MITSUBISHI CM200TL-24NF User Manual

CM200TL-24NF

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

¡IC...................................................................200A

¡V

CES ......................................................... 1200V

¡Insulated Type ¡6-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

(6.05)

18

48.75

MOUNTING HOLES

4-φ5.5

26.5

(13)

13.75

4

10.5

18

CN

1

WP VP UP

46.3

135

110

±0.5

262617.5

10.5 10.5

VW

11

U

A

B

2530.5 25

LABEL

(6.05)

Dimensions in mm

11.7

18.7

BNP

10.5

10.510.5

(13)

11

13

110

202016.5

±0.5

78

(6.05) (6.05)

6-M5 NUTS

+1

–0.5

24.1

(SCREWING DEPTH)

CN-7 CN-8

Housing Type of A and B (J.S.T.Mfg.Co.Ltd) A = B8P-VH-FB-B, B = B2P-VH-FB-B

P

UP-1 UP-2

NC

BU

NC

CN-5 CN-6

NC

N

VP-1 VP-2

CN-3 CN-4

V

CIRCUIT DIAGRAM

WP-1 WP-2

CN-1 CN-2

W

Jun. 2004

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES IC ICM IE ( IEM ( PC ( Tj Tstg Viso

Collector-emitter voltage Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature Storage temperature Isolation voltage

—

Torque strength

—

Weight

—

G-E Short C-E Short DC, T

C = 72°C

Pulse (Note 2)

Pulse (Note 2) T

C = 25°C

Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES VCE(sat)

Cies Coes Cres QG td(on) tr td(off) tf trr ( Qrr ( VEC( Rth(j-c)Q

th(j-c)R

R

th(c-f)

R RG

1 : Tc measured point is just under the chips.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

Note 1. I

Collector cutoff current Gate-emitter threshold voltage

Gate leakage current Collector-emitter saturation voltage

Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance Contact thermal resistance

External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause neglible temperature rise.

Parameter

CE = VCES, VGE = 0V

V I

C = 20mA, VCE = 10V

V

GE = VGES, VCE = 0V

I

C = 200A, VGE = 15V

CE = 10V

V V

GE = 0V CC = 600V, IC = 200A, VGE = 15V

V

CC = 600V, IC = 200A

V

GE1 = VGE2 = 15V

R

G = 1.6Ω, Inductive load switching operation

I

E = 200A

E = 200A, VGE = 0V

I IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compound Applied (1/6 module)

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Test conditions

j = 25°C

T T

j = 125°C

*1

j) does not exceed Tjmax rating.

1200

±20 200 400 200 400

1160 –40 ~ +150 –40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5 750

Limits

Min. Max.

—

— — — — — — — — — — — — — — — —

*2

—

1.6

Typ.

—

68

7V

—

2.1

2.4 — — —

1000

— — — — —

9 — — —

0.051 —

1

0.5

3.1 — 35

3

0.68 —

130

70

400 350 150

—

3.8

0.11

0.17 — 21

V V A A A A

W

°C °C

V N • m N • m

g

Unit

mA

µA

V

nF nF nF nC

ns ns ns ns ns

µC

V

°C/W °C/W °C/W

Ω

Jun. 2004

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

400

V

GE

350

(A)

C

300 250 200 150 100

COLLECTOR CURRENT I

20V

50

0

0246810

=

(TYPICAL)

15

13

Tj = 25°C

12

11

10

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

4

V

(V)

CE (sat)

GE

3

2

1

COLLECTOR-EMITTER

9

SATURATION VOLTAGE V

0

0 100 200 300 40050 150 250 350

= 15V

(TYPICAL)

Tj = 25°C T

j

= 125°C

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

(V)

8

CE (sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

GATE-EMITTER VOLTAGE V

CAPACITANCE–V CHARACTERISTICS

2

10

7 5

(nF)

3

res

2

, C

1

10

oes

7

, C

5

ies

3 2

0

10

7 5

3 2

CAPACITANCE C

10

V

GE

–1

10

2

(TYPICAL)

= 0V

0

10

357 2

Tj = 25°C

IC = 400A IC = 200A

IC = 80A

CE

1

10

357 2

CE

GE

(V)

C

ies

C

oes

C

res

357

2012 146 8 10 16 18

10

(V)

COLLECTOR CURRENT IC (A)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7 5

(A)

E

3 2

2

10

7 5

3

EMITTER CURRENT I

2

1

10

0

EMITTER-COLLECTOR VOLTAGE V

(TYPICAL)

Tj = 25°C

j

= 125°C

T

12 435

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

7 5

3 2

2

10

7 5

3 2

1

10

7 5

SWITCHING TIME (ns)

3 2

0

2

10

1

(TYPICAL)

2

10

57

t

d(off)

t

f

t

d(on)

t

r

Conditions: V

CC

= 600V

GE

= ±15V

V

G

= 1.6Ω

R

j

= 125°C

T Inductive load

23 5723

10

3

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

COLLECTOR CURRENT IC (A)

Jun. 2004

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

3

10

(A)

rr

7

(ns)

rr

5 3

2

10

7 5

3 2

REVERSE RECOVERY TIME t

1

10

REVERSE RECOVERY CURRENT l

1

10

(TYPICAL)

23 57

Conditions: V V R T Inductive load

2

10

CC GE G

j

= 25°C

23 57

EMITTER CURRENT I

I

rr

t

rr

= 600V = ±15V

= 1.6Ω

E

(A)

10

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

10

1

–1

7 5

3 2

–2

7 5

3 2

–3

10

0

10

7 5

(ratio)

3 2

th (j–c)

–1

10

7 5

3 2

IGBT part:

–2

10

Per unit base =

7

R

5

NORMALIZED TRANSIENT

3

FWDi part:

3

Per unit base =

2

R

THERMAL IMPEDANCE Z

–3

10

–2

23 57 23 57 23 57 23 57

10

th(j–c)

= 0.11°C/W

th(j–c)

= 0.17°C/W

10

–1

–5

0

10

Single Pulse,

C

= 25°C

T Under the chip

–4

23 57 23 57

10

TIME (s)

SWITCHING LOSS vs.

COLLECTOR CURRENT

(TYPICAL)

2

10

Conditions:

7

CC

= 600V

V

5

GE

= ±15V

V

G

= 1.6Ω

R

3

T

j

= 125°C

2

Inductive load C snubber at bus

1

10

7 5

3 2

SWITCHING LOSS (mJ/pulse)

0

10

1

57

10

2

COLLECTOR CURRENT I

RECOVERY LOSS vs. I

(TYPICAL)

2

10

7 5

3 2

Esw(off)

Esw(on)

23 5723

Err

SWITCHING LOSS vs.

GATE RESISTANCE

(TYPICAL)

2

10

7 5

3 2

3

10

C

(A)

1

10

7 5

3 2

SWITCHING LOSS (mJ/pulse)

0

10

0

10

57

GATE RESISTANCE R

Esw(on)

Esw(off)

Conditions:

CC

= 600V

V

GE

= ±15V

V I

C

= 200A

j

= 125°C

T Inductive load C snubber at bus

1

10

23 5723

2

10

G

(Ω)

RECOVERY LOSS vs.

E

2

10

7 5

3 2

GATE RESISTANCE

(TYPICAL)

1

10

7 5

3 2

RECOVERY LOSS (mJ/pulse)

0

10

1

10

57

10

EMITTER CURRENT I

Conditions:

CC

V

GE

V

G

= 1.6Ω

R T

j

= 125°C

= 600V = ±15V

Inductive load C snubber at bus

2

23 5723

E

(A)

10

1

10

Conditions:

7

CC

= 600V

V

5

GE

= ±15V

V

E

= 200A

I

3

j

= 125°C

T

2

RECOVERY LOSS (mJ/pulse)

3

Inductive load C snubber at bus

0

10

0

10

57

10

GATE RESISTANCE R

Err

1

23 5723

G

(Ω)

10

2

Jun. 2004

20

16

MITSUBISHI IGBT MODULES

CM200TL-24NF

HIGH POWER SWITCHING USE

GATE CHARGE

CHARACTERISTICS

(TYPICAL)

IC = 200A

VCC = 400V

GATE-EMITTER VOLTAGE VGE (V)

12

VCC = 600V

8

4

0

400 800 1200200 600 1000 1400

GATE CHARGE QG (nC)

Jun. 2004

MITSUBISHI CM200TL-24NF User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual