Mitsubishi Electric Corporation Semiconductor Group CM300HA-24H Datasheet

A
Q M H N
S
MITSUBISHI IGBT MODULES
CM300HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
V–DIA.(4 TYP.)
D
F
X–M4 THD. (2 TYP.)
J
T
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0 B 3.661±0.01 93.0±0.25 C 2.44 62.0 D 1.89±0.01 48.0±0.25 E 1.42 Max. 36.0 Max. F 1.34 34.0 G 1.18 30.0 H 1.14 29.0
J 0.98 Max. 25.0 Max. K 0.94 24.0 L 0.93 23.5
E
CM
G
E
G
E
P B
KK
R
E
C
U
Dimensions Inches Millimeters
M 0.83 21.0 N 0.69 17.5
P 0.63 16.0 Q 0.51 13.0 R 0.43 11.0
S 0.35 9.0
T 0.28 7.0 U 0.12 3.0
V 0.26 Dia. Dia. 6.5 W M6 Metric M6
X M4 Metric M4
G
C
W–M6 THD. (2 TYP.)
E
L
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configura­tion with a reverse-connected su­per-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys­tem assembly and thermal man­agement.
Features:
u Low Drive Power u Low V
CE(sat)
u Discrete Super-Fast Recovery
C
Free-Wheel Diode
u High Frequency Operation u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies
Ordering Information:
Example: Select the complete part module number you desire from the table below -i.e. CM300HA-24H is a 1200V (V
), 300 Ampere Single IGBT
CES
Module.
Type Current Rating V
Amperes Volts (x 50)
CM 300 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM300HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM600HU-12H Units Junction T emperature T Storage T emperature T Collector-Emitter Voltage (G-E SHORT) V Gate-Emitter Voltage (C-E SHORT) V Collector Current (Tc = 25°C) I Peak Collector Current (Tj 150°C) I Emitter Current** (Tc = 25°C) I Peak Emitter Current** I Maximum Collector Dissipation (Tc = 25°C) P
j
stg CES GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal 1.96~2.94 N · m Mounting Torque, M6 Mounting 1.96~2.94 N · m Mounting Torque, M4 Terminal 0.98~1.47 N · m Weight 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
j(max)
rating.
-40 to 150 °C
-40 to 125 °C 1200 Volts
±20 Volts 300 Amperes
600* Amperes
300 Amperes
600* Amperes
2100 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I Gate Leakage Current I Gate-Emitter Threshold Voltage V Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V VGE = V
, VGE = 0V 1.0 mA
CES
, VCE = 0V 0.5 µA
GES
IC = 30mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 300A, VGE = 15V 2.5 3.4** Volts
IC = 300A, VGE = 15V, Tj = 150°C 2.25 Volts Total Gate Charge Q Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 300A, VGE = 15V 1500 nC
IE = 300A, VGE = 0V 3.4 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Resistive Turn-on Delay Time t
d(on)
Load Rise Time t Switching Turn-off Delay Time t Times Fall Time t Diode Reverse Recovery Time t Diode Reverse Recovery Charge Q
ies oes res
r
d(off)
f
rr
rr
VGE = 0V , VCE = 10V 21 nF
VCC = 600V, IC = 300A 500 ns
V
= V
GE1
= 15V, RG = 1.0 350 ns
GE2
IE = 300A, diE/dt = –600A/µs 250 ns IE = 300A, diE/dt = –600A/µs 2.23 µC
–– 60nF
12 nF – 250 ns
350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R Thermal Resistance, Junction to Case R Contact Thermal Resistance R
th(j-c) th(j-c)
th(c-f)
Per Module, Thermal Grease Applied 0.04 °C/W
Per IGBT 0.06 °C/W
Per FWDi 0.12 °C/W
Sep.1998
Loading...
+ 2 hidden pages