CM150TL-12NF
MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
¡IC...................................................................150A
¡V
CES ............................................................600V
¡Insulated Type
¡6-elements in a pack
APPLICATION
AC drive inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
LABEL
12011
106
±0.5
17 1740.78
UPVPWP
AB
UVW
12 12
23 23 23
12
35
6-M5 NUTS
+1
–0.5
22
7
13.62
12
NP
12
10.75
(19.75)
12
(SCREWING DEPTH)
CN
81111
B
12
22
2-φ5.5
MOUNTING HOLES
55
32
(13.5)
11.75
23.2
16
3
Housing Type of A and B
(J.S.T.Mfg.Co.Ltd)
A = B8P-VH-FB-B, B = B2P-VH-FB-B
P
UP-1
UP-2
NC
BU
NC
CN-7
CN-8
CN-5
CN-6
NC
N
CIRCUIT DIAGRAM
VP-1
VP-2
CN-3
CN-4
Dimensions in mm
WP-1
WP-2
V
CN-1
CN-2
W
Jun. 2004
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
Symbol Parameter
V
CES
VGES
IC
ICM
IE (
IEM (
PC (
Tj
Tstg
Viso
Collector-emitter voltage
Gate-emitter voltage
Collector current
Note 1
)
Emitter current
Note 1
)
Maximum collector dissipation
Note 3
)
Junction temperature
Storage temperature
Isolation voltage
—
Torque strength
—
Weight
—
G-E Short
C-E Short
DC, T
C = 93°C
Pulse (Note 2)
Pulse (Note 2)
T
C = 25°C
Main Terminal to base plate, AC 1 min.
Main Terminal M5
Mounting holes M5
Typical value
Conditions UnitRatings
*1
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
I
CES
V
GE(th)
IGES
VCE(sat)
Cies
Coes
Cres
QG
td(on)
tr
td(off)
tf
trr (
Qrr (
VEC(
Rth(j-c)Q
th(j-c)R
R
th(c-f)
R
RG
1 : Tc measured point is just under the chips.
*
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
*
Note 1. I
Collector cutoff current
Gate-emitter threshold voltage
Gate leakage current
Collector-emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Note 1
)
Reverse recovery charge
Note 1
)
Emitter-collector voltage
Note 1
)
Thermal resistance
Contact thermal resistance
External gate resistance
If you use this value, R
E, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (T
3. Junction temperature (T
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Parameter
V
CE = VCES, VGE = 0V
I
C = 15mA, VCE = 10V
V
GE = VGES, VCE = 0V
I
C = 150A, VGE = 15V
CE = 10V
V
V
GE = 0V
V
CC = 300V, IC = 150A, VGE = 15V
CC = 300V, IC = 150A
V
V
GE1 = VGE2 = 15V
R
G = 4.2Ω, Inductive load switching operation
I
E = 150A
E = 150A, VGE = 0V
I
IGBT part (1/6 module)
FWDi part (1/6 module)
Case to fin, Thermal compound Applied (1/6 module)
th(f-a) should be measured just under the chips.
j) should not increase beyond 150°C.
Test conditions
Tj = 25°C
T
j = 125°C
*1
*1
j) does not exceed Tjmax rating.
600
±20
150
300
150
300
730
–40 ~ +150
–40 ~ +125
2500
2.5 ~ 3.5
2.5 ~ 3.5
350
Limits
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
*2
—
4.2
Typ.
—
68
7V
—
1.7
1.7
—
—
—
600
—
—
—
—
—
2.5
—
—
—
0.085
—
1
0.5
2.2
—
23
2.8
0.9
—
120
100
300
300
150
—
2.8
0.17
0.31
—
42
V
V
A
A
A
A
W
°C
°C
V
N • m
N • m
g
Unit
mA
µA
V
nF
nF
nF
nC
ns
ns
ns
ns
ns
µC
V
°C/W
°C/W
°C/W
Ω
Jun. 2004
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
300
V
GE
=
20V
250
(A)
C
200
(TYPICAL)
15
13
Tj = 25°C
12
MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
COLLECTOR-EMITTER SATURATION
(V)
CE (sat)
VOLTAGE CHARACTERISTICS
4
V
GE
3
(TYPICAL)
= 15V
150
100
50
COLLECTOR CURRENT I
0
0246810
COLLECTOR-EMITTER VOLTAGE V
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
(V)
8
CE (sat)
6
4
COLLECTOR-EMITTER
2
SATURATION VOLTAGE V
0
8
Tj = 25°C
IC = 150A
IC = 300A
IC = 60A
11
10
CE
2
1
COLLECTOR-EMITTER
9
SATURATION VOLTAGE V
0
0 100 200 30050 150 250
(V)
COLLECTOR CURRENT IC (A)
Tj = 25°C
T
j
= 125°C
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
3
10
7
5
(A)
E
3
2
2
10
7
5
3
EMITTER CURRENT I
2
1
2012 146 8 10 16 18
10
012 435
(TYPICAL)
Tj = 25°C
j
= 125°C
T
GATE-EMITTER VOLTAGE V
CAPACITANCE–V
CHARACTERISTICS
2
10
7
5
(nF)
3
res
2
, C
1
10
oes
7
, C
5
ies
3
2
0
10
7
5
3
2
CAPACITANCE C
10
V
GE
–1
–1
10
2
(TYPICAL)
= 0V
0
10
357 2
357 2
COLLECTOR-EMITTER VOLTAGE V
10
CE
1
GE
(V)
C
ies
C
oes
C
res
357
CE
10
(V)
EMITTER-COLLECTOR VOLTAGE V
EC
(V)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
SWITCHING TIME (ns)
2
1
2
10
10
1
(TYPICAL)
t
2
10
57
t
f
t
d(off)
t
d(on)
Conditions:
V
CC
= 300V
r
GE
= ±15V
V
G
= 4.2Ω
R
j
= 125°C
T
Inductive load
23 5723
10
3
COLLECTOR CURRENT IC (A)
Jun. 2004
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
3
10
(A)
rr
7
(ns)
rr
5
3
2
2
10
7
I
rr
5
t
rr
3
2
REVERSE RECOVERY TIME t
1
10
REVERSE RECOVERY CURRENT l
1
10
(TYPICAL)
23 57
10
2
Conditions:
V
V
R
T
Inductive load
23 57
EMITTER CURRENT I
CC
= 300V
GE
= ±15V
G
= 4.2Ω
j
= 25°C
E
(A)
10
MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10
10
10
10
10
1
–1
7
5
3
2
–2
7
5
3
2
–3
–3
–3
10
0
10
7
5
(ratio)
3
2
th (j–c)
–1
10
7
5
3
2
IGBT part:
–2
10
Per unit base =
7
R
5
NORMALIZED TRANSIENT
3
FWDi part:
3
Per unit base =
2
R
THERMAL IMPEDANCE Z
–3
10
–2
23 57 23 57 23 57 23 57
10
th(j–c)
= 0.17°C/W
th(j–c)
= 0.31°C/W
10
10
–1
–5
0
10
Single Pulse,
C
= 25°C
T
Under the chip
–4
23 57 23 57
10
TIME (s)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
1
10
7
5
3
2
0
10
7
5
3
2
SWITCHING LOSS (mJ/pulse)
–1
10
10
1
57
10
2
COLLECTOR CURRENT I
RECOVERY LOSS vs. I
(TYPICAL)
1
10
7
5
3
2
0
10
7
5
3
2
RECOVERY LOSS (mJ/pulse)
–1
10
10
1
57
10
2
Esw(off)
Esw(on)
Conditions:
CC
V
GE
V
G
= 4.2Ω
R
j
= 125°C
T
= 300V
= ±15V
Inductive load
C snubber at bus
23 5723
C
(A)
E
Err
Conditions:
CC
V
GE
V
G
= 4.2Ω
R
j
= 125°C
T
= 300V
= ±15V
Inductive load
C snubber at bus
23 5723
10
10
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
2
10
Conditions:
7
CC
= 300V
V
5
GE
= ±15V
V
C
= 150A
I
3
T
j
= 125°C
2
Inductive load
C snubber at bus
1
10
Esw(off)
7
5
3
2
SWITCHING LOSS (mJ/pulse)
3
10
Esw(on)
0
0
10
GATE RESISTANCE R
57
10
1
23 5723
G
(Ω)
10
2
RECOVERY LOSS vs.
GATE RESISTANCE
Err
= 300V
= ±15V
(TYPICAL)
1
10
57
2
23 5723
10
1
10
7
5
3
2
0
10
Conditions:
7
V
CC
5
GE
V
E
= 150A
I
3
j
= 125°C
T
2
RECOVERY LOSS (mJ/pulse)
3
Inductive load
C snubber at bus
–1
10
0
10
EMITTER CURRENT I
E
(A)
GATE RESISTANCE R
G
(Ω)
Jun. 2004
GATE CHARGE
CHARACTERISTICS
20
IC = 150A
16
12
8
4
GATE-EMITTER VOLTAGE VGE (V)
0
0 200 400 600 800 1000
0
(TYPICAL)
VCC = 200V
VCC = 300V
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM150TL-12NF
HIGH POWER SWITCHING USE
Jun. 2004
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