y

+

–

X

Heatsinkside

–

G-E Short C-E Short DC, T

C

= 88°C

Pulse T

C

= 25°C

T

C

= 25°C

Pulse

Terminals to base plate, f = 60Hz, AC 1 minute On the centerline X, Y Main terminals M6 screw Mounting M5 screw (Typical)

+：convex –：concave

(Note. 1) (Note. 4)

(Note. 1, 5)

(Note. 1) (Note. 4)

(Note. 8)

1200

±20 400 800

2450

400

800 –40 ~ +150 –40 ~ +125

2500

±0 ~ +100

3.5 ~ 4.5

2.5 ~ 3.5 330

V

A

W

A

°C

Vrms

μm

N·m

g

+

Heatsinkside

Jan. 2009

2

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART

Symbol Parameter Conditions

I

CES

V

GE(th)

I

GES

V

CE(sat)

C

ies

C

oes

C

res

Q

G

t

d(on)

t

r

t

d(off)

t

f

t

rr (Note.3)

Q

rr (Note.3)

V

EC(Note.3)

R

lead

R

th(j-c)Q

R

th(j-c)R

R

th(c-f)

R

Gint

R

G

Collector cutoff current Gate-emitter threshold voltage Gate leakage current

Collector-emitter saturation voltage

Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge

Emitter-collector voltage

Module lead resistance Thermal resistance (Junction to case)

(Note. 1) Contact thermal resistance (Case to heat sink)

(Note. 1)

Internal gate resistance

External gate resistance

V

CE

= V

CES

, VGE = 0V

I

C

= 40mA, VCE = 10V

±V

GE

= V

GES

, VCE = 0V

I

C

= 400A, VGE = 15V

C

= 400A, VGE = 15V

I

V

CE

= 10V

V

GE

= 0V

CC

= 600V, IC = 400A, VGE = 15V

V V

CC

= 600V, IC = 400A

V

GE

= ±15V, RG = 0.75Ω

Inductive load

E

= 400A)

(I

E

= 400A, VGE = 0V

I

E

= 400A, VGE = 0V

I Main terminals-chip per IGBT per free wheeling diode

Thermal grease applied

T

C

= 25°C

T

C

= 125°C

(Note. 6)

T

j

= 25°C

T

j

= 125°C

Chip

j

= 25°C

T T

j

= 125°C

Chip

MITSUBISHI IGBT MODULES

CM400HX-24A

HIGH POWER SWITCHING USE

Limits

Min. Typ. Max.

(Note. 6)

(Note. 2)

—

6 — — — — — — — — — — — — — — — — — — — —

—

2.1

4.2

0.75

—

7

—

2.0

2.2

1.9 — — —

2000

— — — — —

13

2.6

2.16

2.5

0.6 — —

0.015

3 6

—

0.5

2.6 — — 66

6.0

1.3 —

660 190 700 600 250

—

3.4 — — —

0.033

0.048

—

3.9

7.8

Unit

mA

1 8

V

μA

V

nF

nC

ns

μC

V

mΩ

K/W

Ω

NTC THERMISTOR PART

Symbol Parameter Conditions

R ΔR/R B

(25/50)

P

25

Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)

Zero power resistance Deviation of resistance B constant Power dissipation

2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: I

E, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

4: Pulse width and repetition rate should be such that the device junction temperature (T 5: Junction temperature (T 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for V

7:

B

(25/50)

R25: resistance at absolute temperature T

50

: resistance at absolute temperature T

R

25

R

= In( )/( )

R

50

j) should not increase beyond 150°C.

1

T

25

50

T

C

= 25°C

T

C

= 100°C, R

100

= 493Ω

Approximate by equation T

C

= 25°C

CE(sat) and VEC)

25

[K]; T

25

= 25 [°C]+273.15 = 298.15 [K]

50

[K]; T

50

= 50 [°C]+273.15 = 323.15 [K]

(Note. 7)

j) dose not exceed Tjmax rating.

Min. Typ. Max.

4.85 –7.3

Limits

5.00 —

—

3375

—

5.15 +7.8

— 10

Unit

kΩ

%

K

mW

Jan. 2009

3

MITSUBISHI IGBT MODULES

CM400HX-24A

HIGH POWER SWITCHING USE

Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)

(152)

(121.7)

(110)

46

45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

0

(62)

(50)

47

48

0

73.6

Tr

Th

74.3

Di

87.9

212019181716151413121110987654321

24

23

22

LABEL SIDE

Each mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NTC thermistor

C

VGE = 0V

IC

V

E

V

C(Cs)

VGE = 15V

G

E(Es)

C(Cs)

G

E(Es)

21.8

35.2

45.0

C

IE

E

0V

VCE(sat) test circuit VEC test circuit

I

10%

E

0A

Irr

t

rr, Qrr

test waveform

trr

t

1/2 ✕ Irr

Qrr = 1/2 ✕ Irr ✕ trr

VGE

0V

–

V

GE

+

V

GE

R

G

V

–

V

GE

Load

VCE

IE

I

VCC+

IC

C

0A

td(on) td(off)

tr

90%

0%

90%

tf

Switching time test circuit and waveforms

Jan. 2009

4

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

800

V

GE

20V

700

(A)

C

600

500

400

300

200

100

COLLECTOR CURRENT I

0

(TYPICAL) Inverter part

=

15

Tj = 25°C

13

12

11

10

9

100 246813579

MITSUBISHI IGBT MODULES

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

4

(V)

3.5

CE(sat)

3

2.5

2

1.5

1

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE V

0

(TYPICAL) Inverter part

V

GE

= 15V

0

100 200 300 400 500 600 700 800

CM400HX-24A

Tj = 25°C T

j

= 125°C

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL) Inverter part

10

Tj = 25°C

(V)

8

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

GATE-EMITTER VOLTAGE VGE (V)

CAPACITANCE CHARACTERISTICS

3

10

7 5

3 2

2

10

7 5

3 2

1

10

7 5

3 2

0

CAPACITANCE (nF)

10

7 5

3 2

–1

10

(TYPICAL) Inverter part

V

GE

= 0V

–1

2

0

10

357 2

10

1

IC = 800A

IC = 400A

IC = 160A

C

ies

C

oes

C

res

357

206 8 10 12 14 16 18

10

COLLECTOR CURRENT I

C

(A)

FREE WHEELING DIODE

FORWARD CHARACTERISTICS

(TYPICAL) Inverter part

3

10

7

5

(A)

E

3

2

10

7

5

3

EMITTER CURRENT I

2

1

10

040.5 1 1.5 2 2.5 3 3.5

EMITTER-COLLECTOR VOLTAGE V

Tj = 25°C T

j

= 125°C

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL) Inverter part

3

10

7

t

2

1

0

10

1

d(on)

23 57

10

2

5

3 2

10

7 5

3 2

10

7 5

SWITCHING TIME (ns)

3 2

2

10

t

d(off)

t

f

t

r

Conditions: V

CC

= 600V

V

GE

= ±15V

R

G

= 0.75Ω

T

j

= 125°C

Inductive load

23 57

10

3

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT I

C

(A)

Jan. 2009

5

MITSUBISHI IGBT MODULES

CM400HX-24A

HIGH POWER SWITCHING USE

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL) Inverter part

4

10

Conditions:

7

V

CC

= 600V

5

V

GE

= ±15V

I

C

= 400A

3

T

j

= 125°C

2

Inductive load

3

10

7

5

3

SWITCHING TIME (ns)

2

10

–1

57

10

0

GATE RESISTANCE R

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

7 5

3 2

2

10

7 5

3 2

1

10

7 5

3

SWITCHING LOSS (mJ/pulse)

2

0

10

(TYPICAL) Inverter part

E

on

E

off

E

Conditions: V

CC

= 600V

V

GE

= ±15V

I

C

, IE = 400A

T

j

= 125°C

rr

Inductive load

–1

57

10

0

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL) Inverter part

2

10

7

5

3

t

d(on)

t

d(off)

t

r

t

f

1

23 5723

10

G

(Ω)

2

E

1

10

7

5

3

2

SWITCHING LOSS (mJ/pulse) l

0

10

off

E

on

E

rr

1

57

10

2

COLLECTOR CURRENT I

EMITTER CURRENT I

Conditions: V

CC

= 600V

V

GE

= ±15V

R

G

= 0.75Ω

T

j

= 125°C

Inductive load

23 5723

C

(A)

E

(A)

10

3

REVERSE RECOVERY CHARACTERISTICS

OF FREE WHEELING DIODE

3

10

7 5

3 2

2

10

7

(ns)

5

rr

3 2

(A), t

rr

1

10

7 5

3 2

0

1

23 5723

10

(TYPICAL) Inverter part

1

57

10

2

t

rr

I

rr

Conditions: V

CC

= 600V

V

GE

= ±15V

R

G

= 0.75Ω

T

j

= 25°C

Inductive load

23 5723

10

3

GATE RESISTANCE R

GATE CHARGE CHARACTERISTICS

(TYPICAL) Inverter part

20

IC = 400A

(V)

GE

VCC = 400V

15

10

5

GATE-EMITTER VOLTAGE V

0

0 500 1000 1500 2000 2500 3000

GATE CHARGE QG (nC)

G

(Ω)

VCC = 600V

0

10

7 5

3

th(j–c)

2

–1

10

7 5

3 2

–2

10

7 5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

2

–3

10

6

EMITTER CURRENT I

E

(A)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

Single pulse, T

C

= 25°C

Inverter IGBT part : Per unit base = R Inverter FWDi part : Per unit base = R

–5

–4

10

23 57

10

–3

23 57

10

–2

23 57

th(j–c) th(j–c)

10

–1

23 57

= 0.051K/W = 0.093K/W

TIME (s)

10

0

23 57

1

10

Jan. 2009

MITSUBISHI CM400HX-24 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual