MITSUBISHI CM200RX-12A User Manual
CM200RX-12A
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
¡IC ...................................................................200A
CES ............................................................ 600V
¡V
¡7pack (3-phase Inverter + Brake)
¡Flatbase Type / Insulated Package /
Copper (non-plating) base plate
¡RoHS Directive compliant
APPLICATION
General purpose Inverters, Servo Amplifiers
OUTLINE DRAWING & CIRCUIT DIAGRAM
φ4.3
φ2.5
φ2.1
1.5
12.5
SECTION A
17
13
(3) (5.4)
12.5
(SCREWING DEPTH)
+1
17
-0.5
P(35)
B(4)
GB(6)
EB(5)
N(36)
GuP(34)
EuP(33)
GuN(30)
EuN(29)
22
39
14
13.64
(20.5)
(21.14)
6.5
126617
12
17
(21.14)
6.5
GvP(26)
EvP(25)
U(1)
GvN(22)
EvN(21)
CIRCUIT DIAGRAM
0
15
18.8
＊
(7.75)
＊
34
33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
35
36
12 43
12 17
13.5 20.71 22.86 22.86 22.86
GwP(18)
EwP(17)
V(2)
GwN(14)
EwN(13)
LABEL
49.28
45.48
34.04
30.24
＊
＊
＊
＊
136.9
121.7
110
99
94.5
8.5
6
TH1(11)
NTC
TH2(10)
W(3)
±0.5
64.52
60.72
＊
＊
0.8
79.76
75.96
＊
＊
91.2
＊
95
＊
(102.25)
(110)
114.06
＊
3.5
4-φ5.5 MOUNTING HOLES
12
11
10
9
±0.5
8
39
7
6
5
57.5
50
A
6-M5 NUTS
Toleranceotherwisespecified
Division of Dimension
0.5 to 3
over 3 to 6
over 6 to 30
over 30 to 120
over 120 to 400
62
77.1
＊Pin positions
with tolerance
Dimensions in mm
1.15
0.65
(3.81)
1.2
TERMINAL t = 0.8
0.8
＊
54.2
(50)
＊
34.52
＊
30.72
＊
15.48
＊
11.66
0
φ0.5
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
(7.4)
(20.5)
7
Jan. 2009
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions Rating Unit
CES
V
V
GES
I
C
I
CRM
P
C
I
E (Note.3)
I
ERM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Emitter current
(Free wheeling diode forward current)
BRAKE PART
Symbol Parameter Conditions
CES
V
V
GES
I
C
I
CRM
P
C
V
RRM(Note.3)
I
F (Note.3)
I
FRM(Note.3)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Maximum collector dissipation
Repetitive peak reverse voltage
Forward current
G-E Short
C-E Short
DC, T
C
= 68°C
Pulse
T
C
= 25°C
T
C
= 25°C
Pulse
G-E Short
C-E Short
DC, T
C
= 75°C
Pulse
T
C
= 25°C
C
= 25°C
T
Pulse
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
(Note. 1)
(Note. 4)
(Note. 1, 5)
(Note. 1)
(Note. 4)
600
±20
200
400
735
200
400
Rating Unit
600
±20
100
200
400
600
100
200
V
A
W
A
V
A
W
V
A
MODULE
Symbol Parameter Conditions
j
T
T
stg
V
iso
Note. 8: The base plate flatness measurement points are in the following figure.
Junction temperature
Storage temperature
Isolation voltage
—
Base plate flatness
—
Torque strength
—
Torque strength
—
Weight
+
–
Heatsinkside
X
Heatsinkside
Terminals to base plate, f = 60Hz, AC 1 minute
On the centerline X, Y
Main terminals
Mounting
M5 screw
M5 screw
(Typical)
Y
–
+
+：convex
–：concave
(Note. 8)
Rating Unit
–40 ~ +150
–40 ~ +125
2500
±0 ~ +100
2.5 ~ 3.5
2.5 ~ 3.5
330
°C
Vrms
μm
N·m
g
Jan. 2009
2
MITSUBISHI IGBT MODULES
CM200RX-12A
HIGH POWER SWITCHING USE
ELECTRICAL CHARACTERISTICS (T
j
= 25°C, unless otherwise specified)
INVERTER PART
Symbol Parameter Conditions
I
CES
V
GE(th)
I
GES
V
CE(sat)
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
t
rr (Note.3)
Q
rr (Note.3)
V
EC(Note.3)
R
th(j-c)Q
R
th(j-c)R
R
Gint
R
G
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE
= V
CES
, VGE = 0V
I
C
= 20mA, VCE = 10V
±V
GE
= V
GES
, VCE = 0V
I
C
= 200A, VGE = 15V
C
= 200A, VGE = 15V
I
V
CE
= 10V
V
GE
= 0V
CC
= 300V, IC = 200A, VGE = 15V
V
V
CC
= 300V, IC = 200A
V
GE
= ±15V, RG = 5.1Ω
Inductive load
(I
E
= 200A)
E
= 200A, VGE = 0V
I
E
= 200A, VGE = 0V
I
per IGBT
per free wheeling diode
T
C
= 25°C, per switch
(Note. 6)
(Note. 6)
T
j
= 25°C
T
j
= 125°C
Chip
T
j
= 25°C
T
j
= 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.0
—
5
6
—
1.7
1.9
1.6
—
—
—
530
—
—
—
—
—
5
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
27
2.7
0.8
—
120
150
350
600
200
—
2.8
—
—
0.17
0.33
—
31
Unit
mA
V
μA
V
nF
nC
ns
μC
V
K/W
Ω
BRAKE PART
Symbol Parameter Conditions
I
CES
VGE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
I
RRM(Note.3)
VFM(Note.3)
Rth(j-c)Q
Rth(j-c)R
RGint
RG
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Repetitive peak reverse current
Forward voltage drop
Thermal resistance
(Junction to case)
(Note. 1)
Internal gate resistance
External gate resistance
V
CE = VCES, VGE = 0V
I
C = 10mA, VCE = 10V
±V
GE = VGES, VCE = 0V
I
C = 100A, VGE = 15V
C = 100A, VGE = 15V
I
V
CE = 10V
V
GE = 0V
CC = 300V, IC = 100A, VGE = 15V
V
V
R = VRRM
IF = 100A
F = 100A
I
per IGBT
per Clamp diode
T
C = 25°C
(Note. 6)
(Note. 6)
T
j = 25°C
T
j = 125°C
Chip
T
j = 25°C
T
j = 125°C
Chip
(Note. 6)
Limits
Min. Typ. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.0
—
5
6
—
1.7
1.9
1.6
—
—
—
270
—
2.0
1.95
1.9
—
—
0
—
1
7
0.5
2.1
—
—
13.3
1.4
0.45
—
1
2.8
—
—
0.31
0.59
—
62
Unit
mA
V
μA
V
nF
nC
mA
V
K/W
Ω
Jan. 2009
3
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