Microsemi Corporation 1N5196UR, 1N5196, 1N5195UR, 1N5195, 1N5194UR Datasheet

	LL-35 High Voltage / Current	1N5194UR				Low Leakage Glass Diodes
		thru
	Use Advantages	1N5196UR
	Used in applications where the highest voltage and current performance of
	small signal devices are required.

In instrument applications for voltage isolation, pulse clipping and glue logic. Ideal for use in (Medical, Military and Aero/Space).

Features

Six Sigma quality				LL-35 MINI MELF
Humidity proof glass
Metallurgically bonded	Package Type DO-213AA
Thermally matched system
No thermal fatigue
High surge capability							0.016-.022 "
				0.10"R E F					Bo th E nd C ap s
Sigma Bond™ plated contacts			2.54 mm R EF						0.41-0.55 m m
				Le ngth					D ia .
100% guaranteed solderability	0.13-0.146 "
									1.6-1.7m m
		3.30-3.70 m m					.063-.067"

Absolute Maximum Ratings

Symbol

Value

Unit

Power Dissipation at T

= 25 o C

P

tot

500

mW

AMB

Average Forward Rectified Current at T

AMB

= 25 o C

I

AV

200

mAmps

Operating and Storage Temperature Range

T

-55 to 200

oC

O&ST

Power derating at T

= 25 oC

P

3.0 (Max)

mW/oC

AMB

dr

Detail Specifications

Peak

Maximum

Maximum

Maximum Forward

Maximum

Maximum

Inverse

Reverse

Average Rectified Current

Voltage

Reverse Leakage Current

Surge

Voltage

Working Voltage

_______________

Drop

_______________

Current

(MIN.)

(IO)

(IO)

@ IF = 100mA

(IR) @ VRWM

(IFSM)

@0.1 mA

(VRMM)

25° C

150° C

(VF)

25° C

150° C

(NOTE 1)

Type

Volts

Volts

mAmps

mAmps

Volt

nA

µA

Amps

1N5194

80

70

200

50

1.0

25

5

2

1N5195

200

180

200

50

1.0

25

5

2

1N5196

250

225

200

50

1.0

25

5

2

Note 1: One half cycle, 60 Hz. sine wave.

6 Lake Street - Lawrence, MA 01841

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