MegaPower MI3461 Schematic [ru]

P-Channel 60V (D-S)MOSFET

MI3461

General Description

This miniature surface mount MOSFET uses advanced
Trench process,low RDS(ON) assures minimal power

lo ss an d en ergy conv ert, which make s th is de vice
ideal f or u se i n p ower m anagement c ircuit.

Applications

Load switch
DC-DC c onv ert ers

Power management

D

S

G

SOT23

Features

VD S (V) = -60V

ID (A) = -2.7A (VGS = - 10V )

RD S(on) = 110 mΩ @ VGS = - 10V

RD S(on) = 160 mΩ @ VGS = -4.5V

Low gate charge

Fast switching speed

High performance trench techn olo gy

D

G

S

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Current (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Temperature Range

a

b

a

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

θ

R JA

Maximum Junction-to-Ambient

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

-60

±20

-2.7

-2.2

V

A

-11

-1.0

1. 4

1. 0

-55 to 150

Maximum

90

130

Feb.20 12 Re v.2.0

A

W

℃

Units

℃/W

Package Outlines and Ordering Information

Device

MI3461

Device Marking

S60P

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

c

Drain-Source On-Resistanc e

Forward Tranconductance

c

Diode Forward Voltage

Dynamic

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

Test Conditions

VG S=0V,ID=-250uA

VD S =VGS,ID = -250 u A

VD S=0V,VGS=±20 V

VDS=-60V,VGS=0V

VDS=-60V,VGS=0V,TJ=55℃

ID (on)

VDS=-20V,VGS=-4.5V

VGS=-10V,ID=-3.5A

c

RD S(on )

g

fs

VS D

VGS =-4. 5 V, ID=-2.0A

VD S=-5V,ID =-3.5A

IS =-1.0A,VGS=0V

Tape Width

8mm

Limits

Min Typ Max

-60

-1.0 -2.0

-11

88

120

12

-0.8

Quantity

3000 units

-3.0

±100

-1

-10

110

160

-1.2

MI3461

Units

V

nA

uA

A

mΩ

S

V

Input Capicitance

Output capacitance

Reverse Tra nsf er Ca pac ita nce

Ci ss

Co ss

Cr ss

VD S =-30,VGS =0V
f=1MHz

Switching

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Notes: a. Surfa ce Mo unted on 1” x 1 ” FR4 Board .
b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

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Qg

Qg s

Qg d

td (on)

tr

td (off)

tf

VD S=-30V,VGS=- 10V

VDS=-30V, ID=-1.0A,

RG=6 ohm,VGEN=-4.5V

ID =-2.7A

2

745

69

42

13.5

1. 5

3. 2

12

12

65.8

22

pF

nC

ns

Feb.20 12 Re v.2.0