MITSUBISHI CM150RL-24NF User Manual

CM600HX-12A

MITSUBISHI IGBT MODULES

CM600HX-12A

HIGH POWER SWITCHING USE

¡IC ...................................................................600A

CES ............................................................ 600V

¡V ¡Single

¡Flatbase Type / Insulated Package /

Copper (non-plating) base plate

¡RoHS Directive compliant

APPLICATION

General purpose Inverters, Servo Amplifiers, Power supply, etc.

OUTLINE DRAWING & CIRCUIT DIAGRAM

(13.5) (13.5)

46

45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

6.5

47

48

A

0

＊18.8

＊15

(7.75)

22

(14) (14)

17

12

66

12

17

＊4.2

(21.14)

3.5

152 137

121.7

±0.5

110

99

94.5

LABEL

＊72.14

＊68.33

4-M6 NUTS

24

±0.5

62

39

57.5

23

22

212019181716151413121110987654321

4-φ5.5 MOUNTING HOLES

(102.25)

＊95

50

(5.4)

+1

-0.5

12.5 17

(SCREWING DEPTH)

0.8

7

13

17

(20.5)

Dimensions in mm

(3)

TERMINAL t = 0.8

12.5

SECTION A

＊Pin positions

with tolerance

1.15

0.65

(7.4)

1.5

1.2

φ4.3

(3.81)

φ2.5 φ2.1

φ0.5

C

(47)

C

(48)

* Use both terminals (C/E) to the external connection.

NTC

TH1

TH2

(1)

(2)G1(15)E1(16)C(22)

CIRCUIT DIAGRAM

(24)

(23)

E

Toleranceotherwisespecified

Division of Dimension

0.5 to 3

over 3 to 6

over 6 to 30

over 30 to 120

over 120 to 400

Tolerance

±0.2

±0.3

±0.5

±0.8

±1.2

Jan. 2009

MITSUBISHI IGBT MODULES

CM600HX-12A

HIGH POWER SWITCHING USE

ABSOLUTE MAXIMUM RATINGS (T

j

= 25°C, unless otherwise specified)

INVERTER PART

Symbol Parameter Conditions Rating Unit

CES

V V

GES

I

C

I

CRM

P

C

I

E (Note.3)

I

ERM(Note.3)

T

j

T

stg

V

iso

Note. 8: The base plate flatness measurement points are in the following figure.

Collector-emitter voltage Gate-emitter voltage

Collector current

Maximum collector dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage

—

Base plate flatness

—

Torque strength

—

Torque strength

—

Weight

Y

+

–

X

Heatsinkside

–

G-E Short C-E Short DC, T

C

= 55°C

Pulse T

C

= 25°C

T

C

= 25°C

Pulse

Terminals to base plate, f = 60Hz, AC 1 minute On the centerilne X, Y Main terminals M6 screw Mounting M5 screw (Typical)

+：convex –：concave

(Note. 1) (Note. 4)

(Note. 1, 5)

(Note. 1) (Note. 4)

(Note. 8)

600 ±20

600 1200 1890

600 1200

–40 ~ +150 –40 ~ +125

2500

±0 ~ +100

3.5 ~ 4.5

2.5 ~ 3.5 330

V

A

W

A

°C

Vrms

μm

N·m

g

+

Heatsinkside

Jan. 2009

2

ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART

Symbol Parameter Conditions

I

CES

V

GE(th)

I

GES

V

CE(sat)

C

ies

C

oes

C

res

Q

G

t

d(on)

t

r

t

d(off)

t

f

t

rr (Note.3)

Q

rr (Note.3)

V

EC(Note.3)

R

lead

R

th(j-c)Q

R

th(j-c)R

R

th(c-f)

R

Gint

R

G

Collector cutoff current Gate-emitter threshold voltage Gate leakage current

Collector-emitter saturation voltage

Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge

Emitter-collector voltage

Module lead resistance Thermal resistance (Junction to case)

(Note. 1) Contact thermal resistance (Case to heat sink)

(Note. 1)

Internal gate resistance

External gate resistance

V

CE

= V

CES

, VGE = 0V

I

C

= 60mA, VCE = 10V

±V

GE

= V

GES

, VCE = 0V

I

C

= 600A, VGE = 15V

C

= 600A, VGE = 15V

I

V

CE

= 10V

V

GE

= 0V

CC

= 300V, IC = 600A, VGE = 15V

V V

CC

= 300V, IC = 600A

V

GE

= ±15V, RG = 1.0Ω

Inductive load

E

= 600A)

(I

E

= 600A, VGE = 0V

I

E

= 600A, VGE = 0V

I Main terminals-chip per IGBT per free wheeling diode

Thermal grease applied

T

C

= 25°C

T

C

= 125°C

(Note. 6)

T

j

= 25°C

T

j

= 125°C

Chip

j

= 25°C

T T

j

= 125°C

Chip

MITSUBISHI IGBT MODULES

CM600HX-12A

HIGH POWER SWITCHING USE

Limits

Min. Typ. Max.

(Note. 6)

(Note. 2)

—

5 — — — — — — — — — — — — — — — — — — — —

—

2.1

4.2 1

—

6

—

1.7

1.9

1.6 — — —

1600

— — — — — 11

2.0

1.95

1.9

0.6 — —

0.03

3 6

—

0.5

2.1 — — 69

2.4 —

700

250

700

600 300

—

2.8 — — —

0.066

0.11

—

3.9

7.8 10

Unit

mA

1 7

V

μA

V

nF

8

nC

ns

μC

V

Ω

m

K/W

Ω

NTC THERMISTOR PART

Symbol Parameter Conditions

R ΔR/R B

(25/50)

P

25

Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)

Zero power resistance Deviation of resistance B constant Power dissipation

2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: I

E, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).

4: Pulse width and repetition rate should be such that the device junction temperature (T 5: Junction temperature (T 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for V

7:

B

(25/50)

R25: resistance at absolute temperature T

50

: resistance at absolute temperature T

R

25

R

= In( )/( )

R

50

j) should not increase beyond 150°C.

1

T

25

50

T

C

= 25°C

T

C

= 100°C, R

100

= 493Ω

Approximate by equation T

C

= 25°C

CE(sat) and VEC)

25

[K]; T

25

= 25 [°C]+273.15 = 298.15 [K]

50

[K]; T

50

= 50 [°C]+273.15 = 323.15 [K]

(Note. 7)

j) dose not exceed Tjmax rating.

Min. Typ. Max.

4.85 –7.3

Limits

5.00 —

—

3375

—

5.15 +7.8

— 10

Unit

kΩ

%

K

mW

Jan. 2009

3

MITSUBISHI IGBT MODULES

CM600HX-12A

HIGH POWER SWITCHING USE

Chip Location (Top view) Dimensions in mm (tolerance: ±1mm)

(152)

(121.7)

(110)

46

45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25

0

(62)

(50)

47

48

0

Tr

Th

77.5

Di

78.6

88.6

24

23

212019181716151413121110987654321

22

Each mark points the center position of each chip. Tr: IGBT, Di: FWDi, Th: NTC thermistor

C

VGE = 0V

IC

V

E

V

C(Cs)

VGE = 15V

G

E(Es)

LABEL SIDE

C(Cs)

G

E(Es)

21.8

35.2

44.2

C

IE

E

0V

VCE(sat) test circuit VEC test circuit

I

10%

E

0A

Irr

t

rr, Qrr

test waveform

trr

t

1/2 ✕ Irr

Qrr = 1/2 ✕ Irr ✕ trr

VGE

0V

–

V

GE

+

V

GE

R

G

V

–

V

GE

Load

VCE

IE

I

VCC+

IC

C

0A

td(on) td(off)

tr

90%

0%

90%

tf

Switching time test circuit and waveforms

Jan. 2009

4

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

1200

V

GE

20V

1000

(A)

C

800

600

400

200

COLLECTOR CURRENT I

0

(TYPICAL) Inverter part

15

=

13

Tj = 25°C

12

11

10

9 8

100 246813579

MITSUBISHI IGBT MODULES

HIGH POWER SWITCHING USE

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

3.5

(V)

3

CE(sat)

2.5

2

1.5

1

COLLECTOR-EMITTER

0.5

SATURATION VOLTAGE V

0

(TYPICAL) Inverter part

V

GE

= 15V

0 200

400 600 800 1000 1200

CM600HX-12A

Tj = 25°C T

j

= 125°C

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL) Inverter part

10

(V)

8

CE(sat)

6

4

COLLECTOR-EMITTER

2

SATURATION VOLTAGE V

0

GATE-EMITTER VOLTAGE VGE (V)

CAPACITANCE CHARACTERISTICS

(TYPICAL) Inverter part

2

10

7 5

3 2

1

10

7 5

3 2

0

10

7

CAPACITANCE (nF)

5

3 2

V

GE

= 0V

–1

10

–1

2

0

10

357 2

Tj = 25°C

IC = 600A

IC = 1200A

IC = 240A

1

10

C

ies

C

oes

C

res

357

206 8 10 12 14 16 18

10

COLLECTOR CURRENT I

C

(A)

FREE WHEELING DIODE

FORWARD CHARACTERISTICS

(TYPICAL) Inverter part

4

10

7 5

3

(A)

2

E

3

10

7 5

3 2

2

10

7 5

EMITTER CURRENT I

3 2

1

10

0 0.5 1 1.5 2 2.5 3 3.5 4

EMITTER-COLLECTOR VOLTAGE V

Tj = 25°C T

j

= 125°C

EC

(V)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL) Inverter part

4

10

7

Conditions:

5

V

CC

= 300V

3

V

GE

= ±15V

2

R

G

= 1Ω

3

T

j

= 125°C

10

7

Inductive load

5

3 2

2

10

7 5

SWITCHING TIME (ns)

3 2

1

10

2

10

1

23 57

t

f

t

r

2

10

t

d(on)

t

d(off)

23 57

10

3

COLLECTOR-EMITTER VOLTAGE VCE (V)

COLLECTOR CURRENT I

C

(A)

Jan. 2009

5

MITSUBISHI IGBT MODULES

CM600HX-12A

HIGH POWER SWITCHING USE

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL) Inverter part

4

10

7

5

3

2

t

57

10

d(on)

t

d(off)

t

r

t

f

1

3

10

7

5

3

SWITCHING TIME (ns)

2

10

0

10

GATE RESISTANCE R

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL) Inverter part

2

10

7

5

3

2

1

10

7

5

3

2

SWITCHING LOSS (mJ/pulse)

0

10

0

10

57

10

E E

E

1

Conditions: V

CC

= 300V

V

GE

= ±15V

I

C

= 600A

T

j

= 125°C

Inductive load

23 5723

G

on

off

Conditions:

rr

V

CC

= 300V

V

GE

= ±15V

I

C

, IE = 600A

T

j

= 125°C

Inductive load

23 5723

(Ω)

10

SWITCHING CHARACTERISTICS

HALF-BRIDGE

(TYPICAL) Inverter part

2

10

Conditions:

7

V

CC

= 300V

5

V

GE

= ±15V

R

G

= 1Ω

3

T

j

= 125°C

2

Inductive load

1

10

7

5

3

2

SWITCHING LOSS (mJ/pulse) l

0

10

2

10

1

57

10

2

23 5723

COLLECTOR CURRENT I

EMITTER CURRENT I

E

off

E

on

E

rr

3

10

C

(A)

E

(A)

REVERSE RECOVERY CHARACTERISTICS

OF FREE WHEELING DIODE

(TYPICAL) Inverter part

3

10

Conditions:

7

V

CC

= 300V

5

V

GE

= ±15V

R

G

= 1Ω

3

T

j

= 25°C

2

Inductive load

(ns)

rr

2

10

(A), t

7

rr

5

3

2

1

10

2

10

1

57

10

2

23 5723

I

rr

t

rr

3

10

GATE RESISTANCE R

GATE CHARGE CHARACTERISTICS

(TYPICAL) Inverter part

20

IC = 600A

(V)

GE

15

VCC = 200V

VCC = 300V

10

5

GATE-EMITTER VOLTAGE V

0

0 500 1000 1500 2000 2500

GATE CHARGE QG (nC)

G

(Ω)

EMITTER CURRENT I

E

(A)

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

10

–4

23 57

10

–3

23 57

10

–2

23 57

th(j–c) th(j–c)

–1

10

23 57

= 0.066K/W = 0.11K/W

0

23 57

10

1

0

10

Single pulse

7 5

T

C

= 25°C

3

th(j–c)

2

–1

10

7 5

3 2

–2

10

7 5

NORMALIZED TRANSIENT

3

THERMAL IMPEDANCE Z

Inverter IGBT part : Per unit base = R

2

Inverter FWDi part : Per unit base = R

–3

10

–5

23 57

10

TIME (s)

Jan. 2009

6

MITSUBISHI CM150RL-24NF User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual