Mitsubishi Electric Corporation Semiconductor Group CM20TF-24H Datasheet
MITSUBISHI IGBT MODULES
CM20TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
K H H N
GUPEUP
P
D
J
N
TAB #250, t = 0.8 TAB #110, t = 0.5
G
M
P
GuP
EuP
U
GuN
EuN
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.21 107.0
B 3.66±0.01 93.0±0.2
C 3.19 81.0
D 1.77 45.0
E 1.18 30.0
F 1.11 28.2
G 1.05 26.6
H 0.85 21.5
J 0.83 21.0
U
G
UNEU
GvP
GvN
A
C
N
GVPEVP
G
EvP
V
EvN
GWPEWP
V
VNEV
B
W
G
N
WNEW
N
PRQRQR
GwP
EwP
W
GwN
EwN
Dimensions Inches Millimeters
K 0.79 20.0
L 0.71 18.0
M 0.69 17.5
N 0.69 17.5
P 0.63 16.0
Q 0.55 14.0
R 0.30 7.5
S 0.22 Dia. Dia. 5.5
L
R
S - DIA.
(2 TYP.)
E
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of
F
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected superfast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-24H
is a 1200V (V
), 20 Ampere
CES
Six-IGBT Module.
Type Current Rating V
Amperes (20) Volts (x 50)
CM 20 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM20TF-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM20TF-24H Units
Junction T emperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 260 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
j(max)
rating.
–40 to 150 °C
–40 to 125 °C
1200 Volts
±20 Volts
20 Amperes
40* Amperes
20 Amperes
40* Amperes
250 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 2mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 20A, VGE = 15V – 2.5 3.4** Volts
IC = 20A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 600V, IC = 20A, VGE = 15V – 100 – nC
IE = 20A, VGE = 0V – – 3.5 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
d(on)
Load Rise Time t
Switching Turn-off Delay Time t
d(off)
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
r
f
rr
rr
VGE = 0V, VCE = 10V – – 1.4 nF
VCC = 600V, IC = 20A, – – 200 ns
V
= V
GE1
= 15V, RG = 16Ω – – 150 ns
GE2
IE = 20A, diE/dt = –40A/µs – – 250 ns
IE = 20A, diE/dt = –40A/µs – 0.15 – µC
– – 4 nF
– – 0.8 nF
– – 100 ns
– – 350 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.058 °C/W
Per IGBT – – 0.63 °C/W
Per FWDi – – 1.40 °C/W
Sep.1998
Loading...