M A COM MAAPSM0008TR, MAAPSM0008SMB, MAAPSM0008TR-3000 Datasheet

1-Watt Power Amplifier

Vdd

N/C

N/C

N/C

Vgg

MAAPSM0008

5 - 6 GHz

Features

• U-NII and Hiperlan Applications

• Saturated Output Power 30.5 dBm at +7.0 V

• Power Added Efficiency 40 Percent

• No External RF Matching

• 4-mm FQFP -N, 16 -Lead Package

Description

The MAAPSM0008 is a two-stage power amplifier
mounted in a standard outl ine, 16-lead, 4-mm FQFP -N
plastic package, designed specifically for the U-NII,
MMAC, and Hiperlan bands. The MAAPSM0008 has
fully matched 50 ohms input and output, eliminating
the need for external RF tuning components.

M/A-COM fabricates the MAAPSM0008 using a self ­aligned gate MESFET process to realize high power
efficiency and small size. The process features full
passivation for performance and reliability.

MAAPSM0008

Functional Schematic

Pin 16

N/C

Pin 1

RFin

N/C

N/C N/C N/C

V 1.1

N/C

RFout

N/C

N/CN/C

Pin Configuration

Pin Function

1, 3, 4 ,5 ,7,
8, 9, 12, 13,

14, 15, 16

2 RFIN RF input to the amplifier. DC

6 Vdd Positive voltage supply to

10 RF

11 Vgg Negative voltage supply to

Pad GND RF & DC ground

NC No connection

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

Descriptions

block on-chip. 50 ohm input.

both stages

RF output of the amplifier.

OUT

DC block on-chip. 50 Ohm
output.

the gates of both stages

Ordering Information

Part Number Package

MAAPSM0008TR MAAPSM0008 on 7-inch, 1000-piece reel
MAAPSM0008TR-3000 MAAPSM0008 on 13 inch, 3000-piece reel

MAAPSM0008SMB MAAPSM0008 Sample Test Board

1-Watt, 5 GHz Power Amplifier

MAAPSM0008

V 1.1

Electrical Specifications: T

= 40 °C, VDD = 7.0 V, IDQ = 360 mA

C

(unless otherwise specified)

Parameter Test Conditions Units Min. Typ. Max. Typ. @

VDD + 5 V

Frequency GHz 5.0 6.0
Input VSWR F = 5.825 GHz, Pin = +14 dBm 1.5:1 2.0:1 1.5:1
Gain F = 5.825 GHz, Pin = 0 dBm dB 18.0 19.5 19.0
P1dB F = 5.825 GHz dBm 29.5 28.0
Saturated Power F = 5.825 GHz, Pin = +14 dBm dBm 29.5 30.5 29.0
Drain Current at Psat F = 5.825 GHz, Pin = +14 dBm mA 500 600 500
Harmonics 2ƒ

Thermal resistance °C/W 31 31
Third-Order Intercept

Point
Stability +3.0 V < V

3 ƒ

Output Power = 30.5 dBm dBc

dBm 40 38

< +10.0 V, P

dBm, VSWR < 6:1, -25 ºC < TC < 70
ºC, RBW = 3 MHz max. hold

DD

OUT

< +15

dBc

-40

-70

All spurs < -70 dBc

-40

Recommended Operating Conditions

Characteristic Symbol Unit Min Typ Max

Drain Voltage V
Gate Voltage 2 V
Input Power P
Gate Current I

Case Temperature T

DD

GG

IN

GG

C

1

V 4.5 7.0 8.0
V -2.5 -2.0 -1.0

dBm — 15

mA -4 1 +4

°C -40 25 70

-70

1. Operation outside of these ranges may reduce product reliability.

2. A 100 E-Series resistor should be used in the gate voltage line.

Operating The MAAPSM0008

The MAAPSM0008 is static sensitive. Please handle
with care. To operate the device, follow these steps.

1. Apply VGG = -2 V, VDD= 0 V.

2. Ramp VDD to desired voltage, typically 5 to 7 V.

3. Adjust VGG to set IDQ, (approximately –2 V).

4. Set RF input.

5. Power down sequence in reverse. Turn gate

voltage off last.

Specifications subject to change without notice.

n North America: Tel. [phone], Fax [phone]
n Asia/Pacific: Tel.[phone], Fax [phone]
n Europe: Tel. [phone], Fax[phone]

Visit www.macom.com for additional data sheets and product information.

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