M A COM MAAPSM0015 Datasheet

DC-20 GHz GaAs MMIC Amplifier

Preliminary

Rev. 2.0

MAAPSM0015

Features

¢ Wide Frequency Range: DC-20 GHz
¢ On Chip Bias Network
¢ High Gain : 11 dB
¢ Gain Flatness: + 0.75 dB
¢ Typical Psat: 21 dBm
¢ Return Loss: 12 dB
¢ Low Bias Current : 100mA

2.0 mm

Description

The M/A-COM MAAPSM0015 is a medium power
wideband AGC amplifier that typically provides 11 dB
of gain with 25 dB of AGC range. The circuit topology
is a six -section traveling wave amplifier using common
source FETs which provide very wide bandwidth.
Typical input and output return loss is 12 dB. RF ports
are DC coupled, enabling the user to customize sys­tem corner frequencies. DC bias can be provided
through the drain termination resistor without the need
for an external bias inductor. For higher power appli­cations, an external inductor can be used to bias the
amplifier through the RFout or Vd_aux pads. Applica­tions include OC-192 12.5 GBit/s receive AGC ampl i­fier and lithium niobate Mach-Zehnder modulator driver
amplifer.

The MAAPSM0015 requires off-chip decoupling and
blocking compo nents. Each device is 100% DC and
RF tested on wafer to ensure performance compliance.
The device is provided in chip form. M/A-Com fabri­cates the MAAPSM0015 using a 0.5 µm gate length
low noise multi-function self aligned gate (MSAG)
MESFET process. This process features silicon nitride
passivation and polimide scratch protection. The die
thickness is 0.003”.

DC-20 GHz GaAs MMIC Amplifier

3.0 mm

Primary Applications

¢ 12.5GBit OC-192 LN/MZ Driver
¢ 12.4GBit OC-192 AGC Receiver
¢ SONET/SDH

Electrical Characteristics

8V, 100 mA

Parameter Typ Units

Bandwidth DC-20 GHz

Gain 11 dB

Gain Flatness + 0.75 dB

Input Return Loss -12 dB

Output Return Loss -12 dB

Reverse Isolation >-13 dB

P

(+8V, 100 mA) 21 dBm

sat

Noise Figure 7 dB

DC-20 GHz GaAs MMIC Amplifier

14

0

0

25

Vds=8V, Id=100mA

Noise Figure (dB)

DC-20GHz Carrier-Mounted Performance Vds = 8,0V, Ids = 50, 70, 100mA

MAAPSM0015

Preliminary

12

10

100 mA

70 mA

S21 (dB)

8

50 mA

6

4

0 5 10 15 20

Frequency (GHz)

-5

-10

70 mA

50 mA

-15

S22 (dB)

-20

-25

-30
0 5 10 15 20

100 mA

Frequency (GHz)

-5

-10

70 mA

100 mA

-15

S11 (dB)

-20

-25

-30
0 5 10 15 20

50 mA

Frequency (GHz)

DC-20GHz Wafer Probe Data Vds = 8,0V, Ids = 100mA

10

bias through RFout

23

21

19

Psat (dBm)

17

15

bias through Vd

0 5 10 15 20

Frequency (GHz)

Specifications subject to change without notice.

n North America: Tel. [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information. COMPANY CONFIDENTIAL

8

6

4

2

0

0 5 10 15 20

Frequency (GHz)