CM300DY-24NF
MITSUBISHI IGBT MODULES
CM300DY-24NF
HIGH POWER SWITCHING USE
¡IC ...................................................................300A
¡V
CES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Tc measured point (Base plate)
110
93
±0.25
80
62
3-M6 NUTS
±0.25
25 25
141414
G2G1 E2E1
C1E2C2E1
21.5
4-φ6.5 MOUNTING HOLES
Dimensions in mm
4
30
6 15 6
(20.5)
+1.0
29
–0.5
LABEL
18718718
TAB #110. t=0.5
8.521.2
C2E1
E2
CIRCUIT DIAGRAM
E2 G2G1 E1
C1
Mar.2003
MITSUBISHI IGBT MODULES
CM300DY-24NF
HIGH POWER SWITCHING USE
MAXIMUM RATINGS
Symbol Parameter
CES
V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
—
ELECTRICAL CHARACTERISTICS
Symbol
ICES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
R
th(c-f)
Rth(j-c’)Q
G
R
1 : Tc measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : Tc’ measured point is just under the chips.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
If you use this value, R
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
(Tj = 25°C)
G-E Short
C-E Short
C’ = 111°C
DC, T
Pulse (Note 2)
Pulse (Note 2)
C = 25°C
T
Main Terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
(Tj = 25°C)
Parameter
V
CE = VCES, VGE = 0V
C = 30mA, VCE = 10V
I
GE = VGES, VCE = 0V
V
T
j = 25°C
T
j = 125°C
CE = 10V
V
V
GE = 0V
CC = 600V, IC = 300A, VGE = 15V
V
CC = 600V, IC = 300A
V
V
GE1 = VGE2 = 15V
R
G = 1Ω, Inductive load switching operation
I
E = 300A
E = 300A, VGE = 0V
I
*1
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips
th(f-a) should be measured just under the chips.
j) should not increase beyond 150°C.
Conditions UnitRatings
*3
Test conditions
I
C = 300A, VGE = 15V
j) does not exceed Tjmax rating.
*2
(1/2 module)
1200
±20
300
600
300
600
1130
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
580
Limits
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
Ty p.
—
68
7V
—
1.8
2.0
—
—
—
2000
—
—
—
—
—
13
—
—
—
0.02
—
—
1
0.5
2.5
—
70
6
1.4
—
500
150
600
350
250
—
3.2
0.11
0.18
—
0.046
10
V
V
A
A
A
A
W
°C
°C
V
N • m
N • m
g
Unit
mA
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
*3
°C/W
Ω
Mar.2003
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
600
VGE =
20V
500
400
(TYPICAL)
12
15
13
Tj = 25°C
11
MITSUBISHI IGBT MODULES
CM300DY-24NF
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
(V)
CE (sat)
VOLTAGE CHARACTERISTICS
4
VGE = 15V
3
(TYPICAL)
300
200
100
COLLECTOR CURRENT IC (A)
0
046810
2
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
(V)
8
CE (sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
IC = 300A
CE
Tj = 25°C
IC = 600A
IC = 120A
10
2
1
COLLECTOR-EMITTER
9
(V)
SATURATION VOLTAGE V
0
0 200 600400 500300
100
COLLECTOR CURRENT IC (A)
Tj = 25°C
j = 125°C
T
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
EMITTER CURRENT IE (A)
2
1
2012 146 8 10 16 18
10
012 435
(TYPICAL)
Tj = 25°C
T
j = 125°C
GATE-EMITTER VOLTAGE V
CAPACITANCE–VCE
CHARACTERISTICS
2
10
7
5
(nF)
3
res
2
, C
1
10
oes
7
, C
5
ies
3
2
0
10
7
5
3
2
CAPACITANCE C
10
–1
10
VGE = 0V
–1
2
(TYPICAL)
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
10
1
GE
(V)
Cies
Coes
Cres
357
CE
10
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
tr
(TYPICAL)
2
10
57
tf
3
23 5723
10
4
10
7
Conditions:
5
CC = 600V, VGE = ±15V, RG = 1.0Ω
V
3
T
j = 125°C, Inductive load
2
td(off)
3
10
7
5
td(on)
3
2
2
10
7
5
SWITCHING TIME (ns)
3
2
1
2
10
10
1
COLLECTOR CURRENT IC (A)
Mar.2003
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
(A)
rr
7
(ns)
rr
5
3
2
2
10
7
5
3
2
REVERSE RECOVERY TIME t
1
10
REVERSE RECOVERY CURRENT l
1
10
(TYPICAL)
23 57
10
2
Conditions:
V
V
R
T
Inductive load
23 57
EMITTER CURRENT I
I
rr
t
rr
CC
= 600V
GE
= ±15V
G
= 1.0Ω
j
= 25°C
E
(A)
10
MITSUBISHI IGBT MODULES
CM300DY-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
10
10
10
10
1
–1
7
5
3
2
–2
7
5
3
2
–3
–3
–3
10
0
10
7
5
3
th (j–c)
2
–1
10
7
5
3
2
IGBT part:
–2
10
Per unit base =
7
R
5
NORMALIZED TRANSIENT
3
FWDi part:
3
Per unit base =
THERMAL IMPEDANCE Z
2
R
–3
10
–2
23 57 23 57 23 57 23 57
10
th(j– c)
= 0.11°C/W
th(j– c)
= 0.18°C/W
10
10
–1
–5
0
10
Single Pulse
C
= 25°C
T
–4
23 57 23 57
10
TMIE (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 300A
(V)
GE
16
VCC = 400V
12
8
4
GATE-EMITTER VOLTAGE V
0
0 500 30001000 2000 25001500
GATE CHARGE QG (nC)
VCC = 600V
Mar.2003
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