Microsemi Corporation MX040-20 Datasheet
(typ.0.4)
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Features
• Designed for applications with stringent profile restrictions
• Passivated mesa structure for very low leakage currents
• Epitaxial structure minimizes forward voltage drop
• Hermetically sealed, extremely low profile ceramic seal package with
• Very low package inductance and thermal resistance
• Qualification estimated completion August 1998, includes temperature
• Available in reverse voltage ranges from 50V to 300V
PRELIMINARY
flexible copper leads for surface mount soldering or welding
cycling 2,000 cycles at -197°C to +150°C (liquid-to-liquid)
MX040-20
200 Volts
10 Amps
2 µs
ELP (EXTRA LOW
PROFILE)
STANDARD
Maximum Ratings @ 25°C (unless otherwise specified)
DESCRIPTION SYMBOL MAX. UNIT
Peak Repetitive Reverse Voltage V
Working Peak Reverse Voltage V
DC Blocking Voltage V
Average Rectified Forward Current, Tc≤ 125°C
Nonrepetitive Peak Surge Current, tp= 8.3 ms, half-sinewave I
Junction Temperature Range T
Storage Temperature Range T
Thermal Resistance, Junction to Case:
RRM
RWM
I
F(ave)
FSM
stg
θ
JC
R
j
RECTIFIER
200 Volts
200 Volts
200 Volts
10 Amps
100 Amps
-65 to +175
-65 to +175
1.0
°C
°C
°C/W
Mechanical Outline
Datasheet# MSC0875
MX040-20
Electrical Parameters
PRELIMINARY
DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT
Reverse (Leakage) IR
Current IR
Forward Voltage VF1 IF= 0.1 A, Tc= 25°C 700 780 mV
pulse test, VF2 IF= 0.5 A, Tc= 25°C 750 830 mV
pw= 300 µs VF3 IF= 2 A, Tc= 25°C 825 900 mV
d/c≤ 2% VF4 IF= 5 A, Tc= 25°C 875 950 mV
Junction Capacitance Cj1 VR= 10 Vdc tbd pF
Breakdown Voltage BVR IR= 100 µA, Tc= 25°C 220 250 n/a V
Reverse Recovery Time trr IF= .5 A, IR= 1 A, IRR=
25
125
VF5 IF= 10 A, Tc= 25°C 930 1000 mV
Cj2 VR= 5 Vdc tbd pF
VR= rated VRWM Vdc,
Tc= 25°C
VR= rated VRWM Vdc,
Tc= 125°C
.25 A
.05 1 µA
0.1 mA
1 2 µs
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