Mitsubishi Electric Corporation Semiconductor Group BCR16E, BCR16C, BCR16B, BCR16A Datasheet
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR16A, BCR16B, BCR16C, BCR16E
APPLICATION
Contactless AC switches, light dimmer, on/off and speed control of small induction motors,
on/off control of traffic signals, on/off control of copier lamps,
solid state relay, microwave ovens
Symbol
I
T (RMS)
ITSM
I
2
t
PGM
PG (AV)
VGM
IGM
Tj
Parameter
RMS on-state current
Surge on-state current
I
2
t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Conditions Unit
A
A
A
2
s
W
W
V
A
°C
Ratings
16
170
121
5
0.5
10
2
–20 ~ +125
✽1. Gate open.
Commercial frequency, sine full
wave, 360° conduction
BCR16A, B, C
BCR16E
T
c=99°C
T
b=71°C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
•IT (RMS) ......................................................................16A
•V
DRM ..............................................................400V/500V
•I
FGT !, IRGT !, IRGT # ...........................................30mA
Symbol
V
DRM
VDSM
Parameter
Repetitive peak off-state voltage
✽1
Non-repetitive peak off-state voltage
✽1
Voltage class
Unit
V
V
MAXIMUM RATINGS
8
400
600
10
500
700
2
1
3
φ2.0 MIN
1
2
3
3 MAX
φ8.7 MAX
φ2.0 MIN
6.5 MAX
19 MAX
14 MAX
φ11.1 MAX
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE
TERMINAL
OUTLINE DRAWING
Dimensions
in mm
BCR16A
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16A, BCR16B, BCR16C, BCR16E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Test conditions
BCR16A
BCR16B
BCR16C
BCR16E
BCR16A only, 10 sec.
BCR16C only (Typical value)
BCR16E only, T
a=25°C, AC 1 minute, T2 Terminal to base
Symbol
T
stg
—
—
—
V
iso
Parameter
Storage temperature
Weight (Typical value)
Soldering temperature
Mounting torque
Isolated voltage
Ratings
–20 ~ +125
3.0
8.5
8.5
9.5
230
30
2.94
1500
Unit
°C
g
°C
kg·cm
N·m
V
Symbol
I
DRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
Rth (j-b)
(dv/dt)c
Test conditions
T
j=125°C, VDRM applied
T
c=25°C, Tb=25°C (BCR16E only), ITM=25A , Instantaneous
measurement
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=25°C, VD=6V, RL=6Ω, RG=330Ω
T
j=125°C, VD=1/2VDRM
Junction to case (BCR16A, BCR16B, BCR16C)
Junction to base (BCR16E)
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
✽2
Gate trigger current
✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.The critical-rate of rise of the off-state commutating voltage is shown in the table below.
ELECTRICAL CHARACTERISTICS
Test conditions
Voltage
class
8
10
V
DRM
(V)
400
500
Min.
—
10
—
10
Commutating voltage and current waveforms
(inductive load)
(dv/dt) c
Symbol
R
L
R
L
Unit
V/µs
1. Junction temperature
T
j=125°C
2. Rate of decay of on-state commutating current
(di/dt)
c=–8A/ms
3. Peak off-state voltage
V
D=400V
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
—
✽3
Max.
3.0
1.6
1.5
1.5
1.5
30
30
30
—
1.2
2.5
—
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
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