Page 1
CM200RX-12A
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
CES ............................................................ 600V
¡V
¡7pack (3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
φ4.3
φ2.5
φ2.1
1.5
12.5
SECTION A
17
13
(3) (5.4)
12.5
(SCREWING DEPTH)
+1
17
-0.5
P(35)
B(4)
GB(6)
EB(5)
N(36)
GuP(34)
EuP(33)
GuN(30)
EuN(29)
22
39
14
13.64
(20.5)
(21.14)
6.5
126617
12
17
(21.14)
6.5
GvP(26)
EvP(25)
U(1)
GvN(22)
EvN(21)
CIRCUIT DIAGRAM
0
15
18.8
＊
(7.75)
＊
34
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
35
36
12 43
12 17
13.5 20.71 22.86 22.86 22.86
GwP(18)
EwP(17)
V(2)
GwN(14)
EwN(13)
LABEL
49.28
45.48
34.04
30.24
＊
＊
＊
＊
136.9
121.7
110
99
94.5
8.5
6
TH1(11)
NTC
TH2(10)
W(3)
±0.5
64.52
60.72
＊
＊
0.8
79.76
75.96
＊
＊
91.2
＊
95
＊
(102.25)
(110)
114.06
＊
3.5
4-φ5.5 MOUNTING HOLES
12
11
10
9
±0.5
8
39
7
6
5
57.5
50
A
6-M5 NUTS
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
62
77.1
＊Pin positions
with tolerance
Dimensions in mm
1.15
0.65
(3.81)
1.2
TERMINAL t = 0.8
0.8
＊
54.2
(50)
＊
34.52
＊
30.72
＊
15.48
＊
11.66
0
φ0.5
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
(7.4)
(20.5)
7
Jan. 2009
Page 2
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
BRAKE PART
Symbol Parameter Conditions
CES
V
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 68°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
G-E Short
C-E Short
DC, T
C
= 75°C
Pulse
T
C
= 25°C
C
= 25°C
T
Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
600
±20
200
400
735
200
400
Rating Unit
600
±20
100
200
400
600
100
200
V
A
W
A
V
A
W
V
A
MODULE
Symbol Parameter Conditions
j
T
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Junction temperature
Storage temperature
Isolation voltage
—
Base plate flatness
—
Torque strength
—
Torque strength
—
Weight
+
–
Heatsinkside
X
Heatsinkside
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
Main terminals
Mounting
M5 screw
M5 screw
(Typical)
Y
–
+
+：convex
–：concave
(Note. 8)
Rating Unit
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
2.5 ~ 3.5
330
°C
Vrms
μm
N·m
g
Jan. 2009
2
Page 3
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, VGE = 0V
I
C
= 20mA, VCE = 10V
±V
GE
= V
GES
, VCE = 0V
I
C
= 200A, VGE = 15V
C
= 200A, VGE = 15V
I
V
CE
= 10V
V
GE
= 0V
CC
= 300V, IC = 200A, VGE = 15V
V
V
CC
= 300V, IC = 200A
V
GE
= ±15V, RG = 5.1Ω
Inductive load
(I
E
= 200A)
E
= 200A, VGE = 0V
I
E
= 200A, VGE = 0V
I
per IGBT
per free wheeling diode
T
C
= 25°C, per switch
(Note. 6)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
5
6
—
1.7
1.9
1.6
—
—
—
530
—
—
—
—
—
5
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
27
2.7
0.8
—
120
150
350
600
200
—
2.8
—
—
0.17
0.33
—
31
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol Parameter Conditions
I
CES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
I
RRM(Note.3)
VFM(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE = VCES, VGE = 0V
I
C = 10mA, VCE = 10V
±V
GE = VGES, VCE = 0V
I
C = 100A, VGE = 15V
C = 100A, VGE = 15V
I
V
CE = 10V
V
GE = 0V
CC = 300V, IC = 100A, VGE = 15V
V
V
R = VRRM
IF = 100A
F = 100A
I
per IGBT
per Clamp diode
T
C = 25°C
(Note. 6)
(Note. 6)
T
j = 25°C
T
j = 125°C
Chip
T
j = 25°C
T
j = 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
—
5
6
—
1.7
1.9
1.6
—
—
—
270
—
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
13.3
1.4
0.45
—
1
2.8
—
—
0.31
0.59
—
62
Unit
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Jan. 2009
3
Page 4
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
—
—
—
Limits
5.00
—
3375
—
Limits
0.015 —
Symbol Parameter Conditions
R
ΔR/R
B
(25/50)
P
25
Zero power resistance
Deviation of resistance
B constant
Power dissipation
T
C
= 25°C
T
C
= 100°C, R
100
= 493Ω
Approximate by equation
T
C
= 25°C
(Note. 7)
Min. Typ. Max.
4.85
–7.3
MODULE
Symbol Parameter Conditions
Contact t
R
th(c-f)
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: I
E, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
F, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
I
4: Pulse width and repetition rate should be such that the device junction temperature (T
5: Junction temperature (T
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for V
7:
B
(25/50)
= In( )/( )
R25: resistance at absolute temperature T
50
: resistance at absolute temperature T
R
hermal resistance
(Case to fin)
25
R
R
50
(Note. 1)
j) should not increase beyond 150°C.
1
1
T
T
25
50
Thermal grease applied
per 1 module
CE(sat) and VEC)
25
[K]; T
25
= 25 [°C]+273.15 = 298.15 [K]
50
[K]; T
50
= 50 [°C]+273.15 = 323.15 [K]
(Note. 2)
j) dose not exceed Tjmax rating.
Min. Typ. Max.
5.15
+7.8
—
10
Unit
kΩ
%
K
mW
Unit
K/W
Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)
LABEL SIDE
22.9
33.9
44.9
T
V
D
V
r
P
i
P
(136.9)
55.9
T
r
V
N
D
i
V
N
(110)
(121.7)
(77.1)
(62)
(50)
17.4
24.4
28.0
35.0
0
0
34
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
T
r
35
U
P
T
r
D
i
U
N
U
P
D
i
U
36
N
12 43
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
79.4
91.4
92.4
100.2
101.8
106.0
0
T
r
W
P
D
i
W
P
D
i
12
B
r
T
r
T
h
W
N
D
i
W
N
T
r
B
r
18.3
11
10
26.8
9
8
7
39.7
6
5
Jan. 2009
4
Page 5
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
VGE = 15V
V
GuP
EuP
VGE = 0V
GuN
EuN
P side Inverter part T
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
VGE = 0V
V
GuP
EuP
P
GE
= 0V
V
I
C
GuP
EuP
U
VGE = 15V
GuN
EuN
P
U
VGE = 15V
V
I
C
N
GB
EB
P
B
V
I
C
N
N
r
N side Inverter part T
r
r Tr
B
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
CE(sat)
test circuit
V
P
GE
= 0V
V
I
E
GuP
EuP
U
P
U
VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-EuN, GvN-EvN, GwN-EwN)
P
V
I
F
B
V
GE
= 0V
GuN
EuN
P side Inverter part D
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
Arm
–
V
GE
+
V
GE
R
G
0V
–
V
V
GE
GE
VGE = 0V
GuN
EuN
N
i
N side Inverter part D
(example of U arm)
GE
= 0V(GvP-EvP, GwP-EwP, GvN-EvN,
V
GwN-EwN, GB-EB)
EC/VFM
V
V
0V
0A
t
d(on)
GE
I
C
t
r
t
Load
V
CE
I
E
VCC+
C
I
Switching time test circuit and waveforms
N
test circuit
90%
0%
d(off)
90%
t
f
V
I
E
VGE = 0V
GB
EB
N
i
r Di
B
VGE = 0V(GuP-EuP, GvP-EvP, GwP-EwP,
GuN-EuN, GvN-EvN, GwN-EwN)
I
E
t
rr
10%
0A
I
rr
1/2 ✕ I
Q
rr
t
rr
= 1/2 ✕ Irr ✕ t
rr
trr, Qrr test waveform
Jan. 2009
5
Page 6
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
400
V
GE
=
20V
(A)
C
300
(TYPICAL) Inverter part
15
Tj = 25°C
13
12
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
V
GE
= 15V
(V)
CE(sat)
3.5
3
2.5
200
100
COLLECTOR CURRENT I
0
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Inverter part
10
(V)
8
CE(sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
11
10
Tj = 25°C
IC = 200A
IC = 400A
IC = 80A
9
8
100 246813579
206 8 10 12 14 16 18
2
1.5
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
0
100 200 300 400
COLLECTOR CURRENT I
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Inverter part
3
10
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
10
0 0.5 1 1.5 2 2.5 3 3.5 4
Tj = 25°C
T
j
= 125°C
C
(A)
Tj = 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE CHARACTERISTICS
(TYPICAL) Inverter part
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
CAPACITANCE (nF)
5
3
2
V
GE
= 0V
–1
10
10
–1
2
0
10
357 2
1
10
357 2
COLLECTOR-EMITTER VOLTAGE VCE (V)
C
ies
C
oes
C
res
357
10
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL) Inverter part
4
10
7
5
3
2
t
f
3
10
7
5
t
d(off)
3
2
2
10
7
t
d(on)
5
3
2
1
t
7
5
3
2
0
10
1
r
23 57
10
SWITCHING TIME (ns)
2
10
COLLECTOR CURRENT I
10
2
Conditions:
V
CC
= 300V
V
GE
= ±15V
R
G
= 5.1Ω
T
j
= 125°C
Inductive load
23 57
C
(A)
10
3
Jan. 2009
6
Page 7
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
SWITCHING CHARACTERISTICS
HALF-BRIDGE
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
SWITCHING TIME (ns)
3
2
0
10
10
(TYPICAL) Inverter part
t
f
t
d(off)
t
d(on)
t
r
0
57
10
1
GATE RESISTANCE R
HALF-BRIDGE
SWITCHING CHARACTERISTICS
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
SWITCHING LOSS (mJ/pulse)
2
–1
10
10
(TYPICAL) Inverter part
Conditions:
V
CC
= 300V
V
GE
= ±15V
I
C
, IE = 200A
T
j
= 125°C
Inductive load
0
57
10
1
Conditions:
V
CC
= 300V
V
GE
= ±15V
I
C
= 200A
T
j
= 125°C
Inductive load
23 5723
G
(Ω)
E
on
E
off
E
rr
23 5723
10
10
SWITCHING CHARACTERISTICS
HALF-BRIDGE
(TYPICAL) Inverter part
2
10
Conditions:
7
5
V
CC
= 300V
3
V
GE
= ±15V
2
R
G
= 5.1Ω
T
j
= 125°C
1
10
Inductive load
7
5
3
2
0
10
7
5
3
SWITCHING LOSS (mJ/pulse) l
2
–1
10
2
10
1
57
COLLECTOR CURRENT I
EMITTER CURRENT I
10
E
off
E
on
E
rr
2
23 5723
C
E
(A)
(A)
10
3
REVERSE RECOVERY CHARACTERISTICS
OF FREE WHEELING DIODE
(TYPICAL) Inverter part
3
10
Conditions:
7
V
CC
= 300V
5
V
GE
= ±15V
R
G
= 5.1Ω
3
T
j
= 25°C
2
Inductive load
(ns)
rr
2
10
(A), t
7
rr
5
3
2
1
10
2
10
1
57
10
I
rr
t
rr
2
23 5723
10
3
GATE RESISTANCE R
GATE CHARGE CHARACTERISTICS
(TYPICAL) Inverter part
20
IC = 200A
(V)
GE
VCC = 200V
15
10
5
GATE-EMITTER VOLTAGE V
0
0 200 400 600 800
GATE CHARGE QG (nC)
G
(Ω)
VCC = 300V
0
10
7
5
3
th(j–c)
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
THERMAL IMPEDANCE Z
2
–3
10
–5
10
7
EMITTER CURRENT I
E
(A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
Single pulse
T
C
= 25°C
Inverter IGBT part : Per unit base = R
Inverter FWDi part : Per unit base = R
Brake IGBT part : Per unit base = R
Brake Clamp-Di part : Per unit base = R
–4
10
23 57
10
–3
23 57
23 57
10
–2
23 57
10
th(j–c)
th(j–c)
th(j–c)
th(j–c)
–1
23 57
= 0.17K/W
= 0.33K/W
= 0.31K/W
= 0.59K/W
10
TIME (s)
0
23 57
1
10
Jan. 2009
Page 8
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL) Brake part
3.5
3.5
V
GE
= 15V
V
GE
= 15V
3
3
2.5
2.5
2
2
1.5
1.5
1
1
COLLECTOR-EMITTER
0.5
0.5
SATURATION VOLTAGE VCE(sat) (V)
0
0
0
0
50 100 150 200
50 100 150 200
COLLECTOR CURRENT IC (A)
Tj = 25°C
Tj = 25°C
T
T
j
= 125°C
j
= 125°C
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL) Brake part
3
10
7
5
3
(A)
F
2
2
10
7
5
3
2
1
10
7
5
3
FORWARD CURRENT I
2
0
10
0 0.5 1 1.5 2 2.5 3 3.5 4
FORWARD VOLTAGE VF (V)
Tj = 25°C
T
j
= 125°C
Jan. 2009
8
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