Mitsubishi Electric Corporation Semiconductor Group CM200TU-12F Datasheet

CM200TU-12F

MITSUBISHI IGBT MODULES

CM200TU-12F

HIGH POWER SWITCHING USE

¡IC...................................................................200A

CES ............................................................600V

¡V
¡Insulated Type
¡6-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

107

±0.25

90

23

12

P

11

21.7

V

12 12

W

23

14.411

E

0.8

4

±0.25

102

80

Tc measured point

GuP
EuP
GvP
EvP
GwP
EwP

5–M5NUTS

2.8

7.1

12

CM

N

11

21.7

GGG

EEE

GGGEE

U

12

23

11 21.7 11 21.7 11

LABEL

4–φ5.5
MOUNTING HOLES

GuN
EuN
GvN
EvN

48.5 17 3.75

GwN
EwN

3.75

Tc measured point

P

G

U

PG

26 8.1

U

PE

E

UV

G

U

NG

E

U

NE

N

0.5

+1

29

–0.5

V

PG

RTC RTCRTC

V

PE

V

NG

RTC RTCRTC

V

NE

CIRCUIT DIAGRAM

(4)

Dimensions in mm

W

P

W

P

W

W

N

W

N

Aug. 1999

MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM200TU-12F

HIGH POWER SWITCHING USE

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

ELECTRICAL CHARACTERISTICS

Symbol

ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).

1 : Tc measured point is indicated in OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Parameter

*1

j) should not increase beyond 150°C.

G-E Short
C-E Short

C = 25°C

T
Pulse (Note 2)

C = 25°C

T
Pulse (Note 2)

C = 25°C

T

Main terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value

(Tj = 25°C)

VCE = VCES, VGE = 0V

C = 20mA, VCE = 10V

I
V

GE = VCES, VCE = 0V
j = 25°C

T

j = 125°C

T

CE = 10V

V

GE = 0V

V

CC = 300V, IC = 200A, VGE = 15V

V

V

CC = 300V, IC = 200A
GE1 = VGE2 = 15V

V

G = 3.1Ω, Inductive load switching operation

R

E = 200A

I

I

E = 200A, VGE = 0V

IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compoundapplied
Tc measured point is just under the chips

Conditions UnitRatings

Test conditions

Min. Max.

—

57

—

I

C = 200A, VGE = 15V

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

*2

(1/6 module)

—
—

3.1

j) does not exceed Tjmax rating.

600
±20
200
400
200
400

590
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5
680

Limits

T yp.

—

1

V
V

A

A

W

°C
°C

V
N • m
N • m

g

Unit

mA

6V

—

1.6

1.6
—
—
—

1240

—
—
—
—
—

3.8
—
—
—

0.09
—
—

20

2.2
—
54

3.6

2.0
—

120
100
350
250
150

—

2.6

0.21

0.35
—

0.15
31

µA

V

nF

nC

ns

ns

µC

V

°C/W

✽3

Ω

Aug. 1999