MITSUBISHI CM400DU-12NFH User Guide

CM400DU-12NFH

MITSUBISHI IGBT MODULES

CM400DU-12NFH

HIGH POWER SWITCHING USE

¡IC...................................................................400A

¡V

CES ............................................................600V

¡Insulated Type
¡2-elements in a pack

APPLICATION

High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

TC measured point

C1

4

G2
E2

E1
G1

2.8

G2E2

C2E1

6156

±0.25

62

48

0.5

E2

CIRCUIT DIAGRAM

0.5 0.5

C1

E1
G1

0.5

14 14 14

CM

C2E1

25 2.521.525

3-M6 NUTS

4-φ6. 5 MOUTING HOLES

18 7 18 7 18

93

108

±0.25

E2

+1.0

29

–0.5

LABEL

7.5

8.5

22

4

Feb.2004

MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM400DU-12NFH

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
PC’ (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Weight

—

G-E Short
C-E Short
Operation
Pulse (Note 2)
Operation
Pulse (Note 2)
T

C = 25°C

T

C’ = 25°C

*4

Main Terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value

Conditions UnitRatings

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

1 : TC measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

4 : TC’ measured point is just under the chips.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. No short circuit capability is designed.

Parameter

VCE = VCES, VGE = 0V
I

C = 40mA, VCE = 10V

V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C
CE = 10V

V
V

GE = 0V
CC = 300V, IC = 400A, VGE = 15V

V

V

CC = 300V, IC = 400A

V

GE1 = VGE2 = 15V

R

G = 3.1Ω, Inductive load switching operation

I

E = 400A

E = 400A, VGE = 0V

I

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips (1/2 module)

j) should not increase beyond 150°C.

Test conditions

I

C = 400A, VGE = 15V

j) does not exceed Tjmax rating.

*2

(1/2 module)

600
±20
400
800
400
800
960

1640
–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
400

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

1.6

Typ.

—

57

6V

—

2.0

1.95
—
—
—

2480

—
—
—
—
—

7.7
—
—
—

0.04
—
—

1

0.5

2.7
—

110

7.2

4.0
—

400
200
700
150
200

—

2.6

0.13

0.18
—

0.076
16

V
V
A
A
A

A
W
W

°C
°C

V

N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

*3

°C/W

Ω

Feb.2004