CM200DU-12NFH
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
¡IC...................................................................200A
¡V
CES ............................................................600V
¡Insulated Type
¡2-elements in a pack
APPLICATION
High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
TC measured point
94
2.5
80
±0.25
E2
25
23
C1
12 13.5
2.5
2–φ6.5
MOUNTING HOLES
114418
13
G1E1 E2G2
TAB #110. t=0.5
4
24
48
3–M5NUTS
12mm deep
7
17 23
CM
C2E1
16 16
G2E2E1G1
+1
–0.5
30
LABEL
21.2 7.5
C2E1
E2
CIRCUIT DIAGRAM
C1
Feb.2004
MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
PC’ (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
—
G-E Short
C-E Short
Operation
Pulse (Note 2)
Operation
Pulse (Note 2)
T
C = 25°C
T
C’ = 25°C
*4
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value
Conditions UnitRatings
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
ICES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
Rth(j-c’)Q
G
R
1 : TC measured point is shown in page OUTLINE DRAWING.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
3 : If you use this value, Rth(f-a) should be measured just under the chips.
*
4 : TC’ measured point is just under the chips.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
Thermal resistance
External gate resistance
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. No short circuit capability is designed.
Parameter
VCE = VCES, VGE = 0V
I
C = 20mA, VCE = 10V
V
GE = VGES, VCE = 0V
T
j = 25°C
T
j = 125°C
CE = 10V
V
V
GE = 0V
CC = 300V, IC = 200A, VGE = 15V
V
V
CC = 300V, IC = 200A
V
GE1 = VGE2 = 15V
R
G = 6.3Ω, Inductive load switching operation
I
E = 200A
E = 200A, VGE = 0V
I
*1
IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips (1/2 module)
j) should not increase beyond 150°C.
Test conditions
I
C = 200A, VGE = 15V
j) does not exceed Tjmax rating.
*2
(1/2 module)
600
±20
200
400
200
400
590
830
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
3.5 ~ 4.5
310
Limits
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.1
Typ.
—
57
6V
—
2.0
1.95
—
—
—
1240
—
—
—
—
—
3.5
—
—
—
0.07
—
—
1
0.5
2.7
—
55
3.6
2.0
—
250
150
500
150
150
—
2.6
0.21
0.35
—
0.15
31
V
V
A
A
A
A
W
W
°C
°C
V
N • m
N • m
g
Unit
mA
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
*3
°C/W
Ω
Feb.2004
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
400
350
(A)
C
300
250
200
V
GE
20V
15
(TYPICAL)
11
13
=
8.5
10
9.5
9
8
Tj = 25°C
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
(V)
2.5
CE (sat)
1.5
VOLTAGE CHARACTERISTICS
3
V
GE
2
(TYPICAL)
= 15V
150
100
50
COLLECTOR CURRENT I
0
02345
1 1.5 2.5 3.5 4.50.5
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
(V)
4.5
4
CE (sat)
3.5
3
2.5
2
1.5
COLLECTOR-EMITTER
1
0.5
SATURATION VOLTAGE V
0
GATE-EMITTER VOLTAGE V
7.5
7
Tj = 25°C
IC = 400A
IC = 200A
IC = 80A
GE
(V)
CE
2012 146 8 10 16 18
(V)
1
COLLECTOR-EMITTER
0.5
SATURATION VOLTAGE V
0
0 50 100 150 200 250 300 350 400
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
10
0 0.5 1 1.5 2 2.5 3
(TYPICAL)
EMITTER-COLLECTOR VOLTAGE V
Tj = 25°C
j
= 125°C
T
Tj = 25°C
j
= 125°C
T
EC
(V)
CAPACITANCE–V
CHARACTERISTICS
2
10
7
5
(nF)
3
res
2
, C
1
10
oes
7
, C
5
ies
3
2
0
10
7
5
3
2
CAPACITANCE C
10
V
GE
–1
–1
10
2
(TYPICAL)
= 0V
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
10
CE
1
C
ies
C
oes
C
res
357
CE
10
(V)
SWITCHING CHARACTERISTICS
HALF-BRIDGE
3
10
7
5
3
2
2
10
7
5
3
SWITCHING TIME (ns)
2
1
2
10
10
1
(TYPICAL)
2
10
57
t
d(off)
t
d(on)
t
f
t
r
Conditions:
V
CC
= 300V
GE
= ±15V
V
G
= 6.3Ω
R
j
= 125°C
T
Inductive load
23 5723
10
3
COLLECTOR CURRENT IC (A)
Feb.2004
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
rr (A)
7
5
3
2
2
10
7
trr
5
Irr
3
2
REVERSE RECOVERY TIME trr (ns)
1
10
REVERSE RECOVERY CURRENT l
1
10
(TYPICAL)
Conditions:
V
V
R
T
Inductive load
2
23 57 10
10
23 57
EMITTER CURRENT I
CC = 300V
GE = ±15V
G = 6.3Ω
j = 25°C
E (A)
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
–3
23 57 23 57 2 3 57 2 3 57
10
0
10
7
5
3
th (j–c)
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
Per unit base =
THERMAL IMPEDANCE Z
2
R
th(j–c)
–3
3
10
(IGBT part )
–2
10
= 0.21°C/W
–1
10
–5
23 57 23 57
10
TIME (s)
0
10
Single Pulse
T
C = 25°C
–4
10
10
10
10
10
10
1
–1
7
5
3
2
–2
7
5
3
2
–3
–3
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
–3
10
0
10
7
5
3
th (j–c)
2
–1
10
7
5
3
2
–2
10
7
5
NORMALIZED TRANSIENT
3
Per unit base =
THERMAL IMPEDANCE Z
2
R
–3
10
–2
23 57 23 57 2 3 57 2 3 57
10
th(j–c)
= 0.35°C/W
–1
10
–5
23 57 23 57
10
TIME (s)
0
10
Single Pulse
T
C = 25°C
–4
10
10
10
10
10
10
GATE CHARGE
CHARACTERISTICS
400
(TYPICAL)
VCC = 200V
800
600
VCC = 300V
1200 1600
1400 18001000
1
20
IC = 200A
16
–1
7
5
3
2
–2
7
5
3
2
–3
–3
GATE-EMITTER VOLTAGE VGE (V)
12
8
4
0
0
200
GATE CHARGE QG (nC)
Feb.2004
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