Mitsubishi Electric Corporation Semiconductor Group CM200DU-24H Datasheet
T
Measured
C
Point
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
D
S(4 - Mounting
Holes)
F
B
E
CM
T
3 - M6 Nuts
C
Q
K K K
QN
E2
U
P
R
C1C2E1
H
J
H
M
L
G2
E2
E1
G1
G
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system
assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.25 108.0
B 2.44 62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D 3.66±0.01 93.0±0.25
E 1.88±0.01 48.0±0.25
F 0.87 22.0
G 0.16 4.0
H 0.24 6.0
J 0.59 15.0
Dimensions Inches Millimeters
K 0.71 18.0
L 0.87 22.0
M 0.33 8.5
N 0.10 2.5
P 0.85 21.5
Q 0.98 25.0
R 0.11 2.8
S 0.25 Dia. 6.5 Dia.
T 0.6 15.15
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM200DU-24H is a
1200V (V
), 200 Ampere Dual
CES
IGBT Module.
Type Amperes Volts (x 50)
Current Rating V
CM 200 24
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM200DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM200DU-24H Units
Junction Temperature T
Storage Temperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (Tc = 25°C) I
Peak Collector Current (Tj ≤ 150°C) I
Emitter Current** (Tc = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (Tc = 25°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M6 Main Terminal – 3.5~4.5 N · m
Mounting Torque, M6 Mounting – 3.5~4.5 N · m
Weight – 400 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
iso
-40 to 150 °C
-40 to 125 °C
1200 Volts
±20 Volts
200 Amperes
400* Amperes
200 Amperes
400* Amperes
1130 Watts
2500 Vrms
rating.
j(max)
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Voltage I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 20mA, VCE = 10V 4.5 6 7.5 Volts
IC = 200A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts
IC = 200A, VGE = 15V, Tj = 125°C – 2.85 – Volts
Total Gate Charge Q
Emitter-Collector Voltage* V
* Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
G
EC
VCC = 600V, IC = 200A, VGE = 15V – 750 – nC
IE = 200A, VGE = 0V – – 3.2 Volts
rating.
j(max)
Dynamic Electrical Characteristics, TTj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switch Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VCE = 10V, VGE = 0V – – 10.5 nF
VCC = 600V, IC = 200A, – – 200 ns
V
= V
GE1
= 15V, – – 300 ns
GE2
RG = 1.6Ω, Resistive – – 300 ns
Load Switching Operation – – 350 ns
IE = 200A, diE/dt = -400A/µs – – 300 ns
IE = 200A, diE/dt = -400A/µs – 1.1 – µC
––30nF
––6nF
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
Q Per IGBT 1/2 Module – – 0.11 °C/W
th(j-c)
D Per FWDi 1/2 Module – – 0.18 °C/W
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – 0.020 – °C/W
Sep.1998
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