
1996 Microchip Technology Inc. DS21109E-page 1
FEATURES
• Operationally equivalent to Xilinx
XC1700 family
• Wide voltage range 3.0 V to 6.0 V
• Maximum read current 10 mA at 5.0 V
• Standby current 100 µ A typical
• Industry standard Synchronous Serial Interface/
1 bit per rising edge of clock
• Full Static Operation
• Sequential Read/Program
• Cascadable Output Enable
• 10 MHz Maximum Clock Rate @ 5.0 Vdc
• Programmable Polarity on Hardware Reset
• Programming with industry standard EPROM programmers
• Electrostatic discharge protection > 4,000 volts
• 8-pin PDIP/SOIC and 20-pin PLCC packages
• Data Retention > 200 years
• Temperature ranges:
- Commercial: 0 ° C to +70 ° C
- Industrial: -40 ° C to +85 ° C
DESCRIPTION
The Microchip Technology Inc. 37LV36/65/128 is a
family of Serial OTP EPROM devices organized internally in a x32 configuration. The family also features a
cascadable option for increased memory storage
where needed. The 37LV36/65/128 is suitable for
many applications in which look-up table information
storage is desirable and provides full static operation in
the 3.0V to 6.0V V
CC
range. The devices also support
the industry standard serial interface to the popular
RAM-based Field Programmable Gate Arrays (FPGA).
Advanced CMOS technology makes this an ideal bootstrap solution for today's high speed SRAM-based
FPGAs. The 37LV36/65/128 family is available in the
standard 8-pin plastic DIP, 8-pin SOIC and 20-pin
PLCC packages.
Device Bits Programming Word
37LV36 36,288 1134 x 32
37LV65 65,536 2048 x 32
37LV128 131,072 4096 x 32
PACKA GE TYPES
BLOCK DIAGRAM
CLK
RESET/OE
CE
CEO
V
PP
Vss
9
10
11
12
13
321
20
19
18
17
16
15
14
4
5
6
7
8
VCCDATA
1
2
3
4
8
7
6
5
VCC
VPP
CEO
VSS
DATA
CLK
RESET/OE
CE
1
2
3
4
8
7
6
5
DATA
CLK
RESET/OE
CE
VCC
VPP
CEO
VSS
PDIP
37LV36
37LV65
37LV128
SOIC
PLCC
37LV36
37LV65
37LV128
37LV36
37LV65
37LV128
OE
DATA
EPROM
ARRAY
CEO
ADDRESS
Counter
CLK
RESET/OE
CE
36K, 64K, and 128K Serial EPROM Family
Xilinx is a registered trademark of Xilinx Corporation.

37LV36/65/128
DS21109E-page 2
1996 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
1.1 Maxim
um Ratings*
V
CC
and input voltages w.r.t. V
SS
..........-0.6V to +0.6V
V
PP
voltage w.r.t. V
SS
during
programming......................................-0.6V to +14.0V
Output voltage w.r.t. V
SS
............... -0.6V to V
CC
+0.6V
Storage temperature ..........................-65˚C to +150˚C
Ambient temp. with power applied .....-65˚C to +125˚C
Soldering temperature of leads (10 sec.).........+300 ° C
ESD protection on all pins .....................................≥ 4 kV
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
TABLE 1-1: PIN FUNCTION TABLE
Name Function 8 20
DATA Data I/O 1 2
CLK Clock Input 2 4
RESET/OE
Reset Input and Output
Enable
36
CE
Chip Enable Input 4 8
V
SS
Ground 5 10
CEO
Chip Enable Output 6 14
V
PP
Programming Voltage Supply 7 17
V
CC
+3.0V to 6.0V Power Supply 8 20
Not Labeled Not utilized, not connected
TABLE 1-2: READ OPERATION DC CHARACTERISTICS
V
CC
= +3.0 to 6.0V
Commercial (C): Tamb = 0˚C to +70˚C
Industrial (I): Tamb = -40˚C to +85˚C
Parameter Symbol Min. Max. Units Conditions
DATA, CE
, CEO and Reset pins:
High level input voltage
Low level input voltage
High level output voltage
Low level output voltage
V
IH
V
IL
V
OH1
V
OH2
V
OL
2.0
-0.3
3.86
2.4
—
V
CC
0.8
.32
V
V
VVI
OH
= -4 mA V
CC
≥
4.5V
I
OH
= -4 mA V
CC
≥
3.0V
I
OL
= 4.0 mA
Input Leakage I
LI
-10 10
µ
AV
IN
= .1V to V
CC
Output Leakage I
LO
-10 10
µ
AV
OUT
= .1V to V
CC
Input Capacitance
(all inputs/outputs)
C
INT
— 10 pF Tamb = 25 ° C; F
CLK
= 1 MHz (Note 1)
Operating Current I
CC
Read —
—
10
2
mAmAV
CC
= 6.0V, CLK = 10 MHz
V
CC
= 3.6V, CLK = 2.5 MHz
Outputs open
Standby Current I
CCS
— 100
50
µ A µ
A
V
CC
= 6.0V, CE = 5.8V
V
CC
= 3.6V, CE = 3.4V
Note 1: This parameter is initially characterized and not 100% tested.

1996 Microchip Technology Inc. DS21109E-page 3
2.0 DATA
2.1 Data I/O
Three-state DATA output for reading and input during
programming.
3.0 CLK
3.1 Cloc
k Input
Used to increment the internal address and bit
counters for reading and programming.
4.0 RESET/OE
4.1 Reset Input and Output Enab
le
A LOW level on both the CE
and RESET/OE inputs
enables the data output driver. A HIGH level on
RESET/OE
resets both the address and bit counters.
In the 37LVXXX, the logic polarity of this input is programmable as either RESET/OE
or OE/RESET. This
document describes the pin as RESET/OE
although
the opposite polarity is also possible. This option is
defined and set at device program time.
5.0 CE
5.1 Chip Enab
le Input
CE
is used for device selection. A LOW level on both
CE
and OE enables the data output driver. A HIGH
level on CE
disables both the address and bit counters
and forces the device into a low power mode.
6.0 CEO
6.1 Chip Enab
le Output
This signal is asserted LOW on the clock cycle following the last bit read from the memory. It will stay LOW
as long as CE
and OE are both LOW. It will then follow
CE
until OE goes HIGH. Thereafter, CEO will stay
HIGH until the entire EPROM is read again. This pin
also used to sense the status of RESET polarity when
Programming Mode is entered.
7.0 VPP
7.1 Pr
ogramming Voltage Supply
Used to enter programming mode (+13 volts) and to
program the memory (+13 volts). Must be connected
directly to Vcc for normal Read operation. No overshoot above +14 volts is permitted.
8.0 CASCADING SERIAL EPROMS
Cascading Serial EPROMs provide additional memory
for multiple FPGAs configured as a daisy-chain, or for
future applications requiring larger configuration memories.
When the last bit from the first Serial EPROM is read,
the next clock signal to the Serial EPROM asserts its
CEO
output LOW and disables its DATA line. The second Serial EPROM recognizes the LOW level on its CE
input and enables its DATA output.
When configuration is complete, the address counters
of all cascaded Serial EPROMs are reset if RESET
goes LOW forcing the RESET/OE
on each Serial
EPROM to go HIGH. If the address counters are not to
be reset upon completion, then the RESET/OE
inputs
can be tied to ground.
Additional logic may be required if cascaded memories
are so large that the rippled chip enable is not fast
enough to activate successive Serial EPROMs.
9.0 STANDBY MODE
The 37LVXXX enters a low-power Standby Mode
whenever CE
is HIGH. In Standby Mode, the Serial
EPROM consumes less than 100 µ A of current. The
output will remain in a high-impedance state regardless
of the state of the OE
input.
10.0 PROGRAMMING MODE
Programming Mode is entered by holding V
PP
HIGH
(+13 volts) for two clock edges and then holding V
PP
=
V
DD
for one clock edge. Programming mode is exited
by driving a LOW on both CE
and OE and then removing power from the device. Figures 4 through 7 show
the programming algorithm.
11.0 37LVXXX RESET POLARITY
The 37LVXXX lets the user choose the reset polarity as
either RESET/OE
or OE/RESET. Any third-party commercial programmer should prompt the user for the
desired reset polarity.
The programming of the overflow word should be handled transparently by the EPROM programmer; it is
mentioned here as supplemental information only.
The polarity is programmed into the first overflow word
location, maximum address+1. 00000000 in these
locations makes the reset active LOW, FFFFFFFF in
these locations makes the reset active HIGH. The
default condition is RESET active HIGH.

37LV36/65/128
DS21109E-page 4
1996 Microchip Technology Inc.
FIGURE 11-1: READ CHARACTERISTICS TIMING
TABLE 11-1: READ CHARACTERISTICS
AC Testing Waveform: V
IL
= 0.2V; V
IH
= 3.0V
AC Test Load: 50 pF
V
OL
= V
OL
_MAX; V
OH
= V
OH
_MIN
Symbol Parameter
Limits 3.0V ≤
Vcc ≤ 6.0V
Limits 4.5V ≤
Vcc ≤ 6.0V
Units Conditions
Min. Max. Min. Max.
T
OE
OE
to Data Delay — 45 — 45 ns
T
CE
CE
to Data Delay — 60 — 50 ns
T
CAC
CLK to Data Delay — 200 — 60 ns
T
OH
Data Hold from CE
, OE or CLK 0—0—ns
T
DF
CE
or OE to Data Float Delay — 50 — 50 ns Notes 1, 2
T
LC
CLK Low Time 100 — 25 — ns
T
HC
CLK High Time 100 — 25 — ns
T
SCE
CE
Set up Time to CLK
(to guarantee proper counting)
40 — 25 — ns Note 1
T
SCED
CE setup time to CLK
(to guarantee proper DATA read)
100 — 80 — ns
T
HCE
CE
Hold Time to CLK
(to guarantee proper counting)
0—0—nsNote 1
T
HCED
CE
hold time to CLK
(to guarantee proper DATA read)
50 — 0 — ns
T
HOE
OE
High Time
(Guarantees counters are Reset)
100 20 — ns
CLK max Clock Frequency — 2.5 — 10 MHz
Note 1: This parameter is periodically sampled and not 100% tested.
2: Float delays are measured with output pulled through 1k Ω to V
LOAD
= V
CC
/2.
THCE
TSCE
THOE
TDF
TOH
TOH
THC
TCAC
TLC
TSCE
TOE
DATA
CLK
RESET/OE
CE
TCE
TSCED
THCED