Mitsubishi Electric Corporation Semiconductor Group CM200TU-5F Datasheet

CM200TU-5F
MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
¡IC...................................................................200A
CES ............................................................250V
APPLICATION
Inverters for battery power source
OUTLINE DRAWING & CIRCUIT DIAGRAM
CM
N
21.7
EEE
GGGEE
U
12
2.8
11 21.7 11 21.7 11
±0.25
102
80
Tc measured point
GuP EuP GvP EvP GwP EwP
5–M5NUTS
7.1
107
90
12
11
GGG
12 12
23
LABEL
23
V
±0.25
21.7
23
12
Dimensions in mm
4–φ5.5 MOUNTING HOLES
(4)
P
14.411
11
GuN EuN GvN EvN
48.5 17 3.75
GwN EwN
E
W
3.75
0.8 Tc measured point
4
0.5
+1
29
–0.5
P
26 8.1
GUP E
U
P
U
G
U
N
EUN
N
G E
G EVN
V
P
W
P
G E
V
P
W
P
V
V
W
G
N
W
N
EWN
CIRCUIT DIAGRAM
Sep. 2000
MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM200TU-5F
HIGH POWER SWITCHING USE
Symbol Parameter
CES
V VGES IC ICM IE ( IEM ( PC ( Tj Tstg Viso
Collector-emitter voltage Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature Storage temperature Isolation voltage
Torque strength
Weight
ELECTRICAL CHARACTERISTICS
Symbol
ICES
GE(th)
V IGES
VCE(sat) Cies
Coes Cres QG td(on) tr td(off) tf trr ( Qrr ( VEC( Rth(j-c)Q
th(j-c)R
R
th(c-f)
R Rth(j-c’)Q
Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).
1 : Tc measured point is indicated in OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
Collector cutoff current Gate-emitter threshold voltage
Gate leakage current Collector to emitter saturation voltage
Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance Contact thermal resistance
Thermal resistance
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Parameter
*1
*3
j) should not increase beyond 150°C.
G-E Short C-E Short
C = 25°C
T Pulse (Note 2)
C = 25°C
T Pulse (Note 2)
C = 25°C
T
Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value
(Tj = 25°C)
VCE = VCES, VGE = 0V
C = 20mA, VCE = 10V
I V
GE = VCES, VCE = 0V j = 25°C
T
j = 125°C
T V
CE = 10V GE = 0V
V
CC = 100V, IC = 200A, VGE = 10V
V
V
CC = 100V, IC = 200A GE1 = VGE2 = 10V
V
G = 13, Inductive load switching operation
R
E = 200A
I
I
E = 200A, VGE = 0V
IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied Tc measured point is just under the chips
Conditions UnitRatings
Test conditions
Min. Max.
3.0 5.0 —
I
C = 200A, VGE = 10V
— — — — — — — — — — — — — — —
*2
(1/6 module)
— —
j) does not exceed Tjmax rating.
250 ±20 200 400 200 400
600 –40 ~ +150 –40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5 680
Limits
Typ.
4.0 V —
1.2
1.1 — — —
1500
— — — — —
10.0 — — —
0.09 —
0.5
1.7 — 55
3.5
1.9 —
600 300 900 500 250
2.0
0.21
0.47 —
0.16
V V
A
A
W
°C °C
V N • m N • m
g
Unit
1
mA
µA
V
nF
nC
ns
ns
µC
V
°C/W
Sep. 2000
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