MITSUBISHI CM200TL-24NF User Manual

CM200TL-24NF

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

¡IC...................................................................200A

¡V

CES ......................................................... 1200V

¡Insulated Type
¡6-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

(6.05)

18

48.75

MOUNTING HOLES

4-φ5.5

26.5

(13)

13.75

4

10.5

18

CN

1

WP VP UP

46.3

135

110

±0.5

262617.5

10.5 10.5

VW

11

U

A

B

2530.5 25

LABEL

(6.05)

Dimensions in mm

11.7

18.7

BNP

10.5

10.510.5

(13)

11

13

110

202016.5

±0.5

78

(6.05) (6.05)

6-M5 NUTS

+1

–0.5

24.1

(SCREWING DEPTH)

CN-7
CN-8

Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B

P

UP-1
UP-2

NC

BU

NC

CN-5
CN-6

NC

N

VP-1
VP-2

CN-3
CN-4

V

CIRCUIT DIAGRAM

WP-1
WP-2

CN-1
CN-2

W

Jun. 2004

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

G-E Short
C-E Short
DC, T

C = 72°C

Pulse (Note 2)

Pulse (Note 2)
T

C = 25°C

Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
RG

1 : Tc measured point is just under the chips.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause neglible temperature rise.

Parameter

CE = VCES, VGE = 0V

V
I

C = 20mA, VCE = 10V

V

GE = VGES, VCE = 0V

I

C = 200A, VGE = 15V

CE = 10V

V
V

GE = 0V
CC = 600V, IC = 200A, VGE = 15V

V

V

CC = 600V, IC = 200A

V

GE1 = VGE2 = 15V

R

G = 1.6Ω, Inductive load switching operation

I

E = 200A

E = 200A, VGE = 0V

I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compound Applied (1/6 module)

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Test conditions

j = 25°C

T
T

j = 125°C

*1

*1

j) does not exceed Tjmax rating.

1200

±20
200
400
200
400

1160
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5
750

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

*2

—

1.6

Typ.

—

68

7V

—

2.1

2.4
—
—
—

1000

—
—
—
—
—

9
—
—
—

0.051
—

1

0.5

3.1
—
35

3

0.68
—

130

70

400
350
150

—

3.8

0.11

0.17
—
21

V
V
A
A
A
A

W

°C
°C

V
N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

Ω

Jun. 2004