CM300DU-12F
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
¡IC...................................................................300A
CES ............................................................600V
¡V
¡Insulated Type
¡2-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Tc measured point
G2
E2
E1
G1
C1
4
2.8
14 14 14
CM
C2E1
25 2.521.525
3-M6 NUTS
4-φ6. 5 MOUNTING HOLES
18 7 18 7 18
93
108
±0.25
E2
Dimensions in mm
RTC
6156
±0.25
48
62
C2E1
E2
RTC
G2E2
C1
E1
G1
CIRCUIT DIAGRAM
0.5 0.5
0.5
0.5
+1.0
29
–0.5
LABEL
7.5
8.5
22
4
Aug. 1999
MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
Symbol Parameter
CES
V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
ELECTRICAL CHARACTERISTICS
Symbol
ICES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
Rth(j-c’)Q
G
R
Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Parameter
*1
j) should not increase beyond 150°C.
G-E Short
C-E Short
C = 25°C
T
Pulse (Note 2)
C = 25°C
T
Pulse (Note 2)
C = 25°C
T
Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value
(Tj = 25°C)
VCE = VCES, VGE = 0V
C = 30mA, VCE = 10V
I
V
GE = VCES, VCE = 0V
j = 25°C
T
j = 125°C
T
V
CE = 10V
GE = 0V
V
CC = 300V, IC = 300A, VGE = 15V
V
V
CC = 300V, IC = 300A
GE1 = VGE2 = 15V
V
G = 2.1Ω, Inductive load switching operation
R
E = 300A
I
I
E = 300A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compoundapplied
Tc measured point is just under the chips
Conditions UnitRatings
Test conditions
Min. Max.
—
57
—
I
C = 300A, VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
*2
(1/2 module)
—
—
2.1
j) does not exceed Tjmax rating.
600
±20
300
600
300
600
780
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
400
Limits
T yp.
—
1
V
V
A
A
W
°C
°C
V
N • m
N • m
g
Unit
mA
6V
—
1.6
1.6
—
—
—
1860
—
—
—
—
—
5.2
—
—
—
0.04
—
—
40
2.2
—
81
5.4
3.0
—
250
120
500
250
150
—
2.6
0.16
0.24
—
0.10
21
µA
V
nF
nC
ns
ns
µC
V
°C/W
✽3
Ω
Aug. 1999
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
600
Tj=25°C
(A)
500
C
400
(TYPICAL)
VGE=20V
9.5
15
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
3
V
11
10
CE (sat) (V)
9
GE
2.5
2
(TYPICAL)
= 15V
300
200
100
COLLECTOR CURRENT I
0
0
0.5 1.5 2.5 3.51234
8
7.5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
Tj = 25°C
4
CE (sat) (V)
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
8.5
IC = 600A
I
C
= 300A
C
= 120A
I
16 18 206 8 10 12 14
1.5
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7
Tj = 25°C
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4
(TYPICAL)
Tj = 25°C
j
= 125°C
T
6000 200 400
GATE-EMITTER VOLTAGE V
CAPACITANCE–V
CE
CHARACTERISTICS
(TYPICAL)
2
10
7
5
3
2
1
10
7
5
3
2
0
CAPACITANCE Cies, Coes, Cres (nF)
10
10
7
5
3
2
–1
–1
10
V
GE
= 0V
2
357 2
10
0
C
res
1
10
357 2
COLLECTOR-EMITTER VOLTAGE VCE (V)
GE (V)
C
ies
C
357
oes
10
EMITTER-COLLECTOR VOLTAGE VEC (V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
SWITCHING TIMES (ns)
3
2
0
2
10
10
0
23 57
10
t
d(off)
t
d(on)
t
f
t
r
1
23 57
Conditions:
VCC = 300V
GE
= ±15V
V
G
= 2.1Ω
R
j
= 125°C
T
2
10
23 57
10
3
COLLECTOR CURRENT IC (A)
Aug. 1999
MITSUBISHI IGBT MODULES
CM300DU-12F
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
3
10
(A)
rr
7
(ns)
rr
5
3
2
2
10
7
5
3
2
REVERSE RECOVERY TIME t
1
10
REVERSE RECOVERY CURRENT l
10
1
23 57
10
2
23 57
EMITTER CURRENT I
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
(V)
GE
18
16
14
IC = 300A
VCC = 200V
12
10
8
6
4
2
GATE-EMITTER VOLTAGE V
0
0 500 1000 1500 2000 2500
t
rr
I
rr
Conditions:
CC = 300V
V
V
GE = ±15V
R
G = 2.1Ω
T
j = 25°C
E
(A)
VCC = 300V
10
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
10
10
10
10
1
3
2
–1
7
5
3
2
–2
7
5
3
2
–3
–3
–3
10
1
10
7
IGBT part:
5
Per unit base = R
3
FWDi part:
(°C/W)
2
Per unit base = R
0
10
th (j–c)
7
5
3
2
–1
10
7
5
3
2
–2
10
7
NORMALIZED TRANSIENT
5
Single Pulse
3
2
10
T
–3
3
THERMAL IMPEDANCE Z
–2
23 57 23 57 23 57 23 57
10
C
= 25°C
–1
10
th(j–c)
th(j–c)
–5
10
0
10
= 0.16°C/W
= 0.24°C/W
–4
23 57 23 57
10
TMIE (s)
GATE CHARGE QG (nC)
Aug. 1999
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