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MITSUBISHI HVIGBT MODULES
CM1800HC-34H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
HIGH POWER SWITCHING USE
CM1800HC-34H
● IC ................................................................ 1800A
● V
CES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack
● AISiC Baseplate
● Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
INSULA TED TYPE
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
190
±0.5
171
3 - M4 NUTS
screwing depth
min. 7.7
CM
57±0.1
C
79.4
±0.3
C
E
G
E
61.5
±0.1
±0.1
57
20.25
41.25
±0.3 ±0.3
57
CC
EE
±0.2
±0.3
61.5
±0.2
13
±0.1
6 - M8 NUTS
+0.1
–0.2
20
±0.1
±0.5
±0.2
40
124
140
±0.1
8 - φ7 MOUNTING HOLES
screwing depth
min. 16.5
±0.2
5.2
+1
0
±0.15
5
+1
0
38
28
C
G
E
C
E
CIRCUIT DIAGRAM
±0.3
40
LABEL
C
E
±0.2
15
C
E
±0.5
29.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Symbol Item Conditions UnitRatings
V
CES
VGES
IC
ICM
IE
IEM
PC
Tj
Top
Tstg
Viso
tpsc
Collector-emitter voltage
Gate-emitter voltage
Collector current
(Note 2)
Emitter current
(Note 2)
Maximum power dissipation
(Note 3)
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
ELECTRICAL CHARACTERISTICS
Symbol
I
CES
GE(th)
V
IGES
VCE(sat)
Cies
Coes
Cres
Qg
VEC
td(on)
tr
Eon
td(off)
tf
Eoff
trr
Qrr
Erec
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
(Note 2)
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
(Note 2)
Reverse recovery time
(Note 2)
Reverse recovery charge
(Note 2)
Reverse recovery energy
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
Item Conditions
j) should not exceed Tjmax rating (150°C).
V
GE = 0V, Tj = 25°C
V
CE = 0V, Tj = 25°C
T
C = 85°C
Pulse (Note 1)
Pulse (Note 1)
T
C = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
V
CC = 1150V, VCES ≤ 1700V, VGE = 15V
T
j = 125°C
VCE = VCES, VGE = 0V, Tj = 25°C
I
C = 180mA, VCE = 10V, Tj = 25°C
V
GE = VGES, VCE = 0V, Tj = 25°C
I
C = 1800A, VGE = 15V, Tj = 25°C (Note 4)
I
C = 1800A, VGE = 15V, Tj = 125°C (Note 4)
CE = 10V, f = 100kHz
V
V
GE = 0V, Tj = 25°C
CC = 850V, IC = 1800A, VGE = 15V, Tj = 25°C
V
I
E = 1800A, VGE = 0V, Tj = 25°C (Note 4)
I
E = 1800A, VGE = 0V, Tj = 125°C (Note 4)
V
CC = 850V, IC = 1800A, VGE = ±15V
R
G(on) = 0.3Ω, Tj = 125°C, Ls = 80nH
Inductive load
V
CC = 850V, IC = 1800A, VGE = ±15V
R
G(off) = 0.3Ω, Tj = 125°C, Ls = 80nH
Inductive load
V
CC = 850V, IC = 1800A, VGE = ±15V
R
G(on) = 0.3Ω, Tj = 125°C, Ls = 80nH
Inductive load
15600
–40 ~ +150
–40 ~ +125
–40 ~ +125
Limits
Min Typ Max
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
INSULATED TYPE
1700
±20
1800
3600
1800
3600
4000
10
—
5.5
—
2.40
2.85
187
26.7
10.1
17.6
2.20
1.70
—
—
590
—
—
670
—
560
260
28
6.5
0.5
3.10
—
—
—
—
—
2.80
—
1.60
1.30
—
2.70
0.80
—
2.70
—
—
mJ/pulse
mJ/pulse
mJ/pulse
V
V
A
A
A
A
W
°C
°C
°C
V
µs
Unit
mA
V
µA
V
nF
nF
nF
µC
V
µs
µs
µs
µs
µs
µC
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 3
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
THERMAL CHARACTERISTICS
Symbol
th(j-c)Q
R
Rth(j-c)R
Rth(c-f)
Thermal resistance
Contact thermal resistance
MECHANICAL CHARACTERISTICS
Symbol
M
CTI
d
a
d
s
L
C-E(int)
Mounting torque
Mass
—
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Item Conditions
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λ
Item Conditions
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
grease = 1W/m·K
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
Limits
Min Typ Max
—
—
—
Min Typ Max
7.0
3.0
1.0
—
600
19.5
32.0
—
—
—
7.0
Limits
—
—
—
1.5
—
—
—
10
13.0
13.0
8.0
—
6.0
2.0
—
—
—
—
—
Unit
K/kW
K/kW
K/kW
Unit
N·m
kg
—
mm
mm
nH
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
Page 4
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
3600
T
j
= 25°C
3000
V
GE
)
A
(
= 20V
2400
1800
1200
COLLECTOR CURRENT
600
0
COLLECTOR-EMITTER VOLTAGE (V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
5
)
V
V
GE
(
= 15V
(
TYPICAL
)
V
GE
= 15V
V
GE
= 12V
V
GE
= 10V
V
GE
= 8V
3 4210 56
)
(
TYPICAL
)
TRANSFER CHARACTERISTICS
3600
V
CE
= 10V
3000
)
A
(
2400
1800
1200
COLLECTOR CURRENT
600
T
j
= 25°C
T
j
0
= 125°C
GATE-EMITTER VOLTAGE (V
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
5
(
TYPICAL
)
6 8420 10 12
(
TYPICAL
)
)
4
3
2
1
T
j
= 25°C
T
j
COLLECTOR-EMITTER SATURATION VOLTAGE
0
1800 240012006000 3000 3600
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
= 125°C
)
)
V
(
4
3
2
1
EMITTER-COLLECTOR VOLTAGE
0
1800 240012006000 3000 3600
EMITTER CURRENT (A
T
j
= 25°C
T
j
= 125°C
)
Jul. 2005
Page 5
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
CAPACITANCE CHARACTERISTICS
3
10
V
GE
7
f = 100kHz
5
3
2
)
2
10
nF
(
7
5
3
2
1
10
CAPACITANCE
7
5
3
2
0
10
-1
23 57
10
COLLECTOR-EMITTER VOLTAGE (V
SWITCHING ENERGY CHARACTERISTICS
2000
V
CC
R
G(on)
T
j
)
1600
= 125°C, Inductive load
= 0V, T
j
= 850V, V
= R
G(off)
(
TYPICAL
)
= 25°C
0
23 57 23 57
10
10
HALF-BRIDGE
(
TYPICAL
GE
= ±15V
)
= 0.3Ω
GATE CHARGE CHARACTERISTICS
(
TYPICAL
)
20
CC
= 850V, IC = 1800A
V
T
j
= 25°C
C
ies
16
)
V
(
12
C
oes
C
res
1
10
2
)
8
GATE-EMITTER VOLTAGE
4
0
10 15502025
GATE CHARGE
(µC)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(
TYPICAL
)
3000
V
CC
E
on
2500
)
= 850V, IC = 1800A
V
GE
= ±15V
T
j
= 125°C, Inductive load
E
on
J/pulse
(m
1200
E
off
800
400
SWITCHING ENERGIES
0
1800 240012006000 3000 3600
COLLECTOR CURRENT (A
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
E
rec
)
J/pulse
2000
(m
1500
1000
SWITCHING ENERGIES
500
0
GATE RESISTANCE
E
off
E
rec
1.5 210.50 2.5
(Ω)
Jul. 2005
Page 6
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1800HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME CHARACTERISTICS
1
10
CC
= 850V, V
V
7
R
G(on)
5
3
2
)
µs
0
10
(
7
5
3
2
-1
10
SWITCHING TIMES
7
5
3
2
-2
10
10
= R
j
= 125°C, Inductive load
T
t
t
1
23 57
COLLECTOR CURRENT (A
HALF-BRIDGE
(
TYPICAL
GE
= ±15V
G(off)
= 0.3Ω
d(off)
d(on)
t
f
t
r
2
10
)
3
23 57 23 57
10
)
10
REVERSE RECOVERY CHARACTERISTICS
2
10
CC
= 850V, V
V
7
R
G(on)
5
3
)
2
µs
(
1
10
7
5
3
2
0
10
7
5
REVERSE RECOVERY TIME
3
2
-1
4
10
10
= R
T
j
= 125°C, Inductive load
1
23 57
G(off)
l
rr
rr
t
10
(
TYPICAL
GE
= ±15V
= 0.3Ω
2
)
3
23 57 23 57
10
EMITTER CURRENT (A
4
10
7
5
)
A
3
(
2
3
10
7
5
3
2
2
10
7
5
REVERSE RECOVERY CURRENT
3
2
1
10
4
10
)
FREE-WHEEL DIODE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
1.2
Single Pulse, T
th(j–c)Q
R
R
th(j–c)R
1.0
C
= 8K/kW
= 13K/kW
= 25°C
0.8
0.6
0.4
0.2
NORMALIZED TRANSIENT THERMAL IMPEDANCE
0
10
-3
23 57
-2
10
23 57 23 57 23 57
-1
10
TIME (s
10
)
0
10
REVERSE BIAS SAFE OPERATING AREA
(
RBSOA
)
5000
V
CC
)
A
(
4000
≤ 1150V, V
T
j
= 125°C, R
G(off)
GE
= +/-15V
≥ 0.3Ω
3000
2000
COLLECTOR CURRENT
1000
1
0
COLLECTOR-EMITTER VOLTAGE (V
150010005000 2000
)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
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