Mitsubishi Electric Corporation Semiconductor Group CM30TF-24H Datasheet

MITSUBISHI IGBT MODULES

CM30TF-24H

MEDIUM POWER SWITCHING USE

INSULA TED TYPE

A
B
C

B

u

PEuPBvPEvPBwPEwP

P

EJ

D

Description:

Mitsubishi IGBT Modules are de­signed for use in switching appli­cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor

H

having a reverse-connected super­fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys­tem assembly and thermal man­agement.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM30TF-24H
is a 1200V (V

), 30 Ampere

CES

Six-IGBT Module.

Type Current Rating V

Amperes (30) Volts (x 50)

CM 30 24

CES

S - DIA.
(2 TYP.)

G

P

(BuP)

GuP

(BuN)

GuN

N

N

N

P

EuP

u

EuN

uvw

uNEu

B

R

(BvP)

GvP

(BvN)

GvN

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.0 127.0
B 4.33±0.01 110.0±0.2
C 3.86 98.0
D 2.20 56.0
E 1.57 40.0
F 1.12 28.5
G 1.04 26.5
H 1.01 25.6

J 0.98 25.0

NBvNEvNBwNEwN

F F KM

R

L

TAB #250, t = 0.8

EvP

v

EvN

R

L

(BwP)

GwP

(BwN)

GwN

Dimensions Inches Millimeters

K 0.85 21.5

L 0.83 21.0
M 0.75 19.0
N 0.71 18.0

P 0.69 17.5
Q 0.65 16.5
R 0.3 7.5

S 0.22 Dia. Dia. 5.5

Q

TAB #110, t = 0.5

R

EwP

w

EwN

Sep.1998

MITSUBISHI IGBT MODULES

CM30TF-24H

MEDIUM POWER SWITCHING USE

INSULA TED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM30TF-24H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C

CM

E

EM

c

Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 390 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(max)

iso

rating.

–40 to 150 °C
–40 to 125 °C

1200 Volts

±20 Volts

30 Amperes

60* Amperes

30 Amperes
60* Amperes
310 Watts

2500 Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. T yp. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 3mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 30A, VGE = 15V – 2.5 3.4** Volts

IC = 30A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

EC

VCC = 600V, IC = 30A, VGE = 15V – 150 – nC

IE = 30A, VGE = 0V – – 3.5 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. T yp. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t

d(on)

Load Rise Time t
Switching Turn-off Delay Time t

d(off)

Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies

oes

res

rr

VGE = 0V, VCE = 10V – – 2.1 nF

r

f

VCC = 600V, IC = 30A, – – 200 ns

V

= V

GE1

= 15V, RG = 10Ω – – 150 ns

GE2

IE = 30A, diE/dt = –60A/µs – – 250 ns

rr

IE = 30A, diE/dt = –60A/µs – 0.22 – µC

– – 6 nF

– – 1.2 nF
– – 100 ns

– – 350 ns

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. T yp. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.042 °C/W

Per IGBT – – 0.50 °C/W

Per FWDi – – 1.40 °C/W

Sep.1998