MITSUBISHI CM200DU-12NFH User Guide

CM200DU-12NFH

MITSUBISHI IGBT MODULES

CM200DU-12NFH

HIGH POWER SWITCHING USE

¡IC...................................................................200A

¡V

CES ............................................................600V

¡Insulated Type
¡2-elements in a pack

APPLICATION

High frequency switching use (30kHz to 60kHz).
Gradient amplifier, Induction heating, power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

TC measured point

94

2.5

80

±0.25

E2

25

23

C1

12 13.5

2.5

2–φ6.5
MOUNTING HOLES

114418

13

G1E1 E2G2

TAB #110. t=0.5

4

24

48

3–M5NUTS
12mm deep

7

17 23

CM

C2E1

16 16

G2E2E1G1

+1

–0.5

30

LABEL

21.2 7.5

C2E1

E2

CIRCUIT DIAGRAM

C1

Feb.2004

MAXIMUM RATINGS (Tj = 25°C)

MITSUBISHI IGBT MODULES

CM200DU-12NFH

HIGH POWER SWITCHING USE

Symbol Parameter

V

CES

VGES
IC
ICM
IE (
IEM (
PC (
PC’ (
Tj
Tstg
Viso

Collector-emitter voltage
Gate-emitter voltage

Collector current

Note 1

)

Emitter current

Note 1

)

Maximum collector dissipation

Note 3

)

Maximum collector dissipation

Note 3

)

Junction temperature
Storage temperature
Isolation voltage

—

Mounting torque

—

Weight

—

G-E Short
C-E Short
Operation
Pulse (Note 2)
Operation
Pulse (Note 2)
T

C = 25°C

T

C’ = 25°C

*4

Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M6
Typical value

Conditions UnitRatings

ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Symbol
ICES
V

GE(th)

IGES
VCE(sat)

Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q

th(j-c)R

R

th(c-f)

R
Rth(j-c’)Q

G

R

1 : TC measured point is shown in page OUTLINE DRAWING.

*

2 : Typical value is measured by using Shin-etsu Silicone “G-746”.

*

3 : If you use this value, Rth(f-a) should be measured just under the chips.

*

4 : TC’ measured point is just under the chips.

*

Note 1. I

Collector cutoff current
Gate-emitter threshold voltage

Gate leakage current
Collector-emitter
saturation voltage (Note 4)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time

Note 1

)

Reverse recovery charge

Note 1

)

Emitter-collector voltage

Note 1

)

Thermal resistance
Contact thermal resistance

Thermal resistance
External gate resistance

E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).

2. Pulse width and repetition rate should be such that the device junction temp. (T

3. Junction temperature (T

4. No short circuit capability is designed.

Parameter

VCE = VCES, VGE = 0V
I

C = 20mA, VCE = 10V

V

GE = VGES, VCE = 0V

T

j = 25°C

T

j = 125°C
CE = 10V

V
V

GE = 0V
CC = 300V, IC = 200A, VGE = 15V

V

V

CC = 300V, IC = 200A

V

GE1 = VGE2 = 15V

R

G = 6.3Ω, Inductive load switching operation

I

E = 200A

E = 200A, VGE = 0V

I

*1

IGBT part (1/2 module)
FWDi part (1/2 module)
Case to fin, Thermal compound Applied
Tc measured point is just under the chips (1/2 module)

j) should not increase beyond 150°C.

Test conditions

I

C = 200A, VGE = 15V

j) does not exceed Tjmax rating.

*2

(1/2 module)

600
±20
200
400
200
400
590

830
–40 ~ +150
–40 ~ +125

2500

2.5 ~ 3.5

3.5 ~ 4.5
310

Limits

Min. Max.

—

—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—

3.1

Typ.

—

57

6V

—

2.0

1.95
—
—
—

1240

—
—
—
—
—

3.5
—
—
—

0.07
—
—

1

0.5

2.7
—
55

3.6

2.0
—

250
150
500
150
150

—

2.6

0.21

0.35
—

0.15
31

V
V
A
A
A

A
W
W

°C
°C

V

N • m
N • m

g

Unit

mA

µA

V

nF
nF
nF
nC

ns
ns
ns
ns
ns

µC

V

°C/W
°C/W
°C/W

*3

°C/W

Ω

Feb.2004