Mitsubishi Electric Corporation Semiconductor Group CM15TF-12H Datasheet
MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
A
B
LKK
GuP
SuP GvP SvP GwP SwP
P
D
H
N
GuN GvN GwNSuN SvN SwN
Q
S
C
TAB #110, t = 0.5
G
N
P
GuP
(EuP)
U
GuN
(EuN) (EvN) (EwN)
N
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.54 90.0
B 2.99±0.01 76.0±0.2
C 2.52 64.0
D 1.54 39.0
E 0.98 25.0
F 0.90 23.0
G 0.87 22.0
H 0.75 19.0
J 0.71 18.0
GvP
(EvP)
VW
GvN
Dimensions Inches Millimeters
M
WVU
Q
P
SS
TAB #250, t = 0.8
GwP
(EwP)
GwN
K 0.67 17.0
L 0.63 16.0
M 0.59 15.0
N 0.56 14.1
P 0.51 13.0
Q 0.43 11.0
R 0.26 6.5
S 0.24 6.0
T 0.22 Dia. Dia. 5.5
T - DIA.
(2 TYP.)
E
J
F
R
Description:
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six
IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super-fast
recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features:
u Low Drive Power
u Low V
CE(sat)
u Discrete Super-Fast Recovery
Free-Wheel Diode
u High Frequency Operation
u Isolated Baseplate for Easy
Heat Sinking
Applications:
u AC Motor Control
u Motion/Servo Control
u UPS
u Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM15TF-12H
is a 600V (V
), 15 Ampere
CES
Six-IGBT Module.
Type Current Rating V
Amperes Volts (x 50)
CM 15 12
CES
Sep.1998
MITSUBISHI IGBT MODULES
CM15TF-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM15TF-12H Units
Junction Temperature T
Storage T emperature T
Collector-Emitter Voltage (G-E SHORT) V
Gate-Emitter Voltage (C-E SHORT) V
Collector Current (TC = 25°C) I
Peak Collector Current I
Emitter Current** (TC = 25°C) I
Peak Emitter Current** I
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P
j
stg
CES
GES
C
CM
E
EM
c
Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m
Weight – 150 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
j(max)
iso
rating.
–40 to +150 °C
–40 to +125 °C
600 Volts
±20 Volts
15 Amperes
30* Amperes
15 Amperes
30* Amperes
100 Watts
2500 Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current I
Gate Leakage Current I
Gate-Emitter Threshold Voltage V
Collector-Emitter Saturation Voltage V
CES
GES
GE(th)
CE(sat)
VCE = V
VGE = V
, VGE = 0V – – 1.0 mA
CES
, VCE = 0V – – 0.5 µA
GES
IC = 1.5mA, VCE = 10V 4.5 6.0 7.5 Volts
IC = 15A, VGE = 15V – 2.1 2.8** Volts
IC = 15A, VGE = 15V, Tj = 150°C – 2.15 – Volts
Total Gate Charge Q
Emitter-Collector Voltage V
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
G
EC
VCC = 300V, IC = 15A, VGE = 15V – 45 – nC
IE = 15A, VGE = 0V – – 2.8 Volts
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Resistive Turn-on Delay Time t
Load Rise Time t
Switching Turn-off Delay Time t
Times Fall Time t
Diode Reverse Recovery Time t
Diode Reverse Recovery Charge Q
ies
oes
res
d(on)
r
d(off)
f
rr
rr
VGE = 0V, VCE = 10V – – 0.5 nF
VCC = 300V, IC = 15A, – – 300 ns
V
= V
GE1
= 15V, RG = 42Ω – – 200 ns
GE2
IE = 15A, diE/dt = –30A/µs – – 110 ns
IE = 15A, diE/dt = –30A/µs – 0.04 – µC
– – 1.5 nF
– – 0.3 nF
– – 120 ns
– – 300 ns
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case R
Thermal Resistance, Junction to Case R
Contact Thermal Resistance R
th(j-c)
th(j-c)
th(c-f)
Per Module, Thermal Grease Applied – – 0.092 °C/W
Per IGBT – – 1.30 °C/W
Per FWDi – – 3.50 °C/W
Sep.1998
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