MITSUBISHI CM400DY-12NF User Manual

CM400DY-12NF

MITSUBISHI IGBT MODULES

CM400DY-12NF

HIGH POWER SWITCHING USE

¡IC...................................................................400A

¡V

CES ............................................................600V

¡Insulated Type
¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

Tc measured point (Base plate)

108

93

±0.25

G2

±0.25

62

48

C2E1 E2 C1

21.5

4-φ6.5 MOUNTING HOLES

–0.5

+1.0

30

7

18

LABEL

18
14 14 14

18

7

E2

E1

G1

242525

3-M6 NUTS

6 615

TAB #110 t=0.5

8.522.2

C2E1

Dimensions in mm

4

30

E2 G2G1 E1

E2

C1

CIRCUIT DIAGRAM

Jul.2004

MITSUBISHI IGBT MODULES

CM400DY-12NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

(Tj = 25°C)

Conditions UnitRatings
G-E Short
C-E Short
DC, T

C’ = 92°C

*3

Pulse (Note 2)

Pulse (Note 2)
T

C = 25°C

Main Terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

1 : Tc measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : Tc’ measured point is just under the chips.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

Parameter

CE = VCES, VGE = 0V

V
I

C = 40mA, VCE = 10V

V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C

CE = 10V

V
V

GE = 0V
CC = 300V, IC = 400A, VGE = 15V

V

CC = 300V, IC = 400A

V
V

GE1 = VGE2 = 15V

R

G = 3.1Ω, Inductive load switching operation

I

E = 400A

E = 400A, VGE = 0V

I

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Test conditions

I

C = 400A, VGE = 15V

j) does not exceed Tjmax rating.

*2

(1/2 module)

600
±20
400
800
400
800

1130
–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
400

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

1.6

Typ.

—

5 7.5

6V

—

1.7

1.7
—
—
—

1600

—
—
—
—
—

6.8
—
—
—

0.04
—
—

0.5

2.2
—
60

7.3

2.4
—

300
200
450
300
250

—

2.6

0.11

0.19
—

0.066
16

1

V
V
A
A
A
A

W

°C
°C

V
N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

*3

°C/W

Ω

Jul.2004

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

800

V

GE

=

(A)

C

20V

600

(TYPICAL)

15

13

Tj = 25°C

12

MITSUBISHI IGBT MODULES

CM400DY-12NF

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

(V)

CE (sat)

VOLTAGE CHARACTERISTICS

4

V

GE

3

(TYPICAL)

= 15V

400

200

COLLECTOR CURRENT I

0

2

046810

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

(V)

8

CE (sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

Tj = 25°C

IC = 400A

IC = 800A

IC = 160A

11

10

8

9

CE

(V)

2

1

COLLECTOR-EMITTER

SATURATION VOLTAGE V

0

200

0 400 800600

COLLECTOR CURRENT IC (A)

Tj = 25°C

j

= 125°C

T

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7
5

(A)

E

3
2

2

10

7
5

3

EMITTER CURRENT I

2

1

2012 146 8 10 16 18

10

012 435

(TYPICAL)

Tj = 25°C

j

= 125°C

T

GATE-EMITTER VOLTAGE V

CAPACITANCE–V
CHARACTERISTICS

2

10

7
5

(nF)

3

res

2

, C

1

10

oes

7

, C

5

ies

3
2

0

10

7
5

3
2

CAPACITANCE C

V

GE

–1

10

–1

2

10

(TYPICAL)

= 0V

0

10

357 2

357 2

COLLECTOR-EMITTER VOLTAGE V

10

CE

1

GE

C

ies

C

oes

C

res

357

(V)

CE

10

(V)

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

t

d(off)

t

d(on)

(TYPICAL)

t

f

t

r

57

10

2

Conditions:
V

CC

= 300V

GE

= ±15V

V

G

= 3.1Ω

R

j

= 125°C

T
Inductive load

23 5723

10

3

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME (ns)

3
2

0

2

10

10

1

COLLECTOR CURRENT IC (A)

Jul.2004

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

3

10

rr (A)

7
5

3
2

2

10

7
5

3
2

REVERSE RECOVERY TIME trr (ns)

1

10

REVERSE RECOVERY CURRENT l

1

10

23 57 10

(TYPICAL)

2

10

Conditions:
V
V
R
T
Inductive load

23 57

EMITTER CURRENT I

Irr
trr

CC = 300V
GE = ±15V
G = 3.1Ω
j = 25°C

E (A)

MITSUBISHI IGBT MODULES

CM400DY-12NF

HIGH POWER SWITCHING USE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

10

10

10

10

10

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

–3

10

0

10

7
5

3

th (j–c)

2

–1

10

7
5

3
2

IGBT part:

–2

10

Per unit base =

7

R

5

NORMALIZED TRANSIENT

3

FWDi part:

3

Per unit base =

THERMAL IMPEDANCE Z

2

R

–3

10

–2

23 57 23 57 23 57 23 57

10

th(j–c)

= 0.11°C/W

th(j–c)

= 0.19°C/W

10

10

–1

–5

0

10

Single Pulse
T

C = 25°C

–4

23 57 23 57

10

TMIE (s)

CHARACTERISTICS

20

IC = 400A

16

12

8

4

GATE-EMITTER VOLTAGE VGE (V)

0

0 1000500 2000 25001500

GATE CHARGE QG (nC)

GATE CHARGE

(TYPICAL)

VCC = 200V

VCC = 300V

Jul.2004