Mitsubishi Electric Corporation Semiconductor Group CM20TF-12H Datasheet

MITSUBISHI IGBT MODULES

CM20TF-12H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

A
B

P

D

H

N

TAB #110, t = 0.5

G

N

P

GuP

(EuP)

U

GuN

(EuN) (EvN) (EwN)

N

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 3.54 90.0
B 2.99±0.01 76.0±0.2
C 2.52 64.0
D 1.54 39.0
E 0.98 25.0
F 0.90 23.0
G 0.87 22.0
H 0.75 19.0

J 0.71 18.0

GvP

(EvP)

GvN

LKK

GuP

SuP GvP SvP GwP SwP

GuN GvN GwNSuN SvN SwN

Q

S

C

VW

Dimensions Inches Millimeters

M

WVU

Q

P

SS

TAB #250, t = 0.8

GwP

(EwP)

GwN

K 0.67 17.0
L 0.63 16.0
M 0.59 15.0
N 0.56 14.1
P 0.51 13.0
Q 0.43 11.0
R 0.26 6.5
S 0.24 6.0
T 0.22 Dia. Dia. 5.5

T - DIA.
(2 TYP.)

E

J

F

R

Description:

Mitsubishi IGBT Modules are de­signed for use in switching appli­cations. Each module consists of
six IGBTs in a three phase bridge
configuration, with each transistor
having a reverse-connected super­fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys­tem assembly and thermal man­agement.

Features:

u Low Drive Power
u Low V

CE(sat)

u Discrete Super-Fast Recovery

Free-Wheel Diode

u High Frequency Operation
u Isolated Baseplate for Easy

Heat Sinking

Applications:

u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies

Ordering Information:

Example: Select the complete part
module number you desire from
the table below -i.e. CM20TF-12H
is a 600V (V

), 20 Ampere Six-

CES

IGBT Module.

Type Current Rating V

Amperes Volts (x 50)

CM 20 12

CES

Sep.1998

MITSUBISHI IGBT MODULES

CM20TF-12H

MEDIUM POWER SWITCHING USE

INSULATED TYPE

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified

Ratings Symbol CM20TF-12H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P

j

stg
CES
GES

C
CM

E

EM

c

Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 150 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V

*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).

j(max)

iso

rating.

–40 to +150 °C
–40 to +125 °C

600 Volts
±20 Volts

20 Amperes

40* Amperes

20 Amperes
40* Amperes
125 Watts

2500 Vrms

Static Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V

CES
GES

GE(th)

CE(sat)

VCE = V
VGE = V

, VGE = 0V – – 1.0 mA

CES

, VCE = 0V – – 0.5 µA

GES

IC = 2mA, VCE = 10V 4.5 6.0 7.5 Volts

IC = 20A, VGE = 15V – 2.1 2.8** Volts

IC = 20A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V

** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

G

EC

VCC = 300V, IC = 20A, VGE = 15V – 60 – nC

IE = 20A, VGE = 0V – – 2.8 Volts

Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q

ies
oes
res

d(on)

r

d(off)

f

rr

rr

VGE = 0V, VCE = 10V – – 0.7 nF

VCC = 300V, IC = 20A, – – 300 ns

V

= V

GE1

= 15V, RG = 31Ω – – 200 ns

GE2

IE = 20A, diE/dt = –40A/µs – – 110 ns
IE = 20A, diE/dt = –40A/µs – 0.05 – µC

– – 2.0 nF

– – 0.4 nF
– – 120 ns

– – 300 ns

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R

th(j-c)
th(j-c)
th(c-f)

Per Module, Thermal Grease Applied – – 0.092 °C/W

Per IGBT – – 1.00 °C/W
Per FWDi – – 3.50 °C/W

Sep.1998