CM25MD-24H
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
¡IC..................................................................... 25A
¡V
CES ......................................................... 1200V
¡Insulated Type
¡CIB Module
3φ Inverter+3φ Converter+Brake
¡UL Recognized
Yellow Card No. E80276 (N)
File No. E80271
APPLICATION
AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
P
P1
2 - φ4.5
MOUNTING
HOLES
8 15 15 17.2
RST B UVW
13 12.5 12.5 12.5
5
2.54 2.54 2.54
10.16 10.16 10.16
EU EV EW GU
GU GV GW GB
NP1P
15
±0.25
105
115
2.54
2.54
GEGEG E
12.515
2.54
2.54
R
S
T
GV
GW
E
EGGGGB
±0.25
60
2 - R5.5
29
58
±0.25
29
B
GB
N
9
GU
EU
GU
UVW
4
2
t = 0.6 t = 0.6
GV
EV
GV GW
CIRCUIT DIAGRAM
GW
EW
0.6
E
6.3
12
LABEL
45°
MAIN CIRCUIT
TERMINAL
CONTROL CIRCUIT
TERMINAL
Feb.1999
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
INVERTER PART
Symbol Parameter Condition UnitRating
CES
V
VGES
IC
ICM
IE
IEM
PC
BRAKE PART
Symbol
CES
V
VGES
IC
ICM
PC
VRRM
IFM
Collector-emitter voltage
Gate-emitter voltage
Collector Current
(Note. 1)
Emitter Current
(Note. 1)
Maximum collector dissipation
(Note. 3)
Parameter Condition UnitRating
Collector-emitter voltage
Gate-emitter voltage
Collector Current
(Note. 3)
Maximum Collector dissipation
Repetitive peak reverse voltage
(Note. 3)
Forward current
G – E Short
C – E Short
C = 25°C
T
PULSE
TC = 25°C
PULSE
Tf = 25°C
G – E Short
C – E Short
C = 25°C
T
PULSE
Tf = 25°C
Clamp diode part
Clamp diode part
(Note. 2)
(Note. 2)
(Note. 2)
INSULATED TYPE
1200
±20
25
50
25
50
104
1200
±20
25
50
104
1200
25
V
V
A
A
A
A
W
V
V
A
A
W
V
A
CONVERTER PART
Symbol Parameter Condition UnitRating
RRM
V
Ea
IO
IFSM
I2t
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I2t for fusing
3φ rectifying circuit
1 cycle at 60Hz, peak value Non-repetitive
Value for one cycle of surge current
COMMON RATING
Symbol Parameter Condition UnitRating
j
T
Tstg
Viso
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
AC 1 min.
Mounting M4 screw
Typical value
–40 ~ +150
–40 ~ +125
0.98 ~1.47
1600
440
25
250
260
2500
100
V
V
A
A
2
s
A
°C
°C
V
.
m
N
g
Feb.1999
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
INVERTER PART
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td (on)
tr
td (off)
tf
V
EC (Note. 1)
trr
(Note. 1)
Qrr
(Note. 1)
R
th(j-f)Q (Note. 5)
R
th(j-f)R (Note. 5)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Emitter-collector voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Parameter Test conditions
V
CE = VCES, VGE = 0V
C = 2.5mA, VCE = 10V
V
GE = VGES, VCE = 0V
j = 25°C
T
T
j = 150°C
VCE = 10V
V
GE = 0V
CC = 600V, IC = 25A, VGE = 15V
V
V
CC = 600V, IC = 25A
V
GE1 = VGE2 = 15V
R
G = 13Ω
Resistive load
I
E = 25A, VGE = 0V
E = 25A, VGE = 0V
I
di
e / dt = – 50A / µs
IGBT part, Per 1/6 module
FWDi part, Per 1/6 module
I
C = 25A, VGE = 15V
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Limits
Min. Typ. Max.
(Note. 4)
—
—
64.5 7.5I
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.7
2.45
—
—
—
125
—
—
—
—
—
—
0.22
—
—
1
0.5
3.4
—
5.0
3.8
1.0
—
100
200
150
350
3.5
250
—
1.2
1.9
Unit
mA
V
µ A
V
nF
nF
nF
nC
ns
ns
ns
ns
V
ns
µ C
°C/W
°C/W
BRAKE PART
Symbol Parameter Condition
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
QG
V
FM
R
th(j-f)Q (Note. 5)
R
th(j-f)R (Note. 5)
Collector cutoff current
Gate-emitter
threshold voltage
Gate-emitter cutoff current
Collector-to-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Forward voltage drop
Thermal resistance
CE = VCES, VGE = 0V
V
I
C = 2.5mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 150°C
C = 25A, VGE = 15V
I
VCE = 10V
GE = 0V
V
CC = 600V, IC = 25A, VGE = 15V
V
F = 25A, Clamp diode part
I
IGBT part
Clamp diode part
(Note. 4)
CONVERTER PART
Symbol
I
RRM
VFM
Rth(j-f) (Note. 5)
Note 1. IE, VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
Repetitive reverse current
Forward voltage drop
Thermal resistance
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. Thermal resistance is specified under following conditions.
•
The conductive greese applied, between module and fin.
•
Al plate is used as fin.
Parameter Condition
R = VRRM, Tj = 150°C
V
I
F = 25A
Per 1/6 module
j) should not increase beyond 150°C.
j) does not exceed Tjmax rating.
Limits
Min. Typ. Max.
—
4.5 7.5
—
—
—
—
—
—
—
—
—
—
—
—
2.7
2.45
—
—
—
125
—
—
—
6
0.5
3.4
—
5.0
3.8
1.0
—
1.5
1.2
1.7
Limits
Min. Typ. Max.
—
—
—
—
—
—
1.5
1.7
Unit
mA
1
V
µ A
V
nF
nF
nF
nC
V
°C/W
°C/W
Unit
8
mA
V
°C/W
Feb.1999
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
50
VGE = 20
40
Tj = 25°C
30
(V)
(TYPICAL)
15
12
11
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
50
VCE = 10V
40
30
(TYPICAL)
20
10
COLLECTOR CURRENT IC (A)
0
234 6789
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
T
CE(sat) (V)
4
j = 125°C
3
2
COLLECTOR-EMITTER
1
SATURATION VOLTAGE V
0
10 20 30 40
10
897
20
10
COLLECTOR CURRENT IC (A)
10510
0
4 6 8 12141618
Tj = 25°C
T
j = 125°C
201020
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
9
8
CE(sat) (V)
7
6
5
4
IC = 50A
IC = 25A
3
COLLECTOR-EMITTER
2
1
SATURATION VOLTAGE V
500
0
4 6 8 12141618
IC = 10A
201020
COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
2
10
Tj = 25°C
7
5
3
2
1
10
7
5
3
EMITTER CURRENT IE (A)
2
0
10
1.0 1.5 2.0
(TYPICAL)
2.5 3.0 3.5
EMITTER-COLLECTOR VOLTAGE VEC (V)
CAPACITANCE VS. V
(TYPICAL)
2
10
VGE = 0V
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
CAPACITANCE Cies, Coes, Cres (nF)
–1
10
35710023 5710123 235710
Cies
Coes
Cres
COLLECTOR-EMITTER VOLTAGE VCE (V)
CE
2
Feb.1999
MITSUBISHI IGBT MODULES
CM25MD-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING CHARACTERISTICS
HALF-BRIDGE
3
10
7
5
3
2
2
10
7
5
3
SWITCHING TIMES (ns)
2
1
10
0
10
(TYPICAL)
td(on)
tr
23 5710
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
–3
10
1
10
7
Single Pulse
5
T
3
2
Rth(j – f) = 1.2°C/W
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
7
NORMALIZED TRANSIENT
5
THERMAL IMPEDANCE Zth (j – f)
3
2
–3
10
–2
23 57 23 57 23 57 23 57
10
f = 25°C
tf
td(off)
VCC = 600V
VGE = ±15V
G = 13Ω
R
Tj = 125°C
1
23 57
–1
10
10
10
–5
23 57 23 57
10
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10
3
10
–di/dt = 50A / µs
7
j = 25°C
T
5
3
2
2
10
7
5
3
2
REVERSE RECOVERY TIME trr (ns)
1
10
2
10
0
23 5710
1
23 57
Irr
trr
10
10
7
5
3
2
10
7
5
3
2
10
2
1
0
–1
REVERSE RECOVERY CURRENT lrr (A)
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10
10
10
10
10
1
3
2
–1
7
5
3
2
–2
7
5
3
2
–3
–3
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – f)
–3
10
1
10
7
Single Pulse
5
T
3
2
Rth(j – f) = 1.9°C/W
0
10
7
5
3
2
–1
10
7
5
3
2
–2
10
7
5
3
2
–3
10
–2
23 57 23 57 23 57 23 57
10
f = 25°C
10
10
–1
–5
0
10
–4
23 57 23 57
10
10
10
3
2
10
7
5
3
2
10
7
5
3
2
10
1
–1
–2
–3
–3
0
–4
GATE-EMITTER VOLTAGE VGE (V)
20
18
16
14
12
10
8
6
4
2
0
TIME (s) TIME (s)
GE – GATE CHARGE
V
(TYPICAL)
IC = 25A
VCC = 400V
50 100
GATE CHARGE QG (nC)
VCC = 600V
2001500
Feb.1999
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