MITSUBISHI CM300DY-24NF User Manual

CM300DY-24NF

MITSUBISHI IGBT MODULES

CM300DY-24NF

HIGH POWER SWITCHING USE

¡IC ...................................................................300A

¡V

CES ......................................................... 1200V

¡Insulated Type
¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

Tc measured point (Base plate)

110

93

±0.25

80

62

3-M6 NUTS

±0.25

25 25

141414

G2G1 E2E1

C1E2C2E1

21.5

4-φ6.5 MOUNTING HOLES

Dimensions in mm

4

30

6 15 6

(20.5)

+1.0

29

–0.5

LABEL

18718718

TAB #110. t=0.5

8.521.2

C2E1

E2

CIRCUIT DIAGRAM

E2 G2G1 E1

C1

Mar.2003

MITSUBISHI IGBT MODULES

CM300DY-24NF

HIGH POWER SWITCHING USE

MAXIMUM RATINGS

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

ELECTRICAL CHARACTERISTICS

Symbol

ICES

V

GE(th)

IGES

VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

R

th(c-f)

Rth(j-c’)Q

G

R

1 : Tc measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : Tc’ measured point is just under the chips.

*

Note 1. I

Collector cutoff current

Gate-emitter threshold voltage

Gate leakage current

Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance

Contact thermal resistance

Thermal resistance

External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

(Tj = 25°C)

G-E Short
C-E Short

C’ = 111°C

DC, T
Pulse (Note 2)

Pulse (Note 2)

C = 25°C

T

Main Terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value

(Tj = 25°C)

Parameter

V

CE = VCES, VGE = 0V

C = 30mA, VCE = 10V

I

GE = VGES, VCE = 0V

V
T

j = 25°C

T

j = 125°C

CE = 10V

V
V

GE = 0V

CC = 600V, IC = 300A, VGE = 15V

V

CC = 600V, IC = 300A

V
V

GE1 = VGE2 = 15V

R

G = 1Ω, Inductive load switching operation

I

E = 300A

E = 300A, VGE = 0V

I

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Conditions UnitRatings

*3

Test conditions

I

C = 300A, VGE = 15V

j) does not exceed Tjmax rating.

*2

(1/2 module)

1200

±20
300
600
300
600

1130
–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
580

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

1.0

Ty p.

—

68

7V

—

1.8

2.0
—
—
—

2000

—
—
—
—
—
13
—
—
—

0.02
—
—

1

0.5

2.5
—
70

6

1.4
—

500
150
600
350
250

—

3.2

0.11

0.18

—

0.046
10

V
V
A
A
A
A

W

°C
°C

V
N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

*3

°C/W

Ω

Mar.2003