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MITSUBISHI HVIGBT MODULES
CM2400HC-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM2400HC-34N
● IC ................................................................ 2400A
● V
CES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Trench Gate IGBT : CSTBT™
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
±0.5
3 - M4 NUTS
screwing depth
min. 7.7
130
57
±0.25
42
31
C
10.65
±0.2
48.8
±0.2
18
±0.2
61.5
GE
57
10.35
±0.3
±0.25
±0.2
4 - M8 NUTS
±0.1
20
±0.5
±0.25
±0.2
140
124
40
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
5.2
±0.2
4(C)
C
G
E
3(E)
CIRCUIT DIAGRAM
40
±0.2
15
2(C)
1(E)
±0.2
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
+1
–0
+1
±0.2
5
–0
38
28
LABEL
±0.5
29.5
Jul. 2005
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MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Irr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery current
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not exceed Tjmax rating (150°C).
V
GE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 75°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 1200V, VCES ≤ 1700V, VGE = 15V
T
j = 125°C
VCE = VCES, VGE = 0V, Tj = 25°C
I
C = 240mA, VCE = 10V, Tj = 25°C
V
GE = VGES, VCE = 0V, Tj = 25°C
I
C = 2400A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 2400A, VGE = 15V, Tj = 125°C (Note 4)
CE = 10V, f = 100kHz
V
V
GE = 0V, Tj = 25°C
CC = 850V, IC = 2400A, VGE = 15V, Tj = 25°C
V
I
E = 2400A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 2400A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 850V, IC = 2400A, VGE = ±15V
R
G(on) = 0.7Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 850V, IC = 2400A, VGE = ±15V
R
G(off) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
CC = 850V, IC = 2400A, VGE = ±15V
R
G(on) = 0.7Ω, Tj = 125°C, Ls = 100nH
Inductive load
13100
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
6.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
2400
4800
2400
4800
4000
10
8.0
0.5
2.80
—
—
—
—
—
3.30
—
—
—
—
—
—
—
—
—
—
—
8
mJ/pulse
mJ/pulse
mJ/pulse
—
7.0
—
2.15
2.40
352
19.2
5.6
13.6
2.60
2.30
1.00
0.40
640
1.20
0.30
840
1.00
900
620
380
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
A
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 3
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
d
s
L
C-E(int)
R
C-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Internal lead resistance
Item Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
C = 25°C
T
grease = 1W/m·K
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
Min Typ Max
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
—
8.0
Limits
—
—
—
0.8
—
—
—
16
0.14
21.0
20.0
9.5
—
6.0
3.0
—
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
mΩ
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 4
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
4800
T
j
= 125°C
4000
)
A
(
V
3200
2400
1600
COLLECTOR CURRENT
800
0
06
COLLECTOR-EMITTER VOLTAGE (V
GE
= 20V
(
TYPICAL
)
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
34215
)
4800
4000
)
A
(
3200
2400
1600
COLLECTOR CURRENT
800
TRANSFER CHARACTERISTICS
CE
= 20V
V
T
0
T
012
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
)
V
V
GE
(
= 15V
(
TYPICAL
)
5
FORWARD CHARACTERISTICS
j
= 25°C
j
= 125°C
(
TYPICAL
)
684210
GATE-EMITTER VOLTAGE (V
FREE-WHEEL DIODE
(
TYPICAL
)
)
4
3
2
1
T
j
= 25°C
j
= 125°C
COLLECTOR-EMITTER SATURATION VOLTAGE
0
0 4800
2400 32001600800 4000
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
T
)
)
V
(
4
3
2
1
EMITTER-COLLECTOR VOLTAGE
0
0 4800
2400 32001600800 4000
EMITTER CURRENT (A
T
j
= 25°C
T
j
= 125°C
)
Jul. 2005
Page 5
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
3
10
7
5
3
2
)
2
10
nF
(
7
5
3
2
1
10
CAPACITANCE
7
5
3
2
VGE = 0V, Tj = 25°C
f = 100kHz
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
SWITCHING ENERGY CHARACTERISTICS
2400
VCC = 850V, VGE = ±15V
G(on) = 0.7Ω, RG(off) = 1.6Ω
R
Tj = 125°C, Inductive load
2000
)
10
0
(
TYPICAL
)
23 57 23 57
10
1
HALF-BRIDGE
(
TYPICAL
)
Eoff
Cies
Coes
Cres
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
VCC = 850V, IC = 2400A
j = 25°C
T
16
)
V
(
12
8
GATE-EMITTER VOLTAGE
4
2
10
)
0
812401620
GATE CHARGE
(µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
3000
VCC = 850V, IC = 2400A
Eon
VGE = ±15V
Tj = 125°C, Inductive load
2500
)
J/pulse
1600
(m
Eon
1200
800
SWITCHING ENERGIES
400
0
2400 320016008000 4000 4800
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Erec
)
J/pulse
2000
(m
1500
1000
SWITCHING ENERGIES
500
0
24068
GATE RESISTANCE
Eoff
Erec
(Ω)
Jul. 2005
Page 6
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM2400HC-34N
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
1
10
VCC = 850V, V
7
R
G(on)
5
3
2
= 0.7Ω, R
j
= 125°C, Inductive load
T
)
µs
0
10
(
7
5
3
2
-1
10
SWITCHING TIMES
7
5
3
2
-2
10
2
10
23 57
COLLECTOR CURRENT (A
HALF-BRIDGE
(
TYPICAL
GE
= ±15V
G(off) =
t
d(off)
t
d(on)
10
)
1.6Ω
3
t
r
t
f
23 57
)
10
REVERSE RECOVERY CHARACTERISTICS
(
TYPICAL
)
1000
FREE-WHEEL DIODE
VCC = 850V, V
R
G(on)
T
j
)
µC
(
= 125°C, Inductive load
800
= 0.7Ω
GE
= ±15V
Q
rr
600
400
200
REVERSE RECOVERY CHARGE
4
0
EMITTER CURRENT (A
2400 320016008000 4000 4800
)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, T
th(j–c)Q
R
R
th(j–c)R
1.0
C
= 9.5K/kW
= 21K/kW
= 25°C
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
10
-2
23 57
TIME (s
10
-1
23 57
)
10
0
23 57
10
REVERSE BIAS SAFE OPERATING AREA
(
RBSOA
)
6000
V
CC
≤ 1200V, V
j
= 125°C, R
T
GE
G(off)
= +/-15V
≥ 1.6Ω
5000
)
A
(
4000
3000
2000
COLLECTOR CURRENT
1000
Module
Chip
1
0
500 10000 1500 2000
COLLECTOR-EMITTER VOLTAGE (V
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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