MITSUBISHI CM300DY-34A User Manual

CM300DY-34A

MITSUBISHI IGBT MODULES

CM300DY-34A

HIGH POWER SWITCHING USE

¡IC ...................................................................300A

¡V

CES ......................................................... 1700V

¡Insulated Type ¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

110

80

62±0.25

3-M6 NUTS

93±0.25

25 25

141414

G2G1 E2E1

30

C1E2C2E1

21.5

6 15 6

4-φ6.5 MOUNTING HOLES

(20.5)

11

SCREWING DEPTH

4

+1.0

29

–0.5

LABEL

18718718

TAB #110. t=0.5

8.521.2

C2E1

E2

CIRCUIT DIAGRAM

E2 G2G1 E1

C1

Jun. 2007

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)

Symbol Parameter

V

CES

VGES IC ICM IE ( IEM ( PC ( Tj Tstg Viso

Collector-emitter voltage Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature Storage temperature Isolation voltage

—

Torque strength

—

Weight

—

G-E Short C-E Short DC, T

C = 108°C

Pulse (Note 2) Operation (Note 2) Pulse (Note 2)

C = 25°C

*1

T

Main terminal to base plate, AC 1 min. Main terminal M6 Mounting holes M6 Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Symbol

ICES

V

GE(th)

IGES

VCE(sat)

Cies Coes Cres QG td(on) tr td(off) tf trr ( Qrr ( VEC( Rth(j-c)Q

th(j-c)R

R

th(c-f)

R RG

1 : Tc, Tf measured point is just under the chips.

*

2 : Typical value is measured by using Shin-Etsu Chemical Co.,Ltd “G-746”.

*

Note 1. I

Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance

Contact thermal resistance

External gate resistance

E, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temperature (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Parameter

VCE = VCES, VGE = 0V

I

C = 30mA, VCE = 10V

±V T

j = 25°C

T

j = 125°C

CE = 10V

V V

GE = 0V

CC = 1000V, IC = 300A, VGE = 15V

V

CC = 1000V, IC = 300A

V

GE1 = VGE2 = 15V

R

G = 1.6Ω, Inductive load switching operation

I

E = 300A

E = 300A, VGE = 0V

I IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied (1/2 module)

j) should not increase beyond 150°C.

GE = VGES, VCE = 0V

Test conditions

I

C = 300A, VGE = 15V

*1

j) does not exceed Tjmax rating.

MITSUBISHI IGBT MODULES

CM300DY-34A

HIGH POWER SWITCHING USE

1700

±20

(Note 2)

*1,*2

Min. Max.

—

5.5 8.5

— — — — — — — — — — — — — — — — —

1.6

300 600 300 600

2900 –40 ~ +150 –40 ~ +125

3500

3.5 ~ 4.5

3.5 ~ 4.5 580

Limits

Typ.

—

7.0 V

—

2.2

2.45 — — —

2000

— — — — — 30 — — —

0.02 —

2.0

2.8 — 74

8.4

1.6 —

600 200 850 350 450

—

3.0

0.043

0.072

— 16

V V

A

W

°C °C

V

N • m

g

Unit

mA

1

µA

V

nF

nC

ns

µC

V

°C/W

Ω

Jun. 2007

2

PERFORMANCE CURVES

MITSUBISHI IGBT MODULES

CM300DY-34A

HIGH POWER SWITCHING USE

OUTPUT CHARACTERISTICS

600

(A)

C

500

Tj = 25°C

V

GE

20V

=

15

13

12

400

11

300

200

100

COLLECTOR CURRENT I

0

046810

2

COLLECTOR-EMITTER VOLTAGE V

10

9

8

CE

(V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

5

V

GE

(V)

CE (sat)

= 15V

4

3

2

TRANSFER CHARACTERISTICS

600

V

CE

)

A

(

500

C

= 10V

400

300

200

100

COLLECTOR CURRENT I

0

048121620

Tj = 25°C T

j

= 125°C

GATE-EMITTER VOLTAGE VGE (V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(V)

CE (sat)

10

8

6

4

Tj = 25°C

IC = 600A

IC = 300A

)

COLLECTOR-EMITTER

1

SATURATION VOLTAGE V

0

0 200 400 600

COLLECTOR CURRENT IC (A)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7

5

(A)

E

3

2

10

7

5

3

EMITTER CURRENT I

2

1

10

Tj = 25°C T

j

= 125°C

0 1 2 3 4

EMITTER-COLLECTOR VOLTAGE V

Tj = 25°C T

j

= 125°C

EC

(V)

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

4 8 12 16 20

GATE-EMITTER VOLTAGE V

CAPACITANCE–V CHARACTERISTICS

2

10

7 5

(nF)

3

res

2

, C

1

10

oes

7

, C

5

ies

3 2

0

10

7 5

3 2

CAPACITANCE C

10

–1

10

V

GE

= 0V

2

357 2

10

0

COLLECTOR-EMITTER VOLTAGE V

IC = 120A

CE

1

10

357 2

GE

(V)

C

ies

C

oes

C

res

357

CE

10

2

(V)

Jun. 2007

3

MITSUBISHI IGBT MODULES

CM300DY-34A

HIGH POWER SWITCHING USE

SWITCHING CHARACTERISTICS

HALF-BRIDGE

SWITCHING TIME vs. COLLECTOR CURRENT

4

10

7

(ns)

5

f

, t

3 2

d(off)

, t

r

, t

d(on)

SWITCHING TIME t

10

t

d(off)

3

t

d(on)

7 5

3 2

2

7 5

3 2

1

10

t

f

Conditions:

CC

= 1000V

t

r

V V

GE

= ±15V

G

= 1.6Ω

R

j

= 125°C

T Inductive load

1

57

10

2

23 5723

COLLECTOR CURRENT IC (A)

SWITCHING LOSS vs.

COLLECTOR CURRENT

3

10

Conditions:

7 5

CC

= 1000V

V

3

GE

= ±15V

V

(mJ/pulse)

2

G

= 1.6Ω

R

rr

, E

off

, E

on

SWITCHING LOSS E

j

= 125°C

T

2

10

Inductive load

7 5

3 2

1

10

7 5

3 2

0

10

1

10

57

10

2

E

on

E

off

E

rr

23 5723

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

SWITCHING TIME vs. GATE RESISTANCE

4

10

7

(ns)

5

f

, t

3 2

d(off)

, t

3

r

10

, t

7 5

d(on)

3 2

2

10

7 5

3 2

SWITCHING TIME t

1

10

3

10

0

57

10

1

t

d(on)

t

d(off)

t

r

t

f

Conditions:

CC

= 1000V

V

GE

= ±15V

V

C

= 300A

I

j

= 125°C

T Inductive load

23 5723

10

2

GATE RESISTANCE RG (Ω)

SWITCHING LOSS vs.

GATE RESISTANCE

3

10

7 5

(mJ/pulse)

rr

3

, E

2

off

, E

on

2

10

7

5

Conditions:

3

CC

= 1000V

V

2

GE

= ±15V

V I

C

= 300A

1

10

3

SWITCHING LOSS E

0

10

57

E

on

E

off

E

rr

Tj = 125°C Inductive load

1

10

23 5723

10

2

COLLECTOR CURRENT I

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

3

10

(A)

rr

7

(ns)

rr

5

3

2

10

7

5

3

2

REVERSE RECOVERY TIME t

1

10

REVERSE RECOVERY CURRENT l

1

10

23 57

10

2

Conditions: V V R T Inductive load

23 57

EMITTER CURRENT I

C

t

rr

I

rr

CC

= 1000V

GE

= ±15V

G

= 1.6Ω

j

= 25°C

C

(A)

GATE RESISTANCE R

G

(Ω)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

0

10

7 5

(ratio)

3

10

2

th (j–c)

–1

10

7 5

3 2

–2

10

7

IGBT part:

5

NORMALIZED TRANSIENT

3

Per unit base = R

3

FWDi part:

2

Per unit base = R

THERMAL IMPEDANCE Z

–3

10

–5

–4

23 57

10

Single Pulse Tc= 25°C Tc measured point is just under the chips

th(j–c)

= 0.043°C/W

th(j–c)

= 0.072°C/W

–3

–2

23 57

10

23 57

10

–1

23 57

10

0

23 57

10

1

TIME (s)

Jun. 2007

4

20

16

MITSUBISHI IGBT MODULES

CM300DY-34A

HIGH POWER SWITCHING USE

GATE CHARGE

CHARACTERISTICS

IC = 300A

VCC = 800V

GATE-EMITTER VOLTAGE VGE (V)

12

VCC = 1000V

8

4

0

1000 2000 3000

GATE CHARGE QG (nC)

Jun. 2007

5

MITSUBISHI CM300DY-34A User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual