MITSUBISHI CM200DY-24A User Manual

CM200DY-24A

MITSUBISHI IGBT MODULES

CM200DY-24A

HIGH POWER SWITCHING USE

¡IC...................................................................200A

¡V

CES ......................................................... 1200V

¡Insulated Type
¡2-elements in a pack

APPLICATION

AC drive inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

94

232317

17

2-φ6.5 MOUNTING HOLES

C2E1

13

48

12 12 12

E2

80

±0.25

C1

E2 G2

E1G1

4184

3-M5 NUTS

20

(14)

4

+1.0

29

–0.5

16 7 16 7 16

LABEL

TAB #110. t=0.5

C2E1

21.2 7.5

E2

CIRCUIT DIAGRAM

E2 G2G1 E1

C1

Jul. 2004

ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

—

G-E Short
C-E Short
DC, T

C = 84°C

Pulse (Note 2)

Pulse (Note 2)

C = 25°C

*1

T

Main terminal to base plate, AC 1 min.
Main terminal M5
Mounting holes M6
Typical value

Conditions UnitRatings

*1

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
RG

1 : Tc, Tf measured point is just under the chips.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold
voltage
Gate leakage current
Collector-emitter saturation
voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

External gate resistance

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

Parameter

CE = VCES, VGE = 0V

V
IC = 20mA, VCE = 10V

V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C
CE = 10V

V
V

GE = 0V
CC = 600V, IC = 200A, VGE = 15V

V

CC = 600V, IC = 200A

V
V

GE1 = VGE2 = 15V

R

G = 1.6Ω, Inductive load switching operation

I

E = 200A

E = 200A, VGE = 0V

I
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied (1/2 module)

j) should not increase beyond 150°C.

Test conditions

I

C = 200A, VGE = 15V

*1

*1

j) does not exceed Tjmax rating.

MITSUBISHI IGBT MODULES

CM200DY-24A

HIGH POWER SWITCHING USE

1200

±20
200
400
200
400

1340
–40 ~ +150
–40 ~ +125

2500

Min. Max.

—

68

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

*1,*2

—

1.6

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Typ.

—

7V

—

2.1

2.4
—
—
—

1000

—
—
—
—
—

9.0
—

0.093

—
—

0.022
—

1

0.5

3.0
—
35

3

0.68
—

130
100
450
350
150

—

3.8

0.17
—
21

N • m

Unit

°C/W

V
V

A

A

W

°C
°C

V

g

mA

µA

V

nF

nC

ns

ns

µC

V

Ω

Jul. 2004

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

400

V

GE

350

(A)

C

300
250
200
150
100

COLLECTOR CURRENT I

20V

50

0

0 46810

=

2

(TYPICAL)

15

13

Tj = 25°C

12

11

10

MITSUBISHI IGBT MODULES

CM200DY-24A

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

4

V

(V)

CE (sat)

GE

3

2

1

COLLECTOR-EMITTER

9

SATURATION VOLTAGE V

0

0 100 300 350 400200 250150

50

= 15V

(TYPICAL)

Tj = 25°C
T

j

= 125°C

COLLECTOR-EMITTER VOLTAGE V

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

10

(V)

8

CE (sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

GATE-EMITTER VOLTAGE V

CAPACITANCE–V
CHARACTERISTICS

2

10

7
5

(nF)

3

res

2

, C

1

10

oes

7

, C

5

ies

3
2

0

10

7
5

3
2

CAPACITANCE C

10

V

GE

–1

–1

2

10

(TYPICAL)

= 0V

0

10

357 2

Tj = 25°C

IC = 400A
IC = 200A

IC = 80A

CE

1

10

357 2

GE

C

ies

C

oes

C

res

357

(V)

CE

2012 146 8 10 16 18

10

(V)

COLLECTOR CURRENT IC (A)

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

3

10

7
5

(A)

E

3
2

2

10

7
5

3

EMITTER CURRENT I

2

1

10

012 435

EMITTER-COLLECTOR VOLTAGE V

(TYPICAL)

Tj = 25°C

j

= 125°C

T

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

3

10

t

d(off)

7
5

t

f

3
2

2

10

7
5

3
2

1

10

7
5

SWITCHING TIME (ns)

3
2

0

2

10

10

1

(TYPICAL)

2

10

57

t

d(on)

t

r

Conditions:
V

CC

= 600V

GE

= ±15V

V

G

= 1.6Ω

R

j

= 125°C

T
Inductive load

23 5723

10

3

COLLECTOR-EMITTER VOLTAGE V

CE

(V)

COLLECTOR CURRENT IC (A)

Jul. 2004

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

3

10

(A)

rr

7

(ns)

rr

5
3

2

2

10

7
5

3
2

REVERSE RECOVERY TIME t

1

10

REVERSE RECOVERY CURRENT l

1

10

(TYPICAL)

23 57

10

2

Conditions:
V
V
R
T
Inductive load

23 57

EMITTER CURRENT I

I

rr

t

rr

CC

= 600V

GE

= ±15V

G

= 1.6Ω

j

= 25°C

E

(A)

10

MITSUBISHI IGBT MODULES

CM200DY-24A

HIGH POWER SWITCHING USE

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

10

10

10

10

10

1

–1

7
5

3
2

–2

7
5

3
2

–3

–3

–3

10

0

10

7
5

(ratio)

3
2

th (j–c’)

–1

10

7
5

3
2

IGBT part:

–2

10

Per unit base =

7

R

5

NORMALIZED TRANSIENT

3

FWDi part:

3

Per unit base =

2

R

THERMAL IMPEDANCE Z

–3

10

–2

23 57 23 57 23 57 23 57

10

th(j–c)

= 0.093°C/W

th(j–c)

= 0.17°C/W

10

10

–1

–5

0

10

Single Pulse

C’

= 25°C

T
Under the chip

–4

23 57 23 57

10

TIME (s)

SWITCHING LOSS vs.

COLLECTOR CURRENT

= 600V
= ±15V

(TYPICAL)

2

10

57

2

10

Conditions:

7

CC

V

5

GE

V

G

= 1.6Ω

R

3

j

= 125°C

T

2

Inductive load
C snubber at bus

1

10

7
5

3
2

SWITCHING LOSS (mJ/pulse)

0

10

1

10

COLLECTOR CURRENT I

RECOVERY LOSS vs. I

(TYPICAL)

2

10

Conditions:

7

CC

= 600V

V

5

GE

= ±15V

V

G

= 1.6Ω

R

3

T

j

= 125°C

2

Inductive load
C snubber at bus

1

10

7
5

3
2

RECOVERY LOSS (mJ/pulse)

0

10

10

1

57

10

2

Esw(off)

Esw(on)

23 5723

Err

23 5723

SWITCHING LOSS vs.

GATE RESISTANCE

(TYPICAL)

2

10

7
5

3
2

3

10

C

(A)

1

10

7
5

3
2

SWITCHING LOSS (mJ/pulse)

SWITCHING LOSS (mJ/pulse)

0

10

0

10

57

GATE RESISTANCE R

Esw(on)

Esw(off)

Conditions:

CC

= 600V

V
V

GE

= ±15V

C

= 200A

I

j

= 125°C

T
Inductive load
C snubber at bus

1

10

23 5723

2

10

G

(Ω)

RECOVERY LOSS vs.

E

GATE RESISTANCE

(TYPICAL)

2

10

10

7
5

3
2

1

10

7
5

3
2

RECOVERY LOSS (mJ/pulse)

0

10

3

10

0

57

10

Conditions:

CC

= 600V

V

GE

= ±15V

V

E

= 200A

I

j

= 125°C

T
Inductive load
C snubber at bus

Err

1

23 5723

10

2

EMITTER CURRENT I

E

(A)

GATE RESISTANCE RG (Ω)

Jul. 2004

20

16

MITSUBISHI IGBT MODULES

CM200DY-24A

HIGH POWER SWITCHING USE

GATE CHARGE

CHARACTERISTICS

(TYPICAL)

IC = 200A

VCC = 400V

12

8

4

GATE-EMITTER VOLTAGE VGE (V)

0

0 800400 1200600200 14001000

GATE CHARGE QG (nC)

VCC = 600V

Jul. 2004