MITSUBISHI CM150TL-24NF User Manual
CM150TL-24NF
MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
¡IC...................................................................150A
¡V
CES ......................................................... 1200V
¡Insulated Type
¡6-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
(6.05)
18
48.75
MOUNTING HOLES
4-φ5.5
26.5
(13)
13.75
4
10.5
18
CN
1
WP VP UP
46.3
135
110
±0.5
262617.5
10.5 10.5
VW
11
U
A
B
2530.5 25
LABEL
(6.05)
Dimensions in mm
11.7
18.7
BNP
10.5
10.510.5
(13)
11
13
110
202016.5
±0.5
78
(6.05) (6.05)
6-M5 NUTS
+1
–0.5
24.1
(SCREWING DEPTH)
CN-7
CN-8
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
UP-1
UP-2
NC
BU
NC
CN-5
CN-6
NC
N
VP-1
VP-2
CN-3
CN-4
V
CIRCUIT DIAGRAM
WP-1
WP-2
CN-1
CN-2
W
Jun. 2004
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM150TL-24NF
HIGH POWER SWITCHING USE
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
—
G-E Short
C-E Short
DC, T
C = 76°C
Pulse (Note 2)
Pulse (Note 2)
T
C = 25°C
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Conditions UnitRatings
*1
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
RG
1 : Tc measured point is just under the chips.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
External gate resistance
If you use this value, R
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Parameter
CE = VCES, VGE = 0V
V
I
C = 15mA, VCE = 10V
V
GE = VGES, VCE = 0V
I
C = 150A, VGE = 15V
CE = 10V
V
V
GE = 0V
CC = 600V, IC = 150A, VGE = 15V
V
V
CC = 600V, IC = 150A
V
GE1 = VGE2 = 15V
R
G = 2.1Ω, Inductive load switching operation
I
E = 150A
E = 150A, VGE = 0V
I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compound Applied (1/6 module)
th(f-a) should be measured just under the chips.
j) should not increase beyond 150°C.
Test conditions
j = 25°C
T
T
j = 125°C
*1
*1
j) does not exceed Tjmax rating.
1200
±20
150
300
150
300
890
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
750
Limits
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
*2
—
2.1
Typ.
—
68
7V
—
2.1
2.4
—
—
—
675
—
—
—
—
—
5.8
—
—
—
0.051
—
1
0.5
3.0
—
23
2
0.45
—
130
70
400
350
150
—
3.8
0.14
0.23
—
31
V
V
A
A
A
A
W
°C
°C
V
N • m
N • m
g
Unit
mA
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Ω
Jun. 2004
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