T
Measured
C
Point
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
A
D
S (4 - Mounting
Holes)
F
B
E
CM
T
3 - M6 Nuts
C
C2E1
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.87 22.0
G 0.16 4.0
H 0.24 6.0
K 0.71 18.0
Q
K K K
E2
H
QN
P
R
M
L
E2
G2
C1
Dimensions Inches Millimeters
K 0.71 18.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
G
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one
IGBT having a reverse-connected
super-fast recovery free-wheel diode and an anode-collector connected super-fast recovery freewheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Application:
u Brake
Ordering Information:
Example: Select the complete
module number you desire from the
table - i.e. CM300E3U-12H is a
600V (V
), 300 Ampere IGBT
CES
Module.
Current Rating V
Type Amperes Volts (x 50)
CM 300 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM300E3U-12H
HIGH POWER SWITCHING USE
INSULA TED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM300E3U-12H Units
Junction T emperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal – 3.5~4.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
600 Volts
±20 Volts
300 Amperes
600* Amperes
300 Amperes
600* Amperes
890 Watts
2500 Vrms
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 30mA, VCE = 10V 4.5 6 7.5 Volts
IC = 300A, VGE = 15V, Tj = 25°C – 2.4 3.0 Volts
IC = 300A, VGE = 15V, Tj = 125°C – 2.6 – Volts
Total Gate Charge Q
Emitter-Collector Voltage** V
Emitter-Collector Voltage V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
FM
VCC = 300V, IC = 300A, VGE = 15V – 600 – nC
IE = 300A, VGE = 0V – – 2.6 Volts
IF = 300A, Clamp Diode Part – – 2.6 Volts
rating.
j(max)
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time** t
Diode Reverse Recovery Charge** Q
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
ies
oes
res
d(on)
r
d(off)
f
rr
rr
rr
rr
VCE = 10V, VGE = 0V – – 14.4 nF
VCC = 300V, IC = 300A, – – 250 ns
V
= V
GE1
GE2
RG = 2.1Ω, Resistive – – 350 ns
Load Switching Operation – – 300 ns
IE = 300A, diE/dt = -600A/µs – – 160 ns
IE = 300A, diE/dt = -600A/µs – 0.72 – µC
IF = 300A, Clamp Diode Part – – 160 ns
diF/dt = -600A/µs – 0.72 – µC
= 15V, – – 600 ns
– – 26.4 nF
––4nF
Sep.1998