MITSUBISHI CM200DY-24A User Manual
CM200DY-24A
MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
¡IC...................................................................200A
¡V
CES ......................................................... 1200V
¡Insulated Type
¡2-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
94
232317
17
2-φ6.5 MOUNTING HOLES
C2E1
13
48
12 12 12
E2
80
±0.25
C1
E2 G2
E1G1
4184
3-M5 NUTS
20
(14)
4
+1.0
29
–0.5
16 7 16 7 16
LABEL
TAB #110. t=0.5
C2E1
21.2 7.5
E2
CIRCUIT DIAGRAM
E2 G2G1 E1
C1
Jul. 2004
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
—
G-E Short
C-E Short
DC, T
C = 84°C
Pulse (Note 2)
Pulse (Note 2)
C = 25°C
*1
T
Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value
Conditions UnitRatings
*1
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
RG
1 : Tc, Tf measured point is just under the chips.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
External gate resistance
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
Parameter
CE = VCES, VGE = 0V
V
IC = 20mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
CE = 10V
V
V
GE = 0V
CC = 600V, IC = 200A, VGE = 15V
V
CC = 600V, IC = 200A
V
V
GE1 = VGE2 = 15V
R
G = 1.6Ω, Inductive load switching operation
I
E = 200A
E = 200A, VGE = 0V
I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied (1/2 module)
j) should not increase beyond 150°C.
Test conditions
I
C = 200A, VGE = 15V
*1
*1
j) does not exceed Tjmax rating.
MITSUBISHI IGBT MODULES
CM200DY-24A
HIGH POWER SWITCHING USE
1200
±20
200
400
200
400
1340
–40 ~ +150
–40 ~ +125
2500
Min. Max.
—
68
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
*1,*2
—
1.6
2.5 ~ 3.5
3.5 ~ 4.5
310
Limits
Typ.
—
7V
—
2.1
2.4
—
—
—
1000
—
—
—
—
—
9.0
—
0.093
—
—
0.022
—
1
0.5
3.0
—
35
3
0.68
—
130
100
450
350
150
—
3.8
0.17
—
21
N • m
Unit
°C/W
V
V
A
A
W
°C
°C
V
g
mA
µA
V
nF
nC
ns
ns
µC
V
Ω
Jul. 2004
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