MITSUBISHI CM200TL-12NF User Manual

CM200TL-12NF

MITSUBISHI IGBT MODULES

CM200TL-12NF

HIGH POWER SWITCHING USE

¡IC...................................................................200A

¡V

CES ............................................................600V

¡Insulated Type
¡6-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

(6.05)

18

48.75

MOUNTING HOLES

4-φ5.5

26.5

(13)

13.75

4

10.5

18

CN

1

WP VP UP

46.3

135

110

±0.5

262617.5

10.5 10.5

VW

11

U

A

B

2530.5 25

LABEL

(6.05)

Dimensions in mm

11.7

18.7

BNP

10.5

10.510.5

(13)

11

13

110

202016.5

±0.5

78

(6.05) (6.05)

6-M5 NUTS

+1

–0.5

24.1

(SCREWING DEPTH)

CN-7
CN-8

Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B

P

UP-1
UP-2

NC

BU

NC

CN-5
CN-6

NC

N

VP-1
VP-2

CN-3
CN-4

V

CIRCUIT DIAGRAM

WP-1
WP-2

CN-1
CN-2

W

Jun. 2004

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM200TL-12NF

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

G-E Short
C-E Short
DC, T

C = 88°C

Pulse (Note 2)

Pulse (Note 2)
T

C = 25°C

Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol

I

CES

V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
RG

1 : Tc measured point is just under the chips.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

External gate resistance

If you use this value, R

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause neglible temperature rise.

Parameter

CE = VCES, VGE = 0V

V
IC = 20mA, VCE = 10V

V

GE = VGES, VCE = 0V

I

C = 200A, VGE = 15V

CE = 10V

V
V

GE = 0V
CC = 300V, IC = 200A, VGE = 15V

V

CC = 300V, IC = 200A

V
V

GE1 = VGE2 = 15V

R

G = 3.1Ω, Inductive load switching operation

I

E = 200A

E = 200A, VGE = 0V

I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compound Applied (1/6 module)

th(f-a) should be measured just under the chips.

j) should not increase beyond 150°C.

Test conditions

T

j = 25°C

T

j = 125°C

*1

*1

j) does not exceed Tjmax rating.

600
±20
200
400
200
400

890
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

2.5 ~ 3.5
750

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

*2

—

3.1

Typ.

—

68

7V

—

1.7

1.7
—
—
—

800

—
—
—
—
—

4.8
—
—
—

0.051
—

1

0.5

2.2
—
30

3.7

1.2
—

120
100
300
300
150

—

2.8

0.14

0.22
—
31

V
V
A
A
A
A

W

°C
°C

V
N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

Ω

Jun. 2004

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

400

V

GE

=

(A)

C

20V

300

(TYPICAL)

15

13

Tj = 25°C

12

MITSUBISHI IGBT MODULES

CM200TL-12NF

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

(V)

CE (sat)

VOLTAGE CHARACTERISTICS

4

V

GE

3

(TYPICAL)

= 15V

200

100

COLLECTOR CURRENT I

0

0246810

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

(V)

8

CE (sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

Tj = 25°C

IC = 200A

IC = 400A

IC = 60A

11

10

CE

2

1

COLLECTOR-EMITTER

98

(V)

SATURATION VOLTAGE V

0

0 100 200 300 400

COLLECTOR CURRENT IC (A)

Tj = 25°C

j

= 125°C

T

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7
5

(A)

E

3
2

2

10

7
5

3

EMITTER CURRENT I

2

1

2012 146 8 10 16 18

10

0

(TYPICAL)

Tj = 25°C

j

= 125°C

T

12 435

GATE-EMITTER VOLTAGE V

CAPACITANCE–V
CHARACTERISTICS

2

10

7
5

(nF)

3

res

2

, C

1

10

oes

7

, C

5

ies

3
2

0

10

7
5

3
2

CAPACITANCE C

V

GE

–1

10

–1

10

2

(TYPICAL)

= 0V

0

10

357 2

357 2

COLLECTOR-EMITTER VOLTAGE V

10

CE

1

GE

(V)

C

ies

C

oes

C

res

357

CE

10

(V)

EMITTER-COLLECTOR VOLTAGE V

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

7
5

3
2

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME (ns)

3
2

0

2

10

10

1

(TYPICAL)

2

10

57

t

f

t

d(off)

t

d(on)

t

r

Conditions:

CC

= 300V

V

GE

= ±15V

V

G

= 3.1Ω

R

j

= 125°C

T
Inductive load

23 5723

10

3

COLLECTOR CURRENT IC (A)

Jun. 2004

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

3

10

(A)

rr

7

(ns)

rr

5
3

2

2

10

7
5

3
2

REVERSE RECOVERY TIME t

1

10

REVERSE RECOVERY CURRENT l

1

10

23 57

Conditions:
V
V
R
T
Inductive load

2

10

CC
GE
G

j

= 25°C

23 57

EMITTER CURRENT I

I

rr

t

rr

= 300V
= ±15V

= 3.1Ω

E

(A)

10

MITSUBISHI IGBT MODULES

CM200TL-12NF

HIGH POWER SWITCHING USE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

10

10

10

10

10

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

–3

10

0

10

7
5

(ratio)

3
2

th (j–c)

–1

10

7
5

3
2

IGBT part:

–2

10

Per unit base =

7

R

5

NORMALIZED TRANSIENT

3

FWDi part:

3

Per unit base =

2

R

THERMAL IMPEDANCE Z

–3

10

–2

23 57 23 57 23 57 23 57

10

th(j–c)

= 0.14°C/W

th(j–c)

= 0.22°C/W

10

10

–1

–5

0

10

Single Pulse,

C

= 25°C

T
Under the chip

–4

23 57 23 57

10

TIME (s)

SWITCHING LOSS vs.

COLLECTOR CURRENT

(TYPICAL)

1

10

7
5

3
2

0

10

7
5

3
2

SWITCHING LOSS (mJ/pulse)

–1

10

10

1

57

10

2

COLLECTOR CURRENT I

RECOVERY LOSS vs. I

(TYPICAL)

1

10

7
5

3
2

Esw(off)

Esw(on)

Conditions:

CC

V
V

GE

G

= 3.1Ω

R

j

= 125°C

T

= 300V
= ±15V

Inductive load
C snubber at bus

23 5723

C

(A)

E

Err

10

SWITCHING LOSS vs.

GATE RESISTANCE

(TYPICAL)

2

10

Conditions:

7

CC

= 300V

V

5

V

GE

= ±15V

C

= 200A

I

3

j

= 125°C

T

2

Inductive load
C snubber at bus

1

10

7
5

3
2

SWITCHING LOSS (mJ/pulse)

0

3

10

10

0

57

10

GATE RESISTANCE R

Esw(on)

Esw(off)

1

23 5723

G

(Ω)

10

2

RECOVERY LOSS vs.

GATE RESISTANCE

10

1

7
5

3
2

(TYPICAL)

Err

0

10

7
5

3
2

RECOVERY LOSS (mJ/pulse)

–1

10

1

10

57

10

EMITTER CURRENT I

Conditions:
V

CC
GE

V

G

= 3.1Ω

R

j

= 125°C

T

= 300V
= ±15V

Inductive load
C snubber at bus

2

23 5723

E

(A)

10

0

10

Conditions:

7

V

CC

= 300V

5

GE

= ±15V

V

E

= 200A

I

3

j

= 125°C

T

2

RECOVERY LOSS (mJ/pulse)

3

Inductive load
C snubber at bus

–1

10

0

10

1

10

57

23 5723

GATE RESISTANCE R

2

10

G

(Ω)

Jun. 2004

GATE-EMITTER VOLTAGE VGE (V)

20

15

10

5

0

0

0

MITSUBISHI IGBT MODULES

CM200TL-12NF

HIGH POWER SWITCHING USE

GATE CHARGE

CHARACTERISTICS

(TYPICAL)

IC = 200A

VCC = 200V

VCC = 300V

400 800 1000200 600 1200

GATE CHARGE QG (nC)

Jun. 2004