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CM2400HCB-34N
User Manual
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MITSUBISHI CM2400HCB-34N User Manual

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Page 1
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM2400HCB-34N
● IC ............................................................... 2400 A
● V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULATED TYPE
TM
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
±0.5
171
3 - M4 NUTS
screwing depth min. 7.7
CM
57±0.1
C
79.4
±0.3
C
E
G
E
61.5
±0.1
57
±0.1
20.25
41.25
±0.3 ±0.3
57
CC
EE
±0.2
±0.3
61.5
±0.2
13
±0.1
6 - M8 NUTS
+0.1
–0.2
20
±0.1
±0.5
±0.2
40
124
140
±0.1
8 - φ7 MOUNTING HOLES
screwing depth min. 16.5
±0.2
5.2
+1
0
±0.15
5
+1
0
38
28
C
C
C
C
G E
E
CIRCUIT DIAGRAM
±0.3
40
LABEL
E
±0.2
15
E
±0.5
29.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
1
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MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions Ratings Unit
V
CES
V
GES
I
C
I
CM
I
E
IEM P
c
V
iso
T
j
T
op
T
stg
t
psc
ELECTRICAL CHARACTERISTICS
Symbol Item Conditions
I
CES
V
GE(th)
I
GES
C
ies
C
oes
C
res
Q
g
V
CE(sat)
t
d(on)
t
r
E
on(10%)
t
d(off)
t
f
E
off(10%)
V
EC
t
rr
Q
rr
E
rec(10%)
Collector-emitter voltage Gate-emitter voltage
Collector current
Emitter current (Note 2)
Maximum power dissipation (Note 3) Isolation voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width
Collector cutoff current
Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Tu r n-on delay time Tu r n-on rise time Tu r n-on switching energy
(Note 5) Tu r n-off delay time Tu r n-off fall time Tu r n-off switching energy
(Note 5) Emitter-collector voltage
(Note 2) Reverse recovery time
(Note 2) Reverse recovery charge
(Note 2) Reverse recovery energy
(Note 2), (Note 5)
VGE = 0V, Tj = 25°C V
CE
= 0V, Tj = 25°C
DC, T
c
= 80°C
Pulse (Note 1) DC Pulse (Note 1) T
c
= 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1 min.
V
CC
= 1000V, VCE ≤ V
V
CE
= V
CES
, VGE = 0V
CE
= 10 V, IC = 240 mA, Tj = 25°C
V V
GE
= V
GES
, VCE = 0V, Tj = 25°C
V
CE
= 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C
V
CC
= 900 V, IC = 2400 A, VGE = ±15 V, Tj = 25°C
I
C
= 2400 A (Note 4)
V
GE
= 15 V
V
CC
= 900 V, IC = 2400 A, VGE = ±15 V
R
G(on)
= 0.8 Ω, Tj = 125°C, Ls = 80 nH
CES
, VGE = 15V, Tj = 125°C
T
j
= 25°C
T
j
= 125°C
Tj = 25°C T
j
= 125°C
Inductive load
CC
= 900 V, IC = 2400 A, VGE = ±15 V
V R
G(off)
= 1.1 Ω, Tj = 125°C, Ls = 80 nH
Inductive load
E
= 2400 A (Note 4)
I V
GE
= 0 V
CC
= 900 V, IE = 2400 A, VGE = ±15 V
V R
G(on)
= 0.8 Ω, Tj = 125°C, Ls = 80 nH
Tj = 25°C T
j
= 125°C
Inductive load
— —
5.5 — — — — — — — — —
—
— —
—
— —
—
—
—
INSULATED TYPE
1700
± 20
2400 4800 2400 4800
15600
4000 –40 ~ +150 –40 ~ +125 –40 ~ +125
10
Limits
Ty p
—
7.0
6.5 —
396
21.6
6.3
27.4
2.10
2.35 — —
0.65
— —
0.70
2.20
1.85
—
750
0.50
MaxMin
9
18
7.5
0.5 — — — —
2.70 —
1.50
0.60
—
3.00
0.60
—
3.00 —
1.50
—
—
V V A A A A
W
V
°C °C °C µs
Unit
mA
V
µA nF nF nF µC
V
µs µs
J/P
µs µs
J/P
V
µs
µC
J/P
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
2
Page 3
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol Item Conditions
R
th(j-c)Q
R
th(j-c)R
R
th(c-f)
MECHANICAL CHARACTERISTICS
Symbol Item Conditions
M
t
M
s
M
t
m CTI d
a
d
s
L
P CE
R
CC’+EE’
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed T
Thermal resistance Thermal resistance Contact thermal resistance
Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ
grease
= 1W/m·K, D
(c-f)
= 100 µm
M8: Main terminals screw
Mounting torque
M6: Mounting screw
M4: Auxiliary terminals screw Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
5. E
on(10%)
/ E
off(10%)
/ E
rec(10%)
are the integral of
T
c
= 25°C
jmax
rating (150°C).
0.1VCE x 0.1IC x dt.
opmax
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
19.5
32.0
rating (125°C).
— — —
7.0
3.0
1.0 —
600
— —
Ty p
— —
6.0
Limits
Ty p
— — —
1.5 — — — 10
0.18
MaxMin
8.0
12.0 —
MaxMin
13.0
6.0
2.0 — — — — — —
Unit
K/kW K/kW K/kW
Unit
N·m N·m N·m
kg
— mm mm
nH mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
3
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4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
5000
Tj = 125°C
V
GE
4000
) A
(
3000
2000
COLLECTOR CURRENT
1000
0
5000
= 20V
V
GE
= 15V
V
GE
= 12V
01 3245
COLLECTOR-EMITTER VOLTAGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
V
GE
= 15V
(
TYPICAL
(
TYPICAL
)
V
GE
V
)
GE
= 10V
= 8V
)
TRANSFER CHARACTERISTICS
5000
V
CE
= 20V
4000
)
A
(
3000
2000
COLLECTOR CURRENT
1000
Tj = 25°C T
j
6
0
02 6481012
5000
= 125°C
GATE-EMITTER VOLTAGE (V
FORWARD CHARACTERISTICS
(
TYPICAL
FREE-WHEEL DIODE
(
TYPICAL
)
)
)
4000
) A
(
3000
2000
COLLECTOR CURRENT
1000
Tj = 25°C
j
= 125°C
0
01234
COLLECTOR-EMITTER SATURATION VOLTAGE (V
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
T
4000
)
A
(
3000
2000
EMITTER CURRENT
1000
Tj = 25°C T
j
0
01234
)
4
EMITTER-COLLECTOR VOLTAGE (V
= 125°C
)
Sep. 2009
Page 5
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
4
10
7 5
3 2
3
10
7
)
5
nF
(
3 2
2
10
7 5
3
CAPACITANCE
2
1
10
7 5
3
V
GE
= 0V, Tj = 25°C
2
f = 100kHz
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
HALF-BRIDGE SWITCHING ENERGY
2.5 V
CC
= 900V, V
R
G (on)
Tj = 125°C, Inductive load
2.0
) J/P
(
1.5
(
TYPICAL
0
23 57 23 57
CHARACTERISTICS
(
TYPICAL
GE
= 0.8Ω, R
= ±15V
G (off)
= 1.1Ω
)
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
V
CE
= 900V, IC = 2400A
Tj = 25°C
15
)
V
C
ies
(
10
5
0
C
oes
-5
GATE-EMITTER VOLTAGE
-10
C
10
res
1
10
2
)
-15 01020304010
GATE CHARGE (µC
)
HALF-BRIDGE SWITCHING ENERGY
)
CHARACTERISTICS
(
TYPICAL
)
6
V
CC
= 900V, IC = 2400A
V
GE
E
on
)
J/P
(
E
off
= ±15V, Tj = 125°C
Inductive load
5
4
E
on
1.0
E
rec
SWITCHING ENERGIES
0.5
0
0 1000 2000 3000 4000 5000
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
)
3
2
SWITCHING ENERGIES
1
0
024681012
5
GATE RESISTANCE (Ω
E
off
E
rec
)
Sep. 2009
Page 6
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE SWITCHING TIME
1
10
V
CC
= 900V, V
7
R
G (on)
5
3
2
= 0.8Ω, R
T
j
= 125°C, Inductive load
t
d(off)
) µs
0
10
(
10
SWITCHING TIMES
10
t
d(on)
7 5
3
2
-1
7 5
3
2
-2
10
t
f
t
r
2
COLLECTOR CURRENT (A
CHARACTERISTICS
(
TYPICAL
GE
= ±15V
G (off)
= 1.1Ω
3
10
)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARACTERISTICS
(
2
10
V
CC
= 900V, V
7
R
G (on)
5
3
)
2
µs
(
1
10
7 5
3
2
0
10
7 5
REVERSE RECOVERY TIME
3
2
-1
10
4
423 57423 57
10
10
= 0.8Ω, Tj = 125°C
Inductive load
2
)
TYPICAL
GE
= ±15V
EMITTER CURRENT (A
10
)
l
rr
t
rr
3
423 57423 57
10
4
10
7 5
)
3
A
(
2
3
10
7 5
3
2
2
10
7 5
REVERSE RECOVERY CURRENT
3
2
1
10
4
)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.2 R
th(j–c)Q
= 8.0K/kW
R
th(j–c)R
= 12.0K/kW
1.0
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
TIME (s
10
-1
23 57
)
10
0
23 57
10
1
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Sep. 2009
6
Page 7
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
) A
(
REVERSE BIAS SAFE OPERATING AREA
6000
V
CC
≤ 1200V, V
T
j
= 125°C, R
5000
4000
GE
G (off)
(
RBSOA
= ±15V ≥ 1.1Ω
)
40000
CC
≤ 1000V, V
V R
G (on)
≥ 0.8Ω, R
j
= 125°C, tpsc ≤ 10µs
T
)
30000
A
(
MITSUBISHI HVIGBT MODULES
CM2400HCB-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
SHORT CIRCUIT
SAFE OPERATING AREA
(SCSOA)
GE
= ±15V
G (off)
≥ 1.1Ω
3000
2000
COLLECTOR CURRENT
1000
0
0 500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE (V
FREE-WHEEL DIODE REVERSE RECOVERY
SAFE OPERATING AREA
(
)
RRSOA
3000
V
CC
≤ 1200V, di/dt ≤ 9000A/µs
Tj = 125°C
)
2500
A
(
2000
20000
COLLECTOR CURRENT
10000
0
0 500 1000 1500 2000
)
COLLECTOR-EMITTER VOLTAGE (V
)
1500
1000
500
REVERSE RECOVERY CURRENT
0
0
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE (V
)
Sep. 2009
7
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