This document includes the programming specifications
for the following devices:
• PIC18F2221• PIC18F4221
• PIC18F2321• PIC18F4321
• PIC18F2410• PIC18F4410
• PIC18F2420• PIC18F4420
• PIC18F2455• PIC18F4455
• PIC18F2480• PIC18F4480
• PIC18F2510• PIC18F4510
• PIC18F2515• PIC18F4515
• PIC18F2520• PIC18F4520
• PIC18F2525• PIC18F4525
• PIC18F2550• PIC18F4550
• PIC18F2580• PIC18F4580
• PIC18F2585• PIC18F4585
• PIC18F2610• PIC18F4610
• PIC18F2620• PIC18F4620
• PIC18F2680• PIC18F4680
2.0PROGRAMMING OVERVIEW
PIC18F2XX0/2X21/2XX5/4XX0/4X21/4XX5 devices
can be programmed using either the high-voltage
In-Circuit Serial Programming™ (ICSP™) method or
the low-voltage ICSP method. Both methods can be
done with the device in the users’ system. The
low-voltage ICSP method is slightly different than the
high-voltage method and these differences are noted
where applicable. This programming specification
applies to PIC18F2XX0/2X21/2XX5/4XX0/4X21/4XX5
devices in all package types.
2.1Hardware Requirements
In High-Voltage ICSP mode, PIC18F2XX0/2X21/2XX5/
4XX0/4X21/4XX5 devices require two programmable
power supplies: one for VDD and one for MCLR/VPP/
RE3. Both supplies should have a minimum resolution
of 0.25V. Refer to Section 6.0 “AC/DC Characteris-
tics Timing Requirements for Program/Verify Test
Mode” for additional hardware parameters.
2.1.1LOW-VOLTAGE ICSP
PROGRAMMING
In Low-Voltage ICSP mode, PIC18F2XX0/2X21/2XX5/
4XX0/4X21/4XX5 devices can be programmed using a
VDD source in the operating range. The MCLR/VPP/
RE3 does not have to be brought to a different voltage,
but can instead be left at the normal operating voltage.
Refer to Section 6.0 “AC/DC Characteristics TimingRequirements for Program/Verify Test Mode” for
additional hardware parameters.
2.2Pin Diagrams
The pin diagrams for the PIC18F2XX0/2X21/2XX5/
4XX0/4X21/4XX5 family are shown in Figure 2-1 and
Figure 2-2.
TABLE 2-1:PIN DESCRIPTIONS (DURING PROGRAMMING):
PIC18F2XX0/2X21/2XX5/4XX0/4X21/4XX5
Pin Name
MCLR
/VPP/RE3VPPPProgramming Enable
(2)
DD
V
(2)
V
SS
RB5PGMILow-Voltage ICSP™ Input when LVP
RB6PGCISerial Clock
RB7PGDI/OSerial Data
Legend:I = Input, O = Output, P = Power
Note 1:See Figure 5-1
FIGURE 2-2:PIC18F2XX0/2X21/2XX5/4XX0/4X21/4XX5 FAMILY PIN DIAGRAMS
/ICPORTS
44-Pin TQFP
The following devices are included in
40-pin TQFP parts:
• PIC18F4221• PIC18F4515
• PIC18F4321• PIC18F4525
• PIC18F4410• PIC18F4550
• PIC18F4420• PIC18F4580
• PIC18F4455• PIC18F4585
• PIC18F4480• PIC18F4610
• PIC18F4510• PIC18F4620
• PIC18F4520• PIC18F4680
RC7
RD4
RD5
RD6
RD7
V
SS
VDD
RB0
RB1
RB2
RB3
1
2
3
4
5
6
7
8
9
10
11
RC6
RC5
44
43
121314
RC4
RD3
RD2
RD1
414039
42
PIC18F4XXX
15
16
17
(1)
RD0
RC3
RC2
RC1
363435
37
38
1819202122
NC
33
32
31
30
29
28
27
26
25
24
23
(1)
NC
RC0
OSC2
OSC1
V
SS
VDD
RE2
RE1
RE0
RA5
RA4
/ICVPP
Note 1: These pins are NC (No Connect) for all devices listed
above with the exception of the PIC18F4221,
PIC18F4321, PIC18F4455 and the PIC18F4550
devices (see Section 2.8 “Dedicated ICSP/ICDPort (44-Pin TQFP Only)” for more information on
programming these pins in these devices).
44-Pin QFN
The following devices are included in
44-pin QFN parts:
For PIC18FX6X0 devices, the code memory space
extends from 0000h to 0FFFFh (64 Kbytes) in four
16-Kbyte blocks. For PIC18FX5X5 devices, the code
memory space extends from 0000h to 0BFFFFh
(48 Kbytes) in three 16-Kbyte blocks. Addresses
0000h through 07FFh, however, define a “Boot Block”
region that is treated separately from Block 0. All of
these blocks define code protection boundaries within
the code memory space.
The size of the Boot Block in PIC18F2585/2680/4585/
4680 devices can be configured as 1, 2 or 4K words
(see Table 5-1). This is done through the BBSIZ<1:0>
bits in the Configuration register, CONFIG4L. It is
important to note that increasing the size of the Boot
Block decreases the size of Block 0.
DeviceCode Memory Size (Bytes)
PIC18F2515
PIC18F2525
PIC18F2585
PIC18F4515
PIC18F4525
PIC18F4585
PIC18F2610
PIC18F2620
PIC18F2680
PIC18F4610
PIC18F4620
PIC18F4680
FIGURE 2-3:MEMORY MAP AND THE CODE MEMORY SPACE
FOR PIC18FX5X5/X6X0 DEVICES
000000h
01FFFFh
Code Memory
64 Kbytes
(PIC18FX6X0)
MEMORY SIZE/DEVICE
MEMORY
000000h-00BFFFh (48K)
000000h-00FFFFh (64K)
48 Kbytes
(PIC18FX5X5)
Address
Range
200000h
3FFFFFh
Unimplemented
Read as ‘0’
Configuration
and ID
Space
11/100100
Boot
Block*
Block 0
Boot
Block*
Block 0
Boot
Block*
Block 0
Block 1
Block 1
Block 2
Block 3
Unimplemented
Reads all ‘0’s
BBSIZ<1:0>
11/100100
Boot
Block*
Block 0
Unimplemented
Reads all ‘0’s
Boot
Block*
Block 0
Block 1
Block 2
Boot
Block*
Block 0
000000h
0007FFh
000800h
000FFFh
001000h
001FFFh
002000h
003FFFh
004000h
007FFFh
008000h
00BFFFh
00C000h
00FFFFh
01FFFFh
Note: Sizes of memory areas are not to scale.
* Boot Block size is determined by the BBSIZ1:BBSIZ0 bits in CONFIG4L.
extends from 000000h to 007FFFh (32 Kbytes) in four
8-Kbyte blocks. For PIC18FX4X5 devices, the code
memory space extends from 000000h to 005FFFh
(24 Kbytes) in three 8-Kbyte blocks. Addresses
000000h through 0007FFh, however, define a “Boot
Block” region that is treated separately from Block 0. All
of these blocks define code protection boundaries
within the code memory space.
extends from 000000h to 003FFFh (16 Kbytes) in two
8-Kbyte blocks. Addresses 000000h through 0003FFh,
however, define a “Boot Block” region that is treated
separately from Block 0. All of these blocks define code
protection boundaries within the code memory space.
space extends from 0000h to 03FFFh (16 Kbytes) in
one 16-Kbyte block. For PIC18F2580/4580 devices,
the code memory space extends from 0000h to
07FFFh (32 Kbytes) in two 16-Kbyte blocks.
Addresses 0000h through 07FFh, however, define a
“Boot Block” region that is treated separately from
Block 0. All of these blocks define code protection
boundaries within the code memory space.
DeviceCode Memory Size (Bytes)
PIC18F2480
PIC18F4480
PIC18F2580
PIC18F4580
The size of the Boot Block in PIC18F2480/2580/4480/
4580 devices can be configured as 1 or 2K words (see
Table 5-1). This is done through the BBSIZ bit in the
Configuration register, CONFIG4L. It is important to
note that increasing the size of the Boot Block
decreases the size of Block 0.
FIGURE 2-6:MEMORY MAP AND THE CODE MEMORY SPACE
FOR PIC18F2480/2580/4480/4580 DEVICES
000000h
01FFFFh
Code Memory
Unimplemented
Read as ‘0’
32 Kbytes
(PIC18FX580)
10 1 0
Boot Block*
MEMORY SIZE/DEVICE
BBSIZ<0>
Boot Block*
Boot Block*
MEMORY
000000h-003FFFh (16K)
000000h-007FFFh (32K)
16 Kbytes
(PIC18FX480)
Boot Block*
Address
Range
000000h
0007FFh
000800h
000FFFh
001000h
Block 0Block 0
200000h
Configuration
and ID
Space
3FFFFFh
Unimplemented
Reads all ‘0’s
Note: Sizes of memory areas are not to scale.
* Boot Block size is determined by the BBSIZ bit in CONFIG4L.
space extends from 0000h to 00FFFh (4 Kbytes) in one
4-Kbyte block. For PIC18F2321/4321 devices, the
code memory space extends from 0000h to 01FFFh
(8 Kbytes) in two 4-Kbyte blocks. Addresses 0000h
through 07FFh, however, define a variable “Boot Block”
region that is treated separately from Block 0. All of
these blocks define code protection boundaries within
the code memory space.
DeviceCode Memory Size (Bytes)
PIC18F2221
PIC18F4221
PIC18F2321
PIC18F4321
The size of the Boot Block in PIC18F2221/2321/4221/
4321 devices can be configured as 256, 512 or
1024 words (see Figure 2-7). This is done through the
BBSIZ<1:0> bits in the Configuration register,
CONFIG4L (see Table 5-1). It is important to note that
increasing the size of the Boot Block decreases the
size of Block 0.
FIGURE 2-7:MEMORY MAP AND THE CODE MEMORY SPACE
FOR PIC18F2221/2321/4221/4321 DEVICES
MEMORY SIZE/DEVICE
000000h
01FFFFh
200000h
Code Memory
Unimplemented
Read as ‘0’
11/10010011/10/0100
Boot Block*
1K word
Block 0
1K word
8Kbytes
(PIC18FX321)
Boot Block*
512 words
Block 0
1.5K words
BBSIZ<1:0>
Boot Block*
256 words
Block 0
1.75K words
MEMORY
4Kbytes
(PIC18FX221)
Boot Block*
512 words
Block 0
0.5K words
000000h-000FFFh (4K)
000000h-001FFFh (8K)
Address
Range
Boot Block*
256 words
Block 0
0.75K words
Block 1
1K word
000000h
0001FFh
000200h
0003FFh
000400h
0007FFh
000800h
000FFFh
001000h
Configuration
and ID
Space
3FFFFFh
Note: Sizes of memory areas are not to scale.
* Boot Block size is determined by the BBSIZ<1:0> bits in CONFIG4L.
In addition to the code memory space, there are three
blocks that are accessible to the user through table
reads and table writes. Their locations in the memory
map are shown in Figure 2-8.
Users may store identification information (ID) in eight
ID registers. These ID registers are mapped in
addresses 200000h through 200007h. The ID locations
read out normally, even after code protection is applied.
2.3.1MEMORY ADDRESS POINTER
Memory in the address space, 0000000h to 3FFFFFh,
is addressed via the Table Pointer register, which is
comprised of three Pointer registers:
• TBLPTRU, at RAM address 0FF8h
• TBLPTRH, at RAM address 0FF7h
• TBLPTRL, at RAM address 0FF6h
Locations 300000h through 30000Dh are reserved for
the configuration bits. These bits select various device
options and are described in Section 5.0 “Configura-
TBLPTRUTBLPTRHTBLPTRL
Addr[21:16]Addr[15:8]Addr[7:0]
tion Word”. These configuration bits read out normally,
even after code protection.
Locations 3FFFFEh and 3FFFFFh are reserved for the
device ID bits. These bits may be used by the program-
The 4-bit command, ‘0000’ (core instruction), is used to
load the Table Pointer prior to using many read or write
operations.
mer to identify what device type is being programmed
and are described in Section 5.0 “ConfigurationWord”. These device ID bits read out normally, even
after code protection.
FIGURE 2-8:CONFIGURATION AND ID LOCATIONS FOR PIC18F2XX0/2X21/2XX5/4XX0/4X21/4XX5
Figure 2-9 shows the high-level overview of the
programming process. First, a Bulk Erase is performed.
Next, the code memory, ID locations and data EEPROM
are programmed (selected devices only, see Section 3.3“Data EEPROM Programming”). These memories are
then verified to ensure that programming was successful.
If no errors are detected, the configuration bits are then
programmed and verified.
FIGURE 2-9:HIGH-LEVEL
PROGRAMMING FLOW
Start
Perform Bulk
Erase
Program Memory
Program IDs
2.5Entering and Exiting High-Voltage
ICSP Program/Verify Mode
As shown in Figure 2-10, the High-Voltage ICSP
Program/Verify mode is entered by holding PGC and
PGD low and then raising MCLR/VPP/RE3 to VIHH
(high voltage). Once in this mode, the code memory,
data EEPROM (selected devices only, see Section 3.3“Data EEPROM Programming”), ID locations and
configuration bits can be accessed and programmed in
serial fashion. Figure 2-11 shows the exit sequence.
The sequence that enters the device into the Program/
Verify mode places all unused I/Os in the high-impedance
state.
2.6Entering and Exiting Low-Voltage
ICSP Program/Verify Mode
When the LVP configuration bit is ‘1’ (see Section 5.3
“Single-Supply ICSP Programming”), the
Low-Voltage ICSP mode is enabled. As shown in
Figure 2-12, Low-Voltage ICSP Program/Verify mode
is entered by holding PGC and PGD low, placing a logic
high on PGM and then raising MCLR
In this mode, the RB5/PGM pin is dedicated to the
programming function and ceases to be a general
purpose I/O pin. Figure 2-13 shows the exit sequence.
The sequence that enters the device into the Program/
Verify mode places all unused I/Os in the high-impedance
state.
FIGURE 2-12:ENTERING LOW-VOLTAGE
PROGRAM/VERIFY MODE
P15
MCLR/VPP/RE3
VDD
VIH
PGM
PGD
PGC
VIH
PGD = Input
FIGURE 2-13:EXITING LOW-VOLTAGE
PROGRAM/VERIFY MODE
P16
MCLR/VPP/RE3
VDD
PGM
PGD
PGC
VIH
PGD = Input
/VPP/RE3 to VIH.
P12
P18
VIH
2.7Serial Program/Verify Operation
The PGC pin is used as a clock input pin and the PGD
pin is used for entering command bits and data input/
output during serial operation. Commands and data are
transmitted on the rising edge of PGC, latched on the
falling edge of PGC and are Least Significant bit (LSb)
first.
2.7.14-BIT COMMANDS
All instructions are 20 bits, consisting of a leading 4-bit
command followed by a 16-bit operand, which depends
on the type of command being executed. To input a
command, PGC is cycled four times. The commands
needed for programming and verification are shown in
Ta bl e 2 -7 .
Depending on the 4-bit command, the 16-bit operand
represents 16 bits of input data or 8 bits of input data
and 8 bits of output data.
Throughout this specification, commands and data are
presented as illustrated in Table 2-8. The 4-bit
command is shown Most Significant bit (MSb) first. The
command operand, or “Data Payload”, is shown
<MSB><LSB>. Figure 2-14 demonstrates how to
serially present a 20-bit command/operand to the
device.
2.7.2CORE INSTRUCTION
The core instruction passes a 16-bit instruction to the
CPU core for execution. This is needed to set up
registers as appropriate for use with other commands.
TABLE 2-7:COMMANDS FOR
PROGRAMMING
Description
Core Instruction
(Shift in16-bit instruction)
Shift out TABLAT register0010
Table Read1000
Table Read, post-increment1001
Table Read, post-decrement1010
Table Read, pre-increment1011
Table Write1100
Table Write, post-increment by 21101
Table Write, start programming,
post-increment by 2
The PIC18F4221/4321 and PIC18F4455/4550 44-pin
TQFP devices are designed to support an alternate
programming input, the dedicated ICSP/ICD port. The
primary purpose of this port is to provide an alternate
In-Circuit Debugging (ICD) option and free the pins
(RB6, RB7 and MCLR
debugging the application. In conjunction with ICD
capability, however, the dedicated ICSP/ICD port also
provides an alternate port for ICSP.
Setting the ICPORT configuration bit enables the
dedicated ICSP/ICD port. The dedicated ICSP/ICD
port functions the same as the default ICSP/ICD port;
however, alternate pins are used instead of the default
pins. Table 2-9 identifies the functionally equivalent
pins for ICSP purposes:
The dedicated ICSP/ICD port is an alternate port. Thus,
ICSP is still available through the default port even
though the ICPORT configuration bit is set. When the
) that would normally be used for
10 111315 161412
9
P5A
IH is seen on the MCLR/VPP/RE3 pin prior to applying
V
IH to the ICRST/ICVPP pin, then the state of the
V
ICRST/ICV
seen on ICRST/ICV
PP/RE3, then the state of the MCLR/VPP/RE3 pin is
V
PP pin is ignored. Likewise, when the VIH is
PP prior to applying VIH to MCLR/
234
1
nnnn
Fetch Next 4-Bit Command
ignored.
Note:The ICPORT configuration bit can only be
programmed through the default ICSP
port. Chip Erase functions through the
dedicated ICSP/ICD port do not affect this
bit.
When the ICPORT configuration bit is set
(dedicated ICSP/ICD port enabled), the
NC/ICPORTS pin must be tied to either
DD or VSS.
V
The ICPORT configuration bit must be
maintained clear for all 28-pin and 40-pin
devices; otherwise, unexpected operation
may occur.
Programming includes the ability to erase or write the
various memory regions within the device.
In all cases except high-voltage ICSP Bulk Erase, the
EECON1 register must be configured in order to
operate on a particular memory region.
When using the EECON1 register to act on code
memory, the EEPGD bit must be set (EECON1<7> = 1)
and the CFGS bit must be cleared (EECON1<6> = 0).
The WREN bit must be set (EECON1<2> = 1) to
enable writes of any sort (e.g., erases) and this must be
done prior to initiating a write sequence. The FREE bit
must be set (EECON1<4> = 1) in order to erase the
program space being pointed to by the Table Pointer.
The erase or write sequence is initiated by setting the
WR bit (EECON1<1> = 1). It is strongly recommended
that the WREN bit only be set immediately prior to a
program erase.
3.1ICSP Erase
3.1.1HIGH-VOLTAGE ICSP BULK ERASE
Erasing code or data EEPROM is accomplished by
configuring two Bulk Erase Control registers located at
3C0004h and 3C0005h. Code memory may be erased
portions at a time, or the user may erase the entire
device in one action. Bulk Erase operations will also
clear any code-protect settings associated with the
memory block erased. Erase options are detailed in
Table 3-1. If data EEPROM is code-protected
(CPD = 0), the user must request an erase of data
EEPROM (e.g., 0084h as shown in Table 3-1).
The code sequence to erase the entire device is shown
in Table 3-2 and the flowchart is shown in Figure 3-1.
Note:A Bulk Erase is the only way to reprogram
code-protect bits from an ON state to an
OFF state.
0E 3C
6E F8
0E 00
6E F7
0E 05
6E F6
0F 0F
0E 3C
6E F8
0E 00
6E F7
0E 04
6E F6
87 87
00 00
00 00
Core Instruction
MOVLW 3Ch
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 05h
MOVWF TBLPTRL
Write 0Fh to 3C0005h
MOVLW 3Ch
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 04h
MOVWF TBLPTRL
Write 8787h TO 3C0004h
to erase entire
device.
NOP
Hold PGD low until
erase completes.
FIGURE 3-1:BULK ERASE FLOW
TABLE 3-1:BULK ERASE OPTIONS
Description
Chip Erase0F87h
Erase Data EEPROM
Erase Boot Block0081h
Erase Config Bits0082h
Erase Code EEPROM Block 00180h
Erase Code EEPROM Block 10280h
Erase Code EEPROM Block 20480h
Erase Code EEPROM Block 30880h
Note 1: Selected devices only, see Section 3.3
“Data EEPROM Programming”.
The actual Bulk Erase function is a self-timed
operation. Once the erase has started (falling edge of
the 4th PGC after the NOP command), serial execution
will cease until the erase completes (parameter P11).
During this time, PGC may continue to toggle but PGD
must be held low.
When using low-voltage ICSP, the part must be
supplied by the voltage specified in parameter D111
Bulk Erase is to be executed. All other Bulk Erase
details as described above apply.
If it is determined that a program memory erase must
be performed at a supply voltage below the Bulk Erase
limit, refer to the erase methodology described in
If it is determined that a data EEPROM erase
(selected devices only, see Section 3.3 “DataEEPROM Programming”) must be performed at a
supply voltage below the Bulk Erase limit, follow the
methodology described in Section 3.3 “DataEEPROM Programming” and write ‘1’s to the array.
if a
00
16-Bit
Data Payload
0000
Erase Time
Data Payload
3.1.3ICSP ROW ERASE
Regardless of whether high or low-voltage ICSP is
used, it is possible to erase one row (64 bytes of data),
provided the block is not code or write-protected. Rows
are located at static boundaries, beginning at program
memory address 000000h, extending to the internal
program memory limit (see Section 2.3 “MemoryMaps”).
The Row Erase duration is externally timed and is
controlled by PGC. After the WR bit in EECON1 is set,
a NOP is issued, where the 4th PGC is held high for the
duration of the programming time, P9.
After PGC is brought low, the programming sequence
is terminated. PGC must be held low for the time
specified by parameter P10 to allow high-voltage
discharge of the memory array.
The code sequence to Row Erase a PIC18F2XX0/2X21/
2XX5/4XX0/4X21/4XX5 device is shown in Table 3-3.
The flowchart shown in Figure 3-3 depicts the logic
necessary to completely erase a PIC18F2XX0/2X21/
2XX5/4XX0/4X21/4XX5 device. The timing diagram that
details the Start Programming command and
parameters P9 and P10 is shown in Figure 3-5.
Programming code memory is accomplished by first
loading data into the write buffer and then initiating a
programming sequence. The write and erase buffer
sizes, shown in Table 3-4, can be mapped to any
location of the same size beginning at 000000h. The
actual memory write sequence takes the contents of
this buffer and programs the proper amount of code
memory that contains the Table Pointer.
The programming duration is externally timed and is
controlled by PGC. After a Start Programming
command is issued (4-bit command, ‘1111’), a NOP is
issued, where the 4th PGC is held high for the duration
of the programming time, P9.
TABLE 3-4:WRITE AND ERASE BUFFER SIZES
Devices (Arranged by Family)
PIC18F2221, PIC18F2321, PIC18F4221, PIC18F4321864
PIC18F2410, PIC18F2510, PIC18F4410, PIC18F4510
PIC18F2420, PIC18F2520, PIC18F4420, PIC18F4520
PIC18F2480, PIC18F2580, PIC18F4480, PIC18F4580
PIC18F2455, PIC18F2550, PIC18F4455, PIC18F4550
PIC18F2515, PIC18F2610, PIC18F4515, PIC18F4610
PIC18F2585, PIC18F2680, PIC18F4585, PIC18F4680
After PGC is brought low, the programming sequence
is terminated. PGC must be held low for the time
specified by parameter P10 to allow high-voltage
discharge of the memory array.
The code sequence to program a PIC18F2XX0/2X21/
2XX5/4XX0/4X21/4XX5 device is shown in Table 3-5.
The flowchart, shown in Figure 3-4, depicts the logic
necessary to completely write a PIC18F2XX0/2X21/
2XX5/4XX0/4X21/4XX5 device. The timing diagram
that details the Start Programming command and
parameters P9 and P10 is shown in Figure 3-5.
Note:The TBLPTR register must point to the
same region when initiating the programming sequence as it did when the write
buffers were loaded.
The previous programming example assumed that the
device had been Bulk Erased prior to programming
(see Section 3.1.1 “High-Voltage ICSP Bulk Erase”).
It may be the case, however, that the user wishes to
modify only a section of an already programmed
device.
The appropriate number of bytes required for the erase
buffer must be read out of code memory (as described
in Section 4.2 “Verify Code Memory and IDLocations”) and buffered. Modifications can be made
on this buffer. Then, the block of code memory that was
read out must be erased and rewritten with the
modified data.
The WREN bit must be set if the WR bit in EECON1 is
used to initiate a write sequence.
TABLE 3-6:MODIFYING CODE MEMORY
4-Bit
Command
Step 1: Direct access to code memory.
Step 2: Read and modify code memory (see Section 4.1 “Read Code Memory, ID Locations and Configuration Bits”).
0000
0000
Step 3: Set the Table Pointer for the block to be erased.
0000
0000
0000
0000
0000
0000
Step 4: Enable memory writes and setup an erase.
0000
0000
Step 5: Initiate erase.
0000
0000
Step 6: Load write buffer. The correct bytes will be selected based on the Table Pointer.
0000
0000
0000
0000
0000
0000
1101
.
.
.
1111
0000
To continue modifying data, repeat Steps 2 through 6, where the address pointer is incremented by the appropriate number of bytes
(see Table 3-4) at each iteration of the loop. The write cycle must be repeated enough times to completely rewrite the contents of
the erase buffer.
Step 7: Disable writes.
000094 A6BCFEECON1, WREN
Data PayloadCore Instruction
8E A6
9C A6
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
84 A6
88 A6
82 A6
00 00
0E <Addr[21:16]>
6E F8
0E <Addr[8:15]>
6E F7
0E <Addr[7:0]>
6E F6
<MSB><LSB>
.
.
.
<MSB><LSB>
00 00
Data EEPROM is accessed one byte at a time via an
address pointer (register pair EEADRH:EEADR) and a
data latch (EEDATA). Data EEPROM is written by
loading EEADRH:EEADR with the desired memory
location, EEDATA with the data to be written and initiating a memory write by appropriately configuring the
EECON1 register. A byte write automatically erases the
location and writes the new data (erase-before-write).
When using the EECON1 register to perform a data
EEPROM write, both the EEPGD and CFGS bits must
be cleared (EECON1<7:6> = 00). The WREN bit must
be set (EECON1<2> = 1) to enable writes of any sort
and this must be done prior to initiating a write
sequence. The write sequence is initiated by setting the
WR bit (EECON1<1> = 1).
The write begins on the falling edge of the 4th PGC
after the WR bit is set. It ends when the WR bit is
cleared by hardware.
After the programming sequence terminates, PGC must
still be held low for the time specified by parameter P10
to allow high-voltage discharge of the memory array.
The ID locations are programmed much like the code
memory. The ID registers are mapped in addresses
200000h through 200007h. These locations read out
normally even after code protection.
Note:The user only needs to fill the first 8 bytes
of the write buffer in order to write the ID
locations.
TABLE 3-8:WRITE ID SEQUENCE
4-Bit
Command
Step 1: Direct access to code memory and enable writes.
0E 20
6E F8
0E 00
6E F7
0E 00
6E F6
<MSB><LSB>
<MSB><LSB>
<MSB><LSB>
<MSB><LSB>
00 00
BSF EECON1, EEPGD
BCF EECON1, CFGS
MOVLW 20h
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPTRH
MOVLW 00h
MOVWF TBLPTRL
Write 2 bytes and post-increment address by 2.
Write 2 bytes and post-increment address by 2.
Write 2 bytes and post-increment address by 2.
Write 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
Table 3-8 demonstrates the code sequence required to
write the ID locations.
In order to modify the ID locations, refer to the methodology described in Section 3.2.1 “Modifying CodeMemory”. As with code memory, the ID locations must
be erased before being modified.
The code sequence detailed in Table 3-5 should be
used, except that the address used in “Step 2” will be in
the range of 000000h to 0007FFh.
3.6Configuration Bits Programming
Unlike code memory, the configuration bits are
programmed a byte at a time. The Table Write, Begin
Programming 4-bit command (‘1111’) is used, but only
8 bits of the following 16-bit payload will be written. The
LSB of the payload will be written to even addresses and
the MSB will be written to odd addresses. The code
sequence to program two consecutive configuration
locations is shown in Table 3-9.
Note:The address must be explicitly written for
each byte programmed. The addresses
can not be incremented in this mode.
TABLE 3-9:SET ADDRESS POINTER TO CONFIGURATION LOCATION
4-Bit
Command
Step 1: Enable writes and direct access to config memory.
0000
0000
(1)
Step 2
Note 1:Enabling the write protection of configuration bits (WRTC = 0 in CONFIG6H) will prevent further writing of configuration
: Set Table Pointer for config byte to be written. Write even/odd addresses.
bits. Always write all the configuration bits before enabling the write protection for configuration bits.
Data PayloadCore Instruction
8E A6
8C A6
0E 30
6E F8
0E 00
6E F7
0E 00
6E F6
<MSB ignored><LSB>
00 00
0E 01
6E F6
<MSB><LSB ignored>
00 00
BSF EECON1, EEPGD
BSF EECON1, CFGS
MOVLW 30h
MOVWF TBLPTRU
MOVLW 00h
MOVWF TBLPRTH
MOVLW 00h
MOVWF TBLPTRL
Load 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
MOVLW 01h
MOVWF TBLPTRL
Load 2 bytes and start programming.
NOP - hold PGC high for time P9 and low for time P10.
4.1Read Code Memory, ID Locations
and Configuration Bits
Code memory is accessed one byte at a time via the
4-bit command, ‘1001’ (table read, post-increment).
The contents of memory pointed to by the Table Pointer
(TBLPTRU:TBLPTRH:TBLPTRL) are serially output on
PGD.
TABLE 4-1:READ CODE MEMORY SEQUENCE
4-Bit
Command
Step 1: Set Table Pointer.
0000
0000
0000
0000
0000
0000
Step 2: Read memory and then shift out on PGD, LSb to MSb.
100100 00TBLRD *+
Data PayloadCore Instruction
0E <Addr[21:16]>
6E F8
0E <Addr[15:8]>
6E F7
0E <Addr[7:0]>
6E F6
The 4-bit command is shifted in LSb first. The read is
executed during the next 8 clocks, then shifted out on
PGD during the last 8 clocks, LSb to MSb. A delay of
P6 must be introduced after the falling edge of the 8th
PGC of the operand to allow PGD to transition from an
input to an output. During this time, PGC must be held
low (see Figure 4-1). This operation also increments
the Table Pointer by one, pointing to the next byte in
code memory for the next read.
This technique will work to read any memory in the
000000h to 3FFFFFh address space, so it also applies
to the reading of the ID and Configuration registers.
The verify step involves reading back the code memory
space and comparing it against the copy held in the
programmer’s buffer. Memory reads occur a single byte
at a time, so two bytes must be read to compare
against the word in the programmer’s buffer. Refer to
Section 4.1 “Read Code Memory, ID Locations and
Configuration Bits” for implementation details of
reading code memory.
FIGURE 4-2:VERIFY CODE MEMORY FLOW
Start
Set TBLPTR = 0
Read Low Byte
with Post-increment
The Table Pointer must be manually set to 200000h
(base address of the ID locations) once the code
memory has been verified. The post-increment feature
of the table read 4-bit command may not be used to
increment the Table Pointer beyond the code memory
space. In a 64-Kbyte device, for example, a
post-increment read of address FFFFh will wrap the
Table Pointer back to 000000h, rather than point to
unimplemented address 010000h.
A configuration address may be read and output on
PGD via the 4-bit command, ‘1001’. Configuration data
is read and written in a byte-wise fashion, so it is not
necessary to merge two bytes into a word prior to a
compare. The result may then be immediately
compared to the appropriate configuration data in the
programmer’s memory for verification. Refer to
Section 4.1 “Read Code Memory, ID Locations and
Configuration Bits” for implementation details of
reading configuration data.
4.4Read Data EEPROM Memory
Data EEPROM is accessed one byte at a time via an
address pointer (register pair EEADRH:EEADR) and a
data latch (EEDATA). Data EEPROM is read by loading
EEADRH:EEADR with the desired memory location
and initiating a memory read by appropriately configuring the EECON1 register. The data will be loaded into
EEDATA, where it may be serially output on PGD via
the 4-bit command, ‘0010’ (Shift Out Data Holding
register). A delay of P6 must be introduced after the
falling edge of the 8th PGC of the operand to allow
PGD to transition from an input to an output. During this
time, PGC must be held low (see Figure 4-4).
The command sequence to read a single byte of data
is shown in Table 4-2.
FIGURE 4-3:READ DATA EEPROM
FLOW
Start
Set
Address
Read
Byte
Move to TABLAT
Shift Out Data
No
Done?
Yes
Done
TABLE 4-2:READ DATA EEPROM MEMORY
4-Bit
Command
Step 1: Direct access to data EEPROM.
0000
0000
Step 2: Set the data EEPROM address pointer.
0000
0000
0000
0000
Step 3: Initiate a memory read.
000080 A6BSF EECON1, RD
Step 4: Load data into the Serial Data Holding register.
0000
0000
0000
0010
Note 1:The <LSB> is undefined. The <MSB> is the data.
FIGURE 4-4:SHIFT OUT DATA HOLDING REGISTER TIMING (0010)
PGC
PGD
1234
0100
1234
P5
PGD = Input
5678
4.5Verify Data EEPROM
A data EEPROM address may be read via a sequence
of core instructions (4-bit command, ‘0000’) and then
output on PGD via the 4-bit command, ‘0010’ (TABLAT
register). The result may then be immediately
compared to the appropriate data in the programmer’s
memory for verification. Refer to Section 4.4 “ReadData EEPROM Memory” for implementation details of
reading data EEPROM.
4.6Blank Check
The term “Blank Check” means to verify that the device
has no programmed memory cells. All memories must
be verified: code memory, data EEPROM, ID locations
and configuration bits. The device ID registers
(3FFFFEh:3FFFFFh) should be ignored.
A “blank” or “erased” memory cell will read as a ‘1’.
Therefore, Blank Checking a device merely means to
verify that all bytes read as FFh except the configuration bits. Unused (reserved) configuration bits will
read ‘0’ (programmed). Refer to Table 5-1 for blank
configuration expect data for the various PIC18F2XX0/
2X21/2XX5/4XX0/4X21/4XX5 devices.
Given that Blank Checking is merely code and data
EEPROM verification with FFh expect data, refer to
Section 4.4 “Read Data EEPROM Memory” and
Section 4.2 “Verify Code Memory and ID Locations”
The PIC18F2XX0/2X21/2XX5/4XX0/4X21/4XX5
devices have several Configuration Words. These bits
can be set or cleared to select various device
configurations. All other memory areas should be
programmed and verified prior to setting Configuration
Words. These bits may be read out normally, even after
read or code protection. See Table 5-1 for a list of
5.2Device ID Word
The device ID word for the PIC18F2XX0/2X21/2XX5/
4XX0/4X21/4XX5 devices is located at
3FFFFEh:3FFFFFh. These bits may be used by the
programmer to identify what device type is being
programmed and read out normally, even after code or
read protection. See Table 5-2 for a complete list of
device ID values.
configuration bits and device IDs and Table 5-3 for the
configuration bit descriptions.
5.1ID Locations
A user may store identification information (ID) in eight
FIGURE 5-1:READ DEVICE ID WORD FLOW
Start
Set TBLPTR = 3FFFFE
ID locations mapped in 200000h:200007h. It is recommended that the Most Significant nibble of each ID be
Fh. In doing so, if the user code inadvertently tries to
Read Low Byte
with Post-Increment
execute from the ID space, the ID data will execute as
a NOP.
2:Implemented in PIC18F2221/2321/4221/4321 and PIC18F2585/2680/4585/4680 devices only.
3:Implemented in PIC18F2221/2321/4221/4321 and PIC18F2480/2580/4480/4580 devices only.
4:Implemented in PIC18F4221/4321 devices only.
5:These bits are only implemented on specific devices. Refer to Section 2.3 “Memory Maps” to determine which bits apply based on
available memory.
6:In PIC18F2480/2580/4480/4580 devices, this bit is read-only in normal execution mode; it can be written only in Program mode.
7:DEVID registers are read-only and cannot be programmed by the user.
8:Implemented in all devices with the exception of the PIC18F2480/2580/4480/4580 and PIC18F2585/2680/4585/4680 devices.
11xx = External RC oscillator, CLKO function on RA6
101x = External RC oscillator, CLKO function on RA6
1001 = Internal RC oscillator, CLKO function on RA6, port function on RA7
1000 = Internal RC oscillator, port function on RA6, port function on RA7
0111 = External RC oscillator, port function on RA6
0110 = HS oscillator, PLL enabled (clock frequency = 4 x FOSC1)
0101 = EC oscillator, port function on RA6
0100 = EC oscillator, CLKO function on RA6
0011 = External RC oscillator, CLKO function on RA6
0010 = HS oscillator
0001 = XT oscillator
0000 = LP oscillator
111X = HS oscillator, PLL enabled , HS used by USB
110X = HS oscillator, HS used by USB
1011 = Internal oscillator, HS used by USB
1010 = Internal oscillator, XT used by USB
1001 = Internal oscillator, CLKO function on RA6, EC used by USB
1000 = Internal oscillator, port function on RA6, EC used by USB
0111 = EC oscillator, PLL enabled, CLKO function on RA6, EC used by USB
0110 = EC oscillator, PLL enabled, port function on RA6, EC used by USB
0101 = EC oscillator, CLKO function on RA6, EC used by USB
0100 = EC oscillator, port function on RA6, EC used by USB
001X = XT oscillator, PLL enabled, XT used by USB
000X = XT oscillator, XT used by USB
Selects the clock source for full speed USB operation:
1 = USB clock source comes from the 96 MHz PLL divided by 2
0 = USB clock source comes directly from the OSC1/OSC2 oscillator block;
no divide
CONFIG1LCPU System Clock Selection bits (PIC18F2455/2550/4455/4550 devices only)
11 = CPU system clock divided by 4
10 = CPU system clock divided by 3
01 = CPU system clock divided by 2
00 = No CPU system clock divide
The LVP bit in Configuration register, CONFIG4L,
enables Single-Supply (Low-Voltage) ICSP Programming. The LVP bit defaults to a ‘1’ (enabled) from the
factory.
If Single-Supply Programming mode is not used, the
LVP bit can be programmed to a ‘0’ and RB5/PGM
becomes a digital I/O pin. However, the LVP bit may only
be programmed by entering the High-Voltage ICSP
mode, where MCLR
the LVP bit is programmed to a ‘0’, only the High-Voltage
ICSP mode is available and only the High-Voltage ICSP
mode can be used to program the device.
Note 1: The High-Voltage ICSP mode is always
available, regardless of the state of the
LVP bit, by applying VIHH to the MCLR/
V
2: While in Low-Voltage ICSP mode, the
RB5 pin can no longer be used as a
general purpose I/O.
/VPP/RE3 is raised to VIHH. Once
PP/RE3 pin.
5.4Embedding Configuration Word
Information in the HEX File
To allow portability of code, a PIC18F2XX0/2X21/
2XX5/4XX0/4X21/4XX5 programmer is required to
read the Configuration Word locations from the hex file.
If Configuration Word information is not present in the
hex file, then a simple warning message should be
issued. Similarly, while saving a hex file, all Configuration Word information must be included. An option to
not include the Configuration Word information may be
provided. When embedding Configuration Word
information in the hex file, it should start at address
300000h.
Microchip Technology Inc. feels strongly that this
feature is important for the benefit of the end customer.
5.5Embedding Data EEPROM
Information In the HEX File
To allow portability of code, a PIC18F2XX0/2X21/
2XX5/4XX0/4X21/4XX5 programmer is required to
read the data EEPROM information from the hex file. If
data EEPROM information is not present, a simple
warning message should be issued. Similarly, when
saving a hex file, all data EEPROM information must be
included. An option to not include the data EEPROM
information may be provided. When embedding data
EEPROM information in the hex file, it should start at
address F00000h.
Microchip Technology Inc. believes that this feature is
important for the benefit of the end customer.
5.6Checksum Computation
The checksum is calculated by summing the following:
• The contents of all code memory locations
• The Configuration Words, appropriately masked
• ID locations (if any block is code-protected)
The Least Significant 16 bits of this sum is the
checksum. The contents of the data EEPROM are not
used.
5.6.1PROGRAM MEMORY
When program memory contents are summed, each
16-bit word is added to the checksum. The contents of
program memory from 000000h to the end of the last
program memory block are used for this calculation.
Overflows from bit 15 may be ignored.
5.6.2CONFIGURATION WORDS
For checksum calculations, unimplemented bits in
Configuration Words should be ignored as such bits
always read back as ‘1’s. Each 8-bit Configuration
Word is ANDed with a corresponding mask to prevent
unused bits from affecting checksum calculations.
The mask contains a ‘0’ in unimplemented bit positions,
or a ‘1’ where a choice can be made. When ANDed
with the value read out of a Configuration Word, only
implemented bits remain. A list of suitable masks is
provided in Table 5-5.
5.6.3ID LOCATIONS
Normally, the contents of these locations are defined by
the user, but MPLAB
the device’s unprotected 16-bit checksum in the 16 Most
Significant bits of the ID locations (see MPLAB IDE
“Configure/ID Memory” menu). The lower 16 bits are not
used and remain clear. This is the sum of all program
memory contents and Configuration Words
(appropriately masked) before any code protection is
enabled.
If the user elects to define the contents of the ID locations, nothing about protected blocks can be known. If
the user uses the preprotected checksum provided by
MPLAB IDE, an indirect characteristic of the
programmed code is provided.
5.6.4CODE PROTECTION
Blocks that are code-protected read back as all ‘0’s and
have no effect on checksum calculations. If any block
is code-protected, then the contents of the ID locations
are included in the checksum calculation.
All Configuration Words and the ID locations can
always be read out normally, even when the device is
fully code-protected. Checking the code protection settings in Configuration Words can direct which, if any, of
the program memory blocks can be read and if the ID
locations should be used for checksum calculations.
6.0AC/DC CHARACTERISTICS TIMING REQUIREMENTS
FOR PROGRAM/VERIFY TEST MODE
Standard Operating Conditions
Operating Temperature: 25°C is recommended
Param
D110V
D110A V
SymCharacteristicMinMaxUnitsConditions
No.
IHHHigh-Voltage Programming Voltage on
MCLR
/VPP/RE3
IHLLow-Voltage Programming Voltage on
MCLR
/VPP/RE3
DD + 4.012.5V(Note 2)
V
2.005.50V(Note 2)
D111V DDSupply Voltage During Programming2.005.50VSelf-timed
4.505.50VExternally timed
4.505.50VBulk Erase operations
D112I
D113I
D031 V
D041 V
PPProgramming Current on MCLR/VPP/RE3—300μA(Note 2)
DDPSupply Current During Programming—10mA
ILInput Low VoltageVSS0.2 VDDV
IHInput High Voltage0.8 VDDVDDV
D080 VOLOutput Low Voltage—0.6VIOL = 8.5 mA @ 4.5V
D090 V
OHOutput High VoltageVDD – 0.7—VIOH = -3.0 mA @ 4.5V
D012 CIOCapacitive Loading on I/O pin (PGD)—50pFTo meet AC specifications
P1T
RMCLR/VPP/RE3 Rise Time to Enter
—1.0μs(Note 1, 2)
Program/Verify mode
P2T
PGCSerial Clock (PGC) Period100—nsVDD = 5.0V
1—μsVDD = 2.0V
P2AT
PGCL Serial Clock (PGC) Low Time40—nsVDD = 5.0V
400—nsVDD = 2.0V
P2BT
PGCH Serial Clock (PGC) High Time40—nsVDD = 5.0V
400—nsVDD = 2.0V
P3T
SET1 Input Data Setup Time to Serial Clock ↓15—ns
P4THLD1 Input Data Hold Time from PGC ↓15—ns
P5T
DLY1 Delay between 4-bit Command and Command
40—ns
Operand
P5AT
DLY1A Delay between 4-bit Command Operand and Next
40—ns
4-bit Command
P6T
DLY2 Delay between Last PGC ↓ of Command Byte to
20—ns
First PGC ↑ of Read of Data Word
P9T
P10TDLY6 PGC Low Time after Programming
DLY5 PGC High Time (minimum programming time)1—msExternally Timed
100—μs
(high-voltage discharge time)
P11T
DLY7 Delay to allow Self-Timed Data Write or
5—ms
Bulk Erase to occur
P11AT
Note 1:Do not allow excess time when transitioning MCLR
DRWT Data Write Polling Time4—ms
between VIL and VIHH; this can cause spurious program
executions to occur. The maximum transition time is:
1 TCY + TPWRT (if enabled) + 1024 TOSC (for LP, HS, HS/PLL and XT modes only) +
2 ms (for HS/PLL mode only) + 1.5 μs (for EC mode only)
where TCY is the instruction cycle time, TPWRT is the Power-up Timer period and TOSC is the oscillator period. For
specific values, refer to the Electrical Characteristics section of the device data sheet for the particular device.
2:When ICPORT = 1, this specification also applies to ICV
6.0AC/DC CHARACTERISTICS TIMING REQUIREMENTS
FOR PROGRAM/VERIFY TEST MODE (CONTINUED)
Standard Operating Conditions
Operating Temperature: 25°C is recommended
Param
P12THLD2 Input Data Hold Time from MCLR/VPP/RE3 ↑2—μs
P13T
P14T
P15T
P16T
P17T
P18T
Note 1:Do not allow excess time when transitioning MCLR
SymCharacteristicMinMaxUnitsConditions
No.
SET2VDD↑ Setup Time to MCLR/VPP/RE3 ↑100—ns(Note 2)
VALID Data Out Valid from PGC ↑10—ns
SET3PGM ↑ Setup Time to MCLR/VPP/RE3 ↑2—μs(Note 2)
DLY8 Delay between Last PGC ↓ and MCLR/VPP/RE3 ↓0—s
HLD3MCLR/VPP/RE3 ↓ to VDD↓—100ns
HLD4MCLR/VPP/RE3 ↓ to PGM ↓0—s
between VIL and VIHH; this can cause spurious program
executions to occur. The maximum transition time is:
1 TCY + TPWRT (if enabled) + 1024 TOSC (for LP, HS, HS/PLL and XT modes only) +
2 ms (for HS/PLL mode only) + 1.5 μs (for EC mode only)
where TCY is the instruction cycle time, TPWRT is the Power-up Timer period and TOSC is the oscillator period. For
specific values, refer to the Electrical Characteristics section of the device data sheet for the particular device.
2:When ICPORT = 1, this specification also applies to ICV
Note the following details of the code protection feature on Microchip devices:
•Microchip products meet the specification contained in their particular Microchip Data Sheet.
•Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•Microchip is willing to work with the customer who is concerned about the integrity of their code.
•Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
MERCHANTABILITY OR FITNESS FOR PURPOSE.
Microchip disclaims all liability arising from this information and
its use. Use of Microchip’s products as critical components in
life support systems is not authorized except with express
written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
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