Mitsubishi Electric Corporation Semiconductor Group CM200DU-24F Datasheet

CM200DU-24F

MITSUBISHI IGBT MODULES

CM200DU-24F

HIGH POWER SWITCHING USE

¡IC...................................................................200A

CES ......................................................... 1200V

¡V
¡Insulated Type
¡2-elements in a pack

APPLICATION

General purpose inverters & Servo controls, etc

OUTLINE DRAWING & CIRCUIT DIAGRAM

Tc measured point

G2
E2

E1
G1

C1

4

2.8

14 14 14

CM

C2E1

25 2.521.525

3-M6 NUTS

4-φ6. 5 MOUNTING HOLES

18 7 18 7 18

93

108

±0.25

E2

Dimensions in mm

RTC

6156

±0.25

48

62

C2E1

E2

RTC

G2E2

C1

E1
G1

CIRCUIT DIAGRAM

0.5 0.5

0.5

0.5

+1.0

29

–0.5

LABEL

7.5

8.5

22

4

Aug. 1999

MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM200DU-24F

HIGH POWER SWITCHING USE

Symbol Parameter

CES

V
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Torque strength

—

Weight

ELECTRICAL CHARACTERISTICS

Symbol

ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi).

1 : Tc measured point is indicated in OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter saturation voltage

Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Parameter

*1

j) should not increase beyond 150°C.

G-E Short
C-E Short

C = 25°C

T
Pulse (Note 2)

C = 25°C

T
Pulse (Note 2)

C = 25°C

T

Main terminal to base plate, AC 1 min.
Main Terminal M6
Mounting holes M6
Typical value

(Tj = 25°C)

VCE = VCES, VGE = 0V

C = 20mA, VCE = 10V

I
V

GE = VCES, VCE = 0V
j = 25°C

T

j = 125°C

T
V

CE = 10V
GE = 0V

V

CC = 600V, IC = 200A, VGE = 15V

V

V

CC = 600V, IC = 200A
GE1 = VGE2 = 15V

V

G = 1.6Ω, Inductive load switching operation

R

E = 200A

I

I

E = 200A, VGE = 0V

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compoundapplied
Tc measured point is just under the chips

Conditions UnitRatings

Test conditions

Min. Max.

—

57

—

I

C = 200A, VGE = 15V

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

*2

(1/2 module)

—
—

1.6

j) does not exceed Tjmax rating.

1200

±20
200
400
200
400

830
–40 ~ +150
–40 ~ +125

2500

3.5 ~ 4.5

3.5 ~ 4.5
400

Limits

T yp.

—

1

V
V

A

A

W

°C
°C

V
N • m
N • m

g

Unit

mA

6V

—

1.8

1.9
—
—
—

2200

—
—
—
—
—

12.2
—
—
—

0.04
—
—

40

2.4
—
78

3.4

2.0
—

300

80

500
300
200

—

3.2

0.15

0.18
—

0.091
16

µA

V

nF

nC

ns

ns

µC

V

°C/W

✽3

Ω

Aug. 1999