MITSUBISHI CM150RX-24S User Manual

CM150RX-24S

- 6th Generation NX series -

MITSUBISHI IGBT MODULES

CM150RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current IC .............…............…

Collector-emitter voltage V

Maximum junction temperature T

●Flat base Type

●Copper base plate (non-plating)

●Tin plating pin terminals

●RoHS Directive compliant

sevenpack (3φ inverter+Brake)

APPLICATION

AC Motor Control, Motion/Servo Control, etc.

OUTLINE DRAWING & INTERNAL CONNECTION

●UL Recognized under UL1557, File E323585

...........…

CES

jmax

150

1200

...

175

Dimension in mm

TERMINAL

°C

P(35)

N(36)

B(4 )

GB(6)

EsB(5)

INTERNAL CONNECTION

GUP(34)

EsUP(33)

GUN(30)

EsUN(29) EsVN(21) EsWN(13)

U(1)

GVP(26)

EsVP(25)

GVN(22)

GWP(18)

EsWP(17)

V(2)

GWN(14)

W(3)

NTC

TH1(11)

TH2(10 )

SECTION A

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

The Tolerance of size between terminals is assumed to be ±0.4.

t=0.8

Apr. 2011

MITSUBISHI IGBT MODULES

CM150RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions Rating Unit

Collector-emitter voltage G-E short-circuited 1200 V

CES

Gate-emitter voltage C-E short-circuited ±20 V

GES

IC DC, TC=120 °C

CRM

Total power dissipation TC=25 °C

tot

ERM

(Note.1)

Collector current

Emitter current

Pulse, Repetitive

TC=25 °C

Pulse, Repetitive

BRAKE PART IGBT/CLAMPDi

Symbol Item Conditions Rating Unit

Collector-emitter voltage G-E short-circuited 1200 V

CES

Gate-emitter voltage C-E short-circuited ±20 V

GES

IC DC, TC=122 °C

CRM

Total power dissipation TC=25 °C

tot

Repetitive peak reverse voltage G-E short-circuited 1200 V

RRM

FRM

Collector current

Forward current

Pulse, Repetitive

TC=25 °C

Pulse, Repetitive

MODULE

Symbol Item Conditions Rating Unit

Maximum junction temperature - 175

jmax

Maximum case temperature

Cmax

Operating junction temperature - -40 ~ +150

jop

Storage temperature - -40 ~ +125

stg

Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

isol

(Note.2)

125

(Note.2)

150

(Note.3)

(Note.2, 4)

300

1150 W

150

(Note.3)

300

(Note.2)

(Note.3)

150

600 W

(Note.3)

150

°C

ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions

Collector-emitter cut-off current VCE=V

CES

Gate-emitter leakage current VGE=V

GES

Gate-emitter threshold voltage IC=15 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

CEsat

(Terminal)

CEsat

(Chip)

ies

oes

res

Collector-emitter saturation voltage

Input capacitance - - 15

Output capacitance - - 3.0

Reverse transfer capacitance

, G-E short-circuited - - 1 mA

CES

, C-E short-circuited - - 0.5 μA

GES

=150 A

(Note.5)

=15 V

(Note.5)

=15 V

=10 V, G-E short-circuited

Tj=25 °C - 1.80 2.25

Tj=125 °C - 2.00 -

=150 °C - 2.05 -

Tj=25 °C - 1.70 2.15

Tj=125 °C - 1.90 -

=150 °C - 1.95 -

Min. Typ. Max.

- - 0.25

QG Gate charge VCC=600 V, IC=150 A, VGE=15 V - 350 - nC

Turn-on delay time - - 800

d(on)

tr Rise time

Turn-off delay time - - 600

d(off)

tf Fall time

(Note.1)

VEC

(Terminal)

VEC

(Chip)

Emitter-collector voltage

(Note.1)

Emitter-collector voltage

=600 V, IC=150 A, VGE=±15 V,

=0 Ω, Inductive load

=150 A

G-E short-circuited

=150 A

G-E short-circuited

(Note.5)

Tj=125 °C - 1.8 -

Tj=125 °C - 1.7 -

- - 200

- - 300

Tj=25 °C - 1.8 2.25

=150 °C - 1.8 -

Tj=25 °C - 1.7 2.15

=150 °C - 1.7 -

Limits

Unit

Apr. 2011

MITSUBISHI IGBT MODULES

CM150RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

ELECTRICAL CHARACTERISTICS (cont.; Tj=25 °C, unless otherwise specified)

INVERTER PART IGBT/FWDi

Symbol Item Conditions

(Note.1)

Qrr

Reverse recovery time VCC=600 V, IE=150 A, VGE=±15 V, - - 300 ns

(Note.1)

Reverse recovery charge RG=0 Ω, Inductive load - 8.0 - μC

Min. Typ. Max.

Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=150 A, - 24.2 -

Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj=150 °C, - 16.0 -

off

(Note.1)

Err

Reverse recovery energy per pulse Inductive load - 12.2 - mJ

Internal lead resistance

CC'+EE'

Main terminals-chip, per switch,

=25 °C

(Note.2)

- - 1.8 mΩ

rg Internal gate resistance Per switch - 13 - Ω

BRAKE PART IGBT/CLAMPDi

Symbol Item Conditions

Collector-emitter cut-off current VCE=V

CES

Gate-emitter leakage current VGE=V

GES

Gate-emitter threshold voltage IC=7.5 mA, VCE=10 V 5.4 6.0 6.6 V

GE(th)

CEsat

(Terminal)

CEsat

(Chip)

ies

oes

res

Collector-emitter saturation voltage

Input capacitance - - 7.5

Output capacitance - - 1.5

Reverse transfer capacitance

IC=75 A

, G-E short-circuited - - 1 mA

CES

, C-E short-circuited - - 0.5 μA

GES

(Note.5)

=75 A

=15 V

=10 V, G-E short-circuited

(Note.5)

Tj=25 °C - 1.80 2.25

Tj=125 °C - 2.00 -

=150 °C - 2.05 -

Tj=25 °C - 1.70 2.15

=125 °C - 1.90 -

Tj=150 °C - 1.95 -

=175 °C - - 2.80

QG Gate charge VCC=600 V, IC=75 A, VGE=15 V - 175 - nC

Turn-on delay time - - 300

d(on)

tr Rise time

Turn-off delay time - - 600

d(off)

tf Fall time

Repetitive peak reverse current VR=V

RRM

(Terminal)

(Chip)

Qrr

Forward voltage

(Note.1)

Reverse recovery time VCC=600 V, IE=75 A, VGE=±15 V, - - 300 ns

(Note.1)

Reverse recovery charge RG=8.2 Ω, Inductive load - 4.0 - μC

=600 V, IC=75 A, VGE=±15 V,

=8.2 Ω, Inductive load

, G-E short-circuited - - 1 mA

RRM

=75 A

(Note.5)

G-E short-circuited

=75 A

(Note.5)

G-E short-circuited

Tj=25 °C - 1.8 2.25

Tj=125 °C - 1.8 -

=150 °C - 1.8 -

Tj=25 °C - 1.7 2.15

Tj=125 °C - 1.7 -

=150 °C - 1.7 -

Eon Turn-on switching energy per pulse VCC=600 V, IC=IF=75 A, - 7.3 -

Turn-off switching energy per pulse VGE=±15 V, RG=8.2 Ω, Tj=150 °C, - 8.0 -

off

(Note.1)

Err

Reverse recovery energy per pulse Inductive load - 6.9 - mJ

rg Internal gate resistance - - 0 - Ω

Min. Typ. Max.

- - 0.13

- - 200

- - 300

NTC THERMISTOR PART

Symbol Item Conditions

R25 Zero-power resistance TC=25 °C

ΔR/R Deviation of resistance TC=100 °C, R

B-constant Approximate by equation

(25/50)

P25 Power dissipation TC=25 °C

(Note.2)

4.85 5.00 5.15 kΩ

=493 Ω -7.3 - +7.8 %

100

(Note.2)

- - 10 mW

(Note.6)

- 3375 - K

Min. Typ. Max.

Limits

Unit

Limits

Unit

Apr. 2011

MITSUBISHI IGBT MODULES

CM150RX-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

THERMAL RESISTANCE CHARACTERISTICS

Symbol Item Conditions

Junction to case, per Inverter IGBT - - 0.13

th(j-c)Q

Junction to case, per Inverter FWDi - - 0.23

th(j-c)D

th(j-c)Q

th(j-c)D

th(c-s)

Thermal resistance

Junction to case, Brake IGBT - - 0.25

Contact thermal resistance

(Note.2)

Junction to case, Brake ClampDi - - 0.40

Case to heat sink, per 1 module, Thermal grease applied

(Note.7)

Min. Typ. Max.

- 15 - K/kW

Limits

Unit

K/W

MECHANICAL CHARACTERISTICS

Symbol Item Conditions

Mt Main terminals M 5 screw 2.5 3.0 3.5

ds Creepage distance

da Clearance

Mounting torque

Mounting to heat sink M 5 screw 2.5 3.0 3.5

Terminal to terminal 10.25 - -

Terminal to base plate 12.32 - -

Terminal to terminal 10.28 - -

Terminal to base plate 10.85 - -

Min. Typ. Max.

m Weight - - 370 - g

ec Flatness of base plate On the centerline X, Y

(Note.8)

±0 - +100 μm

Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (T

) and heat sink temperature (Ts) are defined on the each surface of base plate and heat sink

just under the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips. Note.3: Pulse width and repetition rate should be such that the device junction temperature (T Note.4: Junction temperature (T

) should not increase beyond T

jmax

rating.

Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise.

Note.6:

Refer to the figure of test circuit for V

/()

ln(B

)/(

5025

: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]

: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]



502550

)

, VEC and ClampDi VF.

CEsat

Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

mounting side

-:Concave

mounting side

+:Convex

-:Concave X

Limits

) dose not exceed T

jmax

Unit

N·m

rating.

mounting side

+:Convex

Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards,

"EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)"

Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs.

"M2.6×10 or M2.6×12 self tapping screw" The length of the screw depends on the thickness of the PCB.

RECOMMENDED OPERATING CONDITIONS (Ta=25 °C)

Symbol Item Conditions

Min. Typ. Max.

VCC (DC) Supply voltage Applied across P-N terminals - 600 850 V

Gate (-emitter drive) voltage

GEon

RG External gate resistance Per switch

Applied across GB-EsB /

G*P-Es*P / G*N-Es*N terminals

Inverter part 0 - 30 Ω

13.5 15.0 16.5 V

Brake part 8.2 - 82 Ω

Limits

Unit

Apr. 2011

+ 8 hidden pages

MITSUBISHI CM150RX-24S User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual