Microsemi Corporation LX5503 Datasheet
LX5503
INTEGRATED PRODUCTS
The LX5503 is a power amplifier
optimized for the FCC Unlicensed
National Information Infrastructure
(U-NII) band and HiperLAN2
applications in the 5.15-5.85GHz
frequency range. The PA is implemented as a two-stage monolithic
microwave integrated circuit (MMIC)
with active bias and input/output prematching. The device is manufactured
with an InGaP/GaAs Heterojunction
Bipolar Transistor (HBT) IC process
(MOCVD). It operates at a single low
voltage supply of 3.3V with +25dBm
of P1dB and 22dB power gain
between 5.15-5.35GHz and 18dB gain
up to 5.85GHz.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
DESCRIPTION
For +18dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
very low EVM (Error-Vector
Magnitude) of 4%, and consumes less
than 200mA total DC current.
The LX5503 is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5503 an ideal
solution for broadband, medium-gain
power amplifier requirements for IEEE
802.11a, and Hiperlan2 portable WLAN
applications.
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
KEY FEATURES
Advanced InGaP HBT
5.15-5.85GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~100mA
P1dB ~ +25dBm across
5.15~5.85GHz
Power Gain ~ 22dB at 5.25GHz
& Pout=18dBm
Power Gain ~ 18dB at 5.85GHz
& Pout=18dBm
Total Current < 200mA for
Pout=18dBm
EVM ~ 4% for 64QAM/ 54Mbps
& Pout=18dBm
Excellent Temperature
Performance
Simple Input/Output Match
Minimal External Components
Small Footprint: 3x3mm
Low Profile: 0.9mm
APPLICATIONS/BENEFITS
FCC U-NII Wireless
IEEE 802.11a
HiperLAN2
WWW.Microsemi .COM
2
Copyright 2000
Rev. 1.1, 9/16/2002
PRODUCT HIGHLIGHT
This device is classified as ESD Level 1 in accordance with MILSTD-883, Method 3015 (HBM) testing. Appropriate ESD procedures
should be observed when handling this device.
PACKAGE ORDER INFO
TJ (°C)
-40 to 85 LX5503-LQ
Note: Available in Tape & Reel (3K parts per reel).
Append the letter “T” to the part number.
Plastic
LQ
16-Pin
(i.e. LX5503-LQT)
Microsemi
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Integrated Products Division
Page 1
L
L
X
X
5
5
5
5
0
0
3
3
LX5503
INTEGRATED PRODUCTS
DC Supply Voltage, RF off................................................................................6V
Collector Current.........................................................................................500mA
Total Power Dissipation...................................................................................3 W
RF Input Power...........................................................................................10dBm
Operation Ambient Temperature.......................................................-40 to +85
Storage Temperature........................................................................-60 to +150
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal
ABSOLUTE MAXIMUM RATINGS
InGaP HBT 5-6GHz Power Amplifier
.
PRODUCTION DATA SHEET
PACKAGE PIN OUT
14 15
14 15
13
13
12
12
11
11
10
10
9
9
7 8
7 8
LQ PACKAGE
(Bottom View)
o
C
o
C
WWW.Microsemi .COM
16
16
1
1
2
2
3
3
4
4
6
6
5
5
Pin Name Pin Number Description
RF IN 2, 3
Vb1 6
Vb2 7
Vcc 9
RF OUT 10, 11
Vc1 15
Vc2 14
GND
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor
base of the first stage. For 5.15-5.35GHz this pin is pre-matched to 50Ω.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage. The VB2 pin can be connected with the first
stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an
external resistor bridge(R1/R2).
Supply voltage for the bias reference and control circuits. The VCC feed line should be
terminated with a 1 µF bypass capacitor as close to the device as possible. This pin can be
combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc).
RF output for the power amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 220pF
bypass capacitor as close to the device as possible, followed by a 1µF bypass capacitor at the
supply side. This pin can be combined with VC2 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 220pF
bypass capacitor as close to the device as possible, followed by a 1 µF bypass capacitor at the
supply side. This pin can be combined with VC1 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
The center metal base of the MLP package provides both DC and RF ground as well as heat
sink for the power amplifier.
FUNCTIONAL PIN DESCRIPTION
P
P
A
A
C
C
K
K
A
A
G
G
E
E
D
D
A
A
T
T
A
A
Copyright 2000
Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5503
INTEGRATED PRODUCTS
Test conditions: Vcc=3.3V, Vref=2.86V, Icq=100mA, TA=25°C.
Parameter Condition Symbol Min. Typ. Max. Min. Typ. Max. Unit
Frequency Range f 5.15 5.35 5.7 5.85 GHz
Output Power at 1dB
Compression
Power Gain at Pout=18dBm
EVM at Pout=18dBm
Total Current at Pout=18dBm Ic_total 200 180 mA
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over
Temperature
Input Return Loss
Output Return Loss S22 -9 -10 dB
Reverse Isolation
Second Harmonic
Third Harmonic
Noise Figure
Ramp-On Time
Note: All measured data was obtained on a 5 mil GETEK evaluation board without heat sink.
ELECTRICAL CHARACTERISTICS
64QAM/54Mbps
For Icq=100mA
Over 100MHz
-40 to +85oC
Pout = 18dBm
Pout = 18dBm
10~90%
Pout 24 25 24 25 dBm
Gp 20 22 16 18 dB
4 4 %
Icq 100 100 mA
Iref 1.6 1.6 mA
S21 21 17 dB
∆S21 +/-0.2 +/-0.5 dB
∆S21 +/-1 +/-1 dB
S11 -15 -10 -12 -10 dB
S12 -40 -40 dB
-45 -42 dBc
-37 -37 dBc
NF 6 6 dB
tON 100 100 ns
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
WWW.Microsemi .COM
Copyright 2000
Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
E
E
L
L
E
E
C
C
T
T
R
R
I
I
C
C
A
A
L
L
S
S
LX5503
INTEGRATED PRODUCTS
InGaP HBT 5-6GHz Power Amplifier
PRODUCTION DATA SHEET
30
25
20
15
10
5
0
-5
-22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
30
25
Typical Power Sweep Data at Room Temperature
(Vc=3.3V, Vref=2.86V, Icq=100mA)
Pout
Gain
Pin (dBm)
Pout
Gain
CHARTS
WWW.Microsemi .COM
Freq.=5.15GHz
20
15
10
5
0
-5
-22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6
Pin (dBm)
30
25
20
15
10
5
0
-5
-22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10 12
Pout
Gain
Pin (dBm)
Freq.=5.25GHz
Freq.=5.85GHz
C
C
H
H
A
A
R
R
T
T
S
S
Copyright 2000
Rev. 1.1, 9/16/2002
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
Loading...