MegaPower MI3446 Schematic [ru]

N- Channel 40V (D- S)MOSFET

MI3446

General Description

Thi s min iature surface mount MOSFET use s adv anced
Trenc h proce ss ,l ow R DS( ON ) as su res mi nimal

power loss and energy conversion, which makes this
device i deal f or u se i n p ower m anagement c ircuit.

Applications

Load switch
DC-DC c onv ert ers

Power management

Features

VD S(V)=40V

ID (A)=5. 0A (VGS=10V)

RD S(ON )=31 mΩ @ VGS =10V

RD S(ON )=45 mΩ @ VGS = 4.5V

Low gate charge

Fast switching speed

High performance trench techn olo gy fo r ext rem ely

low RDS(ON)

High power and current handl ing c apa bil ity

Absolute Maximum Ratings (TA = 25℃ Unless Otherwise Not ed)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Continuous Source Curren t (Di ode C ond uct ion )

Power Dissipation

Operating Junction and Storag e Te mpe rat ure R ang e

a

b

a

a

TA =25℃

TA =70℃

TA =25℃

TA =70℃

Symbol

VD S

VG S

ID

ID M

IS

PD

TJ ,Tstg

Thermal Resistance Ratings

Symbol

Rθ JA

Maximum Junction-to-Ambie nt

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Parameter

a

t<= 10 sec

Steady-State

1

Maximum Units

40

±20

5.0

4.0

20

3.5

1.4

1.0

-55 to 150

Maximum

90

130

Feb.2012 Rev.2.0

V

A

A

W

℃

Units

℃/W

Ordering Information

Device

MI3446

Device Marking

S40N

Reel Size

7’’

Specifications (TA = 25℃ Unless Otherwise Noted)

Tape Width

8mm

MI3446

Quantity

3000 units

Parameter

Static

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Body Leakage

Zero Gate Voltage Drain Current

On-State Drain Current

Drain-Source On-Resistance

Forward Tranconductance

c

c

c

Diode Forward Voltage

Dynamic

Input Capacitance

Output Capacitance

Reverse Tra nsf er Ca pac ita nce

Gate Resistance

Switching

Total Gate Charge(10 V)

Total Gate Charge(4. 5V)

Gate-Source Charge

Gate-Drain Charge

Tur n-O n Del ay Tim e

Rise Time

Tur n-O ff Delay Time

Fall-Time

Body Diode Reverse Recover y Time

Body Diode Reverse Recover y Cha rge

Symbol

V( BR)D SS

VG S(th )

IG SS

ID SS

ID (on)

RD S(o n)

g

fs

VS D

Ci ss

Co ss

Cr ss

Rg

Qg(10V)

Qg(4.5V)

Qgs

Qgd

td (on)

tr

td (off)

tf

tr r

Qr r

Test Conditions

VG S=0V, ID=250uA

VDS =VGS,ID = 250 uA

VD S=0V, VGS =±20V

VDS=32V,VGS=0V

VDS=32V,VGS=0V,TJ=55℃

VDS=5V,VGS=10V

VG S=4.5 V, ID= 3. 0A

VGS =10 V, ID =5. 0A

VD S=20V,ID =5. 0A

IS =1. 0A, VGS =0V

VG S=0V,V DS=20V,
f=1MHz

VG S=0V,V DS=0V,f=1MHz

VD S=20V,VG S=10 V

ID =5.0 A

VDD=20V, ID=1A,

RG=6 ohm,VGEN=10V

RL=15 ohm

If =-5A,di/dt=100A/us

If =-5A,di/dt=100A/us

Limits

Min Typ Max

40

1. 0 2. 3 3. 0

±100

1

5

20

32

22

45

31

23

0. 77

1. 0

404

95

37

2. 7

12.8

7

1. 9

3. 5

4. 3

3. 4

15

2. 8

21

15

Units

V

nA

uA

A

mΩ

S

V

pF

Ω

nC

ns

ns

nC

Notes: a . Sur face Moun ted on 1” x 1” FR 4 Boa rd.
b. Pulse w idt h limited b y maximum j unc tion temp erature

c. Pulse t est : PW <= 300us d uty cycle < = 2%.

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2

Feb.2012 Rev.2.0