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PRELIMINAR
DS1100L
3.3V 5-Tap Economy Timing
Element (Delay Line)
FEATURES
§ All-Silicon Timing Circuit
§ Five Taps Equally Spaced
§ Delays are Stable and Precise
§ Both Leading- and Trailing-Edge Accuracy
§ 3.3V Version of the DS1100
§ Low-Power CMOS
§ TTL-/CMOS-compatible
§ Vapor-Phase and IR Solderable
§ Custom Delays Available
§ Fast-Turn Prototypes
§ Delays Specified Over Both Commercial and
Industrial Temperature Ranges
PIN ASSIGNMENT
IN
TAP 2
TAP 4
GND
1
2
3
4
DS1100LZ SO (150mil)
DS1100LU µSOP
8
7
6
5
V
CC
TAP 1
TAP 3
TAP 5
PIN DESCRIPTION
TAP 1 to TAP 5 - TAP Output Number
V
CC
GND - Ground
IN - Input
- +3.3V
DESCRIPTION
The DS1100L is a 3.3V version of the DS1100. It is characterized for operation over the range 3.0V to
3.6V. The DS1100L series delay lines have five equally spaced taps providing delays from 4ns to 500ns.
These devices are offered in surface-mount packages to save PC board area. Low cost and superior
reliability over hybrid technology is achieved by the combination of a 100% silicon delay line and
industry-standard µSOP and SO packaging. The DS1100L 5-tap silicon delay line reproduces the inputlogic state at the output after a fixed delay as specified by the extension of the part number after the dash.
The DS1100L is designed to reproduce both leading and trailing edges with equal precision. Each tap is
capable of driving up to ten 74LS loads.
Dallas Semiconductor can customize standard products to meet special needs.
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Figure 1. LOGIC DIAGRAM
.
Table 1. DS1100L PART NUMBER DELAY TABLE (All Values in ns)
PART
DS1100L-XXX
-20 4 8 12 16 20
-25 5 10 15 20 25
-30 6 12 18 24 30
-35 7 14 21 28 35
-40 8 16 24 32 40
-45 9 18 27 36 45
-501020304050
-601224364860
-751530456075
-100 20 40 60 80 100
-125 25 50 75 100 125
-150 30 60 90 120 150
-175 35 70 105 140 175
-200 40 80 120 160 200
-250 50 100 150 200 250
-300 60 120 180 240 300
-500 100 200 300 400 500
TAP 1 TAP 2 TAP 3 TAP 4 TAP 5
NOMINAL DELAYS
DS1100L
Figure 2. TIMING DIAGRAM: SILICON DELAY LINE
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DS1100L
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground -0.5V to +6.0V
Operating Temperature Range -40°C to +85°C
Storage Temperature Range -55°C to +125°C
Soldering Temperature See IPC/JEDEC J-STD-020A Specification
Short-Circuit Output Current 50mA for 1 second
*This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
= 3.0V to 3.6V; TA = -40°C to +85°C.)
(V
CC
PARAMETER SYM TEST CONDITION MIN TYP MAX UNITS NOTES
Supply Voltage V
High-Level
Input Voltage
Low-Level
Input Voltage
Input-Leakage
Current
Active Current I
High-Level
Output Current
Low-Level
Output Current
V
V
CC
IH
IL
I
CC
I
OH
I
OL
0.0V £ VI £ V
I
V
V
V
CC
= Max; Freq. = 1MHz 10 mA 6, 8
CC
= Min. V
CC
= Min. V
CC
= 2.3 -1 mA
OH
= 0.5 8 mA
OL
3.0 3.3 3.6 V 5
2.0
VCC +
0.3
V5
-0.3 0.8 V 5
-1.0 1.0 µA
AC ELECTRICAL CHARACTERISTICS
= 3.0V to 3.6V; TA = -40°C to +85°C.)
(V
CC
PARAMETER SYM TEST CONDITION MIN TYP MAX UNITS NOTES
Input
Pulse Width
Input-to-Tap
Delay Tolerance
(Delays £ 40ns)
Input-to-Tap
Delay Tolerance
(Delays > 40ns)
Output Rise or
Fall Time
t
OF
Power-Up Time t
t
t
PLH,
t
PHL
t
PLH,
t
PHL
WI
, t
PU
+25°C 3.3V -2 Table 1 +2 ns 1, 3, 4, 7
0°C to +70°C -3 Table 1 +3 ns 1, 2, 3, 4, 7
-40°C to +85°C -4 Table 1 +4 ns 1, 2, 3, 4, 7
+25°C 3.3V -5 Table 1 +5 % 1, 3, 4, 7
0°C to +70°C -8 Table 1 +8 % 1, 2, 3, 4, 7
-40°C to +85°C -13 Table 1 +13 % 1, 2, 3, 4, 7
OR
20% of
Tap 5
t
PLH
ns 9
2.0 2.5 ns
200 µs
Input Period Period 2(tWI)ns9
CAPACITANCE (TA = +25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Input Capacitance C
IN
510 pF
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DS1100L
NOTES:
1) Initial tolerances are ± with respect to the nominal value at +25°C and VCC = 3.3V for both leading
and trailing edge.
2) Temperature and voltage tolerance is with respect to the nominal delay value over the stated
temperature range, and a supply-voltage range of 3.0V to 3.6V.
3) All tap delays tend to vary unidirectionally with temperature or voltage changes. For example, if TAP
1 slows down, all other taps also slow down; TAP3 can never be faster than TAP2.
4) Intermediate delay values are available on a custom basis. For further information, call (972) 371-
4348.
5) All voltages are referenced to ground.
6) Measured with outputs open.
7) See Test Conditions section at the end of this data sheet.
8) Frequency higher than 1MHz result in higher ICC values.
9) At or near maximum frequency the delay accuracy can vary and will be application sensitive (i.e.,
decoupling, layout).
Figure 3. TEST CIRCUIT
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DS1100L
TERMINOLOGY
Period: The time elapsed between the leading edge of the first pulse and the leading edge of the
following pulse.
tWI (Pulse Width): The elapsed time on the pulse between the 1.5V point on the leading edge and the
1.5V point on the trailing edge or the 1.5V point on the trailing edge and the 1.5V point on the leading
edge.
(Input Rise Time): The elapsed time between the 20% and the 80% point on the leading edge of the
t
RISE
input pulse.
t
(Input Fall Time): The elapsed time between the 80% and the 20% point on the trailing edge of the
FALL
input pulse.
t
(Time Delay, Rising): The elapsed time between the 1.5V point on the leading edge of the input
PLH
pulse and the 1.5V point on the leading edge of any tap output pulse.
t
(Time Delay, Falling): The elapsed time between the 1.5V point on the trailing edge of the input
PHL
pulse and the 1.5V point on the trailing edge of any tap output pulse.
TEST SETUP DESCRIPTION
Figure 3 illustrates the hardware configuration used for measuring the timing parameters on the
DS1100L. The input waveform is produced by a precision pulse generator under software control. Time
delays are measured by a time interval counter (20ps resolution) connected between the input and each
tap. Each tap is selected and connected to the counter by a VHF switch control unit. All measurements
are fully automated, with each instrument controlled by a central computer over an IEEE 488 bus.
TEST CONDITIONS INPUT:
Ambient Temperature: 25°C ±3°C
Supply Voltage (VCC): 3.3V ±0.1V
Input Pulse: High = 3.0V ± 0.1V
Low = 0.0V ± 0.1V
Source Impedance: 50W max
Rise and Fall Time: 3.0ns max (measured between 10% and 90%)
Pulse Width: 500ns (1µs for -500 version)
Period: 1µs (2µs for -500 version)
OUTPUT:
Each output is loaded with the equivalent of one 74F04 input gate. Delay is measured at the 1.5V level on
the rising and falling edge.
NOTE:
Above conditions are for test only and do not restrict the operation of the device under other data sheet
conditions.
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ORDERING INFORMATION
DS1100L
DS1100L
TOTAL TIME DELAY (ns): 20,
25, 30, 35, 40, 45, 50, 60, 75,
100, 125, 150, 175, 200, 250,
300, 500
PACKAGE TYPE:
Z = SO (150MIL)
U = µSOP
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