MITSUBISHI CM150TX-24S User Manual

 



MITSUBISHI IGBT MODULES



CM150TX-24S

- 6th Generation NX series -

Collector current IC .............…............…

Collector-emitter voltage V

Maximum junction temperature T

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant

sixpack (3φ inverter)

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION

●UL Recognized under UL1557, File E323585

CM150TX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

°C

...........…

CES

jmax

150

1200

...

175

Dimension in mm

TERMINAL

(54~56)

N(59~61)

INTERNAL CONNECTION

P1(28~30)

GUP(1)

EsUP(2)

GUN(5)

EsUN(6) EsVN(14) EsW N(22)

Caution: Each (three) pin terminal of P/N/P1/N1/U/V/W is connected in the module,

but should use all each three pins for the external wiring.

GVP(9)

EsVP(10 )

U(48~50)

GVN(13)

GWP(17)

EsWP(18)

V(42~44)

GW N( 21 )

W(36~38)

NTC

N1(23~ 25)

TH1(31)

TH2(32)

t=0.8

SECTION A

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

The tolerance of size between terminals is assumed to be ±0.4.



Feb. 2011



MITSUBISHI IGBT MODULES

CM150TX-24S

HIGH POWER SWITCHING USE



INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

Inverter part IGBT/FWDi

Symbol Item Conditions Rating Unit

Collector-emitter voltage G-E short-circuited 1200 V

CES

Gate-emitter voltage C-E short-circuited ±20 V

GES

IC DC, TC=120 °C

CRM

Total power dissipation TC=25 °C

tot

ERM

(Note.1)

Collector current

Emitter current

Pulse, Repetitive

TC=25 °C

Pulse, Repetitive

(Note.2)

150

(Note.3)

(Note.2, 4)

300

1150 W

150

(Note.3)

300

Module

Symbol Item Conditions Rating Unit

Maximum junction temperature - 175

jmax

Maximum case temperature

Cmax

Operating junction temperature - -40 ~ +150

jop

Storage temperature - -40 ~ +125

stg

Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

isol

(Note.2)

125

°C

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)

Inverter part IGBT/FWDi

Symbol Item Conditions

Collector-emitter cut-off current VCE=V

CES

Gate-emitter leakage current VGE=V

GES

Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

CEsat

(Terminal)

CEsat

(Chip)

Input capacitance - - 15

ies

oes

res

Collector-emitter saturation voltage

Output capacitance - - 3.0

Reverse transfer capacitance

, G-E short-circuited - - 1 mA

CES

, C-E short-circuited - - 0.5 μA

GES

=150 A

(Note.5)

=15 V

(Note.5)

=15 V

=10 V, G-E short-circuited

Tj=25 °C - 1.80 2.25

Tj=125 °C - 2.00 -

=150 °C - 2.05 -

Tj=25 °C - 1.70 2.15

Tj=125 °C - 1.90 -

=150 °C - 1.95 -

Min. Typ. Max.

- - 0.25

QG Gate charge VCC=600 V, IC=150 A, VGE=15 V - 350 - nC

Turn-on delay time - - 800

d(on)

tr Rise time

Turn-off delay time - - 600

d(off)

tf Fall time

(Note.1)

VEC

(Terminal)

VEC

(Chip)

(Note.1)

Qrr

Emitter-collector voltage

(Note.1)

Emitter-collector voltage

Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns

Reverse recovery charge RG=0 Ω, Inductive load - 8.0 - μC

=600 V, IC=150 A, VGE=±15 V,

=0 Ω, Inductive load

=150 A

G-E short-circuited

=150 A

G-E short-circuited

(Note.5)

Tj=125 °C - 1.8 -

Tj=125 °C - 1.7 -

- - 200

- - 300

Tj=25 °C - 1.8 2.25

=150 °C - 1.8 -

Tj=25 °C - 1.7 2.15

=150 °C - 1.7 -

Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 24.2 -

Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 16.0 -

off

(Note.1)

Err

Reverse recovery energy per pulse Inductive load - 12.2 -

Internal lead resistance

CC'+EE'

Main terminals-chip, per switch,

=25 °C

(Note.2)

- - 1.8 mΩ

rg Internal gate resistance Per switch - 13 - Ω

Limits

Unit

Feb. 2011



MITSUBISHI IGBT MODULES

CM150TX-24S

HIGH POWER SWITCHING USE



INSULATED TYPE

ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)

NTC thermistor part

Symbol Item Conditions

R25 Zero-power resistance TC=25 °C

ΔR/R Deviation of resistance TC=100 °C, R

B-constant Approximate by equation

(25/50)

P25 Power dissipation TC=25 °C

(Note.2)

4.85 5.00 5.15 kΩ

=493 Ω -7.3 - +7.8 %

100

(Note.2)

- - 10 mW

(Note.6)

- 3375 - K

Min. Typ. Max.

Limits

Unit

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

Junction to case, per IGBT - - 0.13 K/W

th(j-c)Q

th(j-c)D

th(c-s)

Thermal resistance

Contact thermal resistance

(Note.2)

Junction to case, per FWDi - - 0.23 K/W

Case to heat sink, per 1 module, Thermal grease applied

(Note.7)

Min. Typ. Max.

- 15 - K/kW

Limits

Unit

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Min. Typ. Max.

Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m

ds Creepage distance

da Clearance

Terminal to terminal 10.28 - -

Terminal to base plate 14.27 - -

Terminal to terminal 10.28 - -

Terminal to base plate 12.33 - -

m Weight - - 300 - g

ec Flatness of base plate On the centerline X, Y

(Note.8)

±0 - +100 μm

Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (T

) and heat sink temperature (Ts) are defined on the each surface (mounting side) of base plate

and heat sink just under the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips. Note.3: Pulse width and repetition rate should be such that the device junction temperature (T Note.4: Junction temperature (T

) should not increase beyond T

jmax

rating.

Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.

Note.6:

Refer to the figure of test circuit for V

/()

ln(B

)/(

5025

: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]

−= TT

502550

)

CEsat

, VEC.

Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

mounting side

-:Concave

mounting side

+:Convex

-:Concave X

Limits

) dose not exceed T

jmax

Unit

rating.

mounting side

+:Convex

Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,

"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"

Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.

"M2.6×10 or M2.6×12 self tapping screw" The length of the screw depends on the thickness of the PCB.

Feb. 2011

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