Mitsubishi Electric Corporation Semiconductor Group BCR16HM Datasheet
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16HM
•IT (RMS) ......................................................................16A
DRM ..............................................................400V/600V
•V
FGT !, IRGT !, IRGT # ...........................................30mA
•I
•V
iso........................................................................ 2200V
• UL Recognized: File No. E80276
OUTLINE DRAWING
2
5.0 MIN
23.0MAX
1
φ2.0(T1,T2)
T1 TERMINAL
INDICATION
TRADEMARK
3-φ1.3
TYPE
NAME
VOLTAGE
CLASS
39.2 MAX
20.2 MAX
20.1 MAX
21.6 MAX
30.0±0.2
7.0
8.25
6.35
7.95
1.5
∗
BCR16HM (C TYPE)
1
7.0
2
3
φ1.55(G)
6.35
9.75
LOT No.
Tb TEST POINT
Dimensions
2
1
T
1
TERMINAL
2
TERMINAL
T
TERMINAL
GATE
GATE
TERMINAL
INDICATION
2.6
in mm
2-φ4.2
3
3
22.5 MAX
11 MAX
APPLICATION
Contactless AC switches, light dimmer,
on/off and speed control of small induction motors, on/off control of copier lamps,
microwave ovens
MAXIMUM RATINGS
Symbol
DRM
V
VDSM
Symbol
T (RMS)
I
ITSM
2
t
I
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
—
V
iso
✽1. Gate open.
Parameter
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Parameter
RMS on-state current
Surge on-state current
2
t
for fusing
I
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mounting torque
Weight
Isolation voltage
✽1
8
✽1
Commercial frequency, sine full wave, 360° conduction,
T
b=82°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Screw M4
a=25°C, AC 1 minute, T2 · T1 · G terminal to base
T
400
500
Voltage class
600
720
Conditions
12
Ratings
16
170
121
5
0.5
10
2
–40 ~ +125
–40 ~ +125
15
1.47
26
2200
Unit
V
V
Unit
A
A
2
A
W
W
V
A
°C
°C
kg·cm
N·m
g
V
s
Feb.1999
ELECTRICAL CHARACTERISTICS
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
Symbol
DRM
I
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-b)
(dv/dt)c
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
✽4.The contact thermal resistance R
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Parameter
✽2
✽2
th (b-f) in case of greasing is 0.5°C/W.
!
@
#
!
@
#
j=125°C, VDRM applied
T
T
b=25°C, ITM=25A, Instantaneous measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
T
Junction to base
Test conditions
✽4
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16HM
MEDIUM POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
Min.
—
—
—
—
—
—
—
—
0.2
—
✽3
Limits
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
3.0
1.6
1.5
1.5
1.5
2.0
Unit
mA
V
V
V
V
30
mA
30
mA
30
mA
—
—
V
°C/W
V/µs
Voltage
class
8
12
V
DRM
(V)
400
600
(dv/dt) c
Symbol
R
L
R
L
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
ON-STATE CURRENT (A)
3
2
0
10
Min.
—
10
—
10
Unit
V/µs
Tb = 25°C
Test conditions
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–8A/ms
3. Peak off-state voltage
V
D=400V
RATED SURGE ON-STATE CURRENT
200
180
160
140
120
100
80
60
40
20
SURGE ON-STATE CURRENT (A)
4.42.40.80.4 1.2 1.6 2.0 2.8 3.2 3.6 4.0
0
10023 5710
Commutating voltage and current waveforms
44
(inductive load)
1
23 5710
2
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
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