CM400DU-12NFH
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
¡IC...................................................................400A
¡V
CES ............................................................600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
TC measured point
C1
4
G2
E2
E1
G1
2.8
G2E2
C2E1
6156
±0.25
62
48
0.5
E2
CIRCUIT DIAGRAM
0.5 0.5
C1
E1
G1
0.5
14 14 14
CM
C2E1
25 2.521.525
3-M6 NUTS
4-φ6. 5 MOUTING HOLES
18 7 18 7 18
93
108
±0.25
E2
+1.0
29
–0.5
LABEL
7.5
8.5
22
4
Feb.2004
MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
PC’ (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
—
G-E Short
C-E Short
Operation
Pulse (Note 2)
Operation
Pulse (Note 2)
T
C = 25°C
T
C’ = 25°C
*4
Main Terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
Conditions UnitRatings
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
Rth(j-c’)Q
G
R
1 : TC measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
4 : TC’ measured point is just under the chips.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. No short circuit capability is designed.
Parameter
VCE = VCES, VGE = 0V
I
C = 40mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
CE = 10V
V
V
GE = 0V
CC = 300V, IC = 400A, VGE = 15V
V
V
CC = 300V, IC = 400A
V
GE1 = VGE2 = 15V
R
G = 3.1Ω, Inductive load switching operation
I
E = 400A
E = 400A, VGE = 0V
I
*1
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips (1/2 module)
j) should not increase beyond 150°C.
Test conditions
I
C = 400A, VGE = 15V
j) does not exceed Tjmax rating.
*2
(1/2 module)
600
±20
400
800
400
800
960
1640
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Limits
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
Typ.
—
57
6V
—
2.0
1.95
—
—
—
2480
—
—
—
—
—
7.7
—
—
—
0.04
—
—
1
0.5
2.7
—
110
7.2
4.0
—
400
200
700
150
200
—
2.6
0.13
0.18
—
0.076
16
V
V
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
Unit
mA
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
*3
°C/W
Ω
Feb.2004
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
800
700
(A)
C
600
500
400
V
GE
20V
15
(TYPICAL)
11
13
=
8.5
10
9.5
9
8
Tj = 25°C
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
(V)
2.5
CE (sat)
1.5
VOLTAGE CHARACTERISTICS
3
V
GE
2
(TYPICAL)
= 15V
300
200
100
COLLECTOR CURRENT I
0
02345
1 1.5 2.5 3.5 4.50.5
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
(V)
4.5
4
CE (sat)
3.5
3
2.5
2
1.5
COLLECTOR-EMITTER
1
0.5
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE V
7.5
7
CE
Tj = 25°C
IC = 800A
IC = 400A
IC = 160A
GE
(V)
2012 146 8 10 16 18
(V)
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
0 100 200 300 400 500 600 700 800
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
10
0 0.5 1 1.5 2 2.5 3
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
Tj = 25°C
j
= 125°C
T
Tj = 25°C
EC
(V)
CAPACITANCE–V
CHARACTERISTICS
3
10
7
5
(nF)
3
res
2
, C
2
10
oes
7
, C
5
ies
3
2
1
10
7
5
3
2
CAPACITANCE C
10
10
V
GE
0
–1
2
(TYPICAL)
= 0V
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
CE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
7
5
C
ies
C
res
10
1
oes
357
CE
10
2
(V)
C
3
2
2
10
7
5
3
SWITCHING TIME (ns)
2
1
10
1
10
COLLECTOR CURRENT IC (A)
(TYPICAL)
2
10
57
t
d(off)
t
d(on)
t
f
t
r
Conditions:
V
CC
= 300V
GE
= ±15V
V
G
= 3.1Ω
R
j
= 125°C
T
Inductive load
23 5723
10
3
Feb.2004
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
rr (A)
7
5
3
2
2
10
7
5
3
2
REVERSE RECOVERY TIME trr (ns)
1
10
REVERSE RECOVERY CURRENT l
1
10
(TYPICAL)
Conditions:
V
V
R
T
Inductive load
2
23 57 10
10
23 57
EMITTER CURRENT I
Irr
trr
CC = 300V
GE = ±15V
G = 3.1Ω
j = 25°C
E (A)
MITSUBISHI IGBT MODULES
CM400DU-12NFH
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
–3
23 57 2 3 57 23 57 2 3 57
10
0
10
7
5
3
th (j–c)
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
Per unit base =
THERMAL IMPEDANCE Z
2
R
th(j–c)
–3
3
10
(IGBT part )
–2
10
= 0.13°C/W
–1
10
–5
23 57 2 3 57
10
TIME (s)
0
10
Single Pulse
T
C = 25°C
–4
10
10
10
10
10
10
1
–1
7
5
3
2
–2
7
5
3
2
–3
–3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
–3
10
0
10
7
5
3
th (j–c)
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
Per unit base =
THERMAL IMPEDANCE Z
2
R
–3
10
–2
23 57 2 3 57 23 57 2 3 57
10
th(j–c)
= 0.18°C/W
–1
10
–5
23 57 2 3 57
10
TIME (s)
0
10
Single Pulse
T
C = 25°C
–4
10
10
10
10
10
10
GATE CHARGE
CHARACTERISTICS
1
20
IC = 400A
16
–1
7
5
3
2
–2
7
5
3
2
–3
–3
GATE-EMITTER VOLTAGE VGE (V)
12
8
4
0
0
500 1000 1500 2000 2500 3000 3500
(TYPICAL)
VCC = 200V
VCC = 300V
GATE CHARGE QG (nC)
Feb.2004
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