Microchip Technology Inc 93C86T-I-SN, 93C86T-I-P, 93C86T-E-SN, 93C86T-SN, 93C86T-P Datasheet



1996 Microchip Technology Inc.

Preliminary

DS21132C-page 1

FEATURES

• Single 5.0V supply

• Low power CMOS technology

- 1 mA active current typical

• ORG pin selectable memory configuration
1024 x 8- or 512 x 16-bit organization (93C76)
2048 x 8- or 1024 x 16-bit organization (93C86)

• Self-timed ERASE and WRITE cycles
(including auto-erase)

• Automatic ERAL before WRAL

• Power on/off data protection circuitry

• Industry standard 3-wire serial I/O

• Device status signal during ERASE/WRITE cycles

• Sequential READ function

• 10,000,000 ERASE/WRITE cycles guaranteed

• Data retention > 200 years

• 8-pin PDIP/SOIC package

• Temperature ranges supported

DESCRIPTION

The Microchip Technology Inc. 93C76/86 are 8K and
16K low voltage serial Electrically Erasable PROMs.
The device memory is configured as x8 or x16 bits
depending on the ORG pin setup. Advanced CMOS
technology makes these devices ideal for low power
non-volatile memory applications. These devices also
have a Program Enable (PE) pin to allow the user to
write protect the entire contents of the memory array.
The 93C76/86 is available in standard 8-pin DIP and 8­pin surface mount SOIC packages.

- Commercial (C): 0 ° C to +70 ° C

- Industrial -40 ° C to +85 ° C

- Automotive (E) -40 ° C to +125 ° C

P ACKA GE TYPES

BLOCK DIAGRAM

SOIC Package

DIP Package

CS

CLK

DI

DO

V

SS

PE

V

CC

ORG

CS

CLK

DI

DO

V

CC

PE
ORG
V

SS

93C76/86

93C76/86

1
2
3

4

8
7
6

5

1
2
3

4

8
7
6

5

DO

CS

CLK

VCCV

SS

Memory

Array

Address

Decoder

Data

Register

Counter

Address

Output

Buffer

Mode

Decode

Logic

Generator

Clock

DI

PE

93C76/86

8K/16K 5.0V Microwire



Serial EEPROM

Microwire is a registered trademark of National Semiconductor Incorporated.

93C76/86

DS21132C-page 2

Preliminary



1996 Microchip Technology Inc.

1.0 ELECTRICAL
CHARACTERISTICS

1.1 Maxim

um Ratings*

V

CC

...................................................................................7.0V

All inputs and outputs w.r.t. V

SS

...............-0.6V to Vcc +1.0V

Storage temperature..................................... -65˚C to +150˚C

Ambient temp. with power applied................. -65˚C to +125˚C

Soldering temperature of leads (10 seconds)............. +300˚C

ESD protection on all pins................................................4 kV

*Notice: Stresses above those listed under “Maximum ratings”

may cause permanent damage to the device. This is a stress rat­ing only and functional operation of the device at those or any
other conditions above those indicated in the operational listings
of this specification is not implied. Exposure to maximum rating
conditions for extended periods may affect device reliability

TABLE 1-1: PIN FUNCTION TABLE

Name Function

CS

CLK

DI

DO

V

SS

ORG

PE

V

CC

Chip Select
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Memory Configuration
Program Enable
Power Supply

1.2 A

C Test Conditions

AC Waveform:

V

LO

= 2.0V

V

HI

= Vcc - 0.2V

(Note 1)

V

HI

= 4.0V for

(Note 2)

Timing Measurement Reference Level

Input 0.5 V

CC

Output 0.5 V

CC

Note 1: For V

CC

≤

4.0V

2: For V

CC

> 4.0V

TABLE 1-2: DC CHARACTERISTICS

Applicable over recommended operating ranges shown below unless otherwise noted:
V

CC

= +4.5V to +5.5V
Commercial (C): Tamb = 0 ° C to -40 ° C
Industrial (I): Tamb = -40 ° C to +85 ° C
Automotive (E): Tamb = -40 ° C to +125 ° C

Parameter Symbol Min. Max. Units Conditions

High level input voltage V

IH1

2.0 V

CC

+1 V —

Low level input voltage V

IL1

-0.3 0.8 V —

Low level output voltage V

OL1

— 0.4 V I

OL

= 2.1 mA; V

CC

= 4.5V

V

OL2

— 0.2 V I

OL

=100 µ A; V

CC

= 4.5V

High level output voltage V

OH1

2.4 — V I

OH

= -400 µ A; V

CC

= 4.5V

V

OH2

V

CC

-0.2 — V I

OH

= -100 µ A; V

CC

= 4.5V.

Input leakage current I

LI

-10 10

µ

AV

IN

= 0.1V to V

CC

Output leakage current I

LO

-10 10

µ

AV

OUT

= 0.1V to V

CC

Pin capacitance
(all inputs/outputs)

C

INT

—7pF

(Note Note:)
Tamb = +25˚C, F

CLK

= 1 MHz

Operating current I

CC

write — 3 mA F

CLK

= 2 MHz; V

CC

= 5.5V

I

CC

read — 1.5 mA F

CLK

= 2 MHz; V

CC

= 5.5V

Standby current I

CCS

— 100

µ

A CLK = CS = 0V; V

CC

= 5.5V

Note: This parameter is periodically sampled and not 100% tested.



1996 Microchip Technology Inc.

Preliminary

DS21132C-page 3

93C76/86

TABLE 1-3: AC CHARACTERISTICS

TABLE 1-4: INSTRUCTION SET FOR 93C76: ORG=1 (X16 ORGANIZATION)

TABLE 1-5: INSTRUCTION SET FOR 93C76: ORG=0 (X8 ORGANIZATION)

Applicable over recommended operating ranges shown below unless otherwise noted:
V

CC

= +4.5V to +5.5V
Commercial (C): Tamb = 0 ° C to -40 ° C
Industrial (I): Tamb = -40 ° C to +85 ° C
Automotive (E): Tamb = -40 ° C to +125 ° C

Parameter Symbol Min. Max. Units Conditions

Clock frequency F

CLK

— 2 MHz Vcc ≥ 4.5V

Clock high time T

CKH

300 — ns

Clock low time T

CKL

200 — ns

Chip select setup time T

CSS

50 — ns Relative to CLK

Chip select hold time T

CSH

0—ns

Chip select low time T

CSL

250 — ns Relative to CLK

Data input setup time T

DIS

100 — ns Relative to CLK

Data input hold time T

DIH

100 — ns Relative to CLK

Data output delay time T

PD

— 400 ns C

L

= 100 pF

Data output disable time T

CZ

— 100 ns

(Note 1)

Status valid time T

SV

— 500 ns C

L

= 100 pF

Program cycle time T

WC

—10ms

ERASE/WRITE mode (Note 2)

T

EC

— 15 ms ERAL mode

T

WL

— 30 ms WRAL mode

Endurance — 10M — cycles 25 ° C, V

CC

= 5.0V, Block Mode

(Note 3)

Note 1: This parameter is periodically sampled and not 100% tested.

2: Typical program cycle is 4 ms per word.
3: This parameter is not tested but guaranteed b y characterization. For endurance estimates in a specific appli-

cation, please consult the Total Endurance Model which can be obtained on our BBS or website.

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

READ 1 10 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 29
EWEN 1 00 1 1 X X X X X X X X — High-Z 13
ERASE 1 11 X A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 13
ERAL 1 00 1 0 X X X X X X X X — (RDY/BSY) 13
WRITE 1 01 X A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 29
WRAL 1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY) 29
EWDS 1 00 0 0 X X X X X X X X — High-Z 13

Instruction SB Opcode Address Data In Data Out

Req. CLK

Cycles

READ 1 10 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 22
EWEN 1 00 1 1 X X X X X X X X X — High-Z 14
ERASE 1 11 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 14
ERAL 1 00 1 0 X X X X X X X X X — (RDY/BSY) 14
WRITE 1 01 X A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
WRAL 1 00 0 1 X X X X X X X X X D7 - D0 (RDY/BSY) 22
EWDS 1 00 0 0 X X X X X X X X X — High-Z 14

93C76/86

DS21132C-page 4

Preliminary



1996 Microchip Technology Inc.

TABLE 1-6: INSTRUCTION SET FOR 93C86: ORG=1 (X16 ORGANIZATION)

TABLE 1-7: INSTRUCTION SET FOR 93C86: ORG=0 (X8 ORGANIZATION)

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

READ 1 10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D15 - D0 29
EWEN 1 00 1 1 X X X X X X X X — High-Z 13
ERASE 1 11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 13
ERAL 1 00 1 0 X X X X X X X X — (RDY/BSY) 13
WRITE 1 01 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D15 - D0 (RDY/BSY) 29
WRAL 1 00 0 1 X X X X X X X X D15 - D0 (RDY/BSY) 29
EWDS 1 00 0 0 X X X X X X X X — High-Z 13

Instruction SB Opcode Address Data In Data Out Req. CLK Cycles

READ 1 10 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — D7 - D0 22
EWEN 1 00 1 1 X X X X X X X X X — High-Z 14
ERASE 1 11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 — (RDY/BSY) 14
ERAL 1 00 1 0 X X X X X X X X X — (RDY/BSY) 14
WRITE 1 01 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 D7 - D0 (RDY/BSY) 22
WRAL 1 00 0 1 X X X X X X X X X D7 - D0 (RDY/BSY) 22
EWDS 1 00 0 0 X X X X X X X X X — High-Z 14