M A COM MAAM71200-H1 Datasheet

Low Noise GaAs MMIC Amplifier

7.5 - 12 GHz

F e a t u r e s

●

2.7 dB Typical Noise Figure

●

15.5 dB Typical Gain

●

Single Bias Supply

●

Low Current Consumption

●

DC Decoupled RF Input and Output

●

Ceramic Package

D e s c r i p t i o n

M/A-COM’s MAAM71200-H1 is a wide band, low noise
GaAs MMIC amplifier enclosed in a leadless ceramic
p a c k a g e1. The MAAM71200-H1 is a packaged version of
M/A-COM’s MAAM71200 low noise MMIC amplifier chip.
The fully monolithic design operates in 50 ohms without
the need for external components.

The MAAM71200-H1 is ideally suited for micro s t r i p
assemblies where wire or ribbon bonds are used for inter­connects. Typical applications include radar, EW and
communication systems.

MAAM71200-H1

V 2.00

C R - 1 6

Dimensions are in inches.

The MAAM71200 is fabricated using a mature 0.5-micro n
gate length GaAs process for increased reliability and per­f o rmance re p e a t a b i l i t y .

Typical Electrical Specifications,TA= +25°C,V

Parameter Units Min. Typ. Max.

Gain dB 14.5 15.5
Noise Figure dB 2.7 3.5
Input VSWR 2.0:1
Output VSWR 1.8:1
Output 1dB Compression Point dBm 11
Third Order Intercept Point dBm 21
Reverse Isolation dB 30
Bias Current (IDD) mA 40 55

1.Consult factory for a leaded ceramic package version.

D D

= 4 V

Low Noise GaAs MMIC Amplifier MAAM71200-H1

Pa r a m e t e r Absolute Maximu m

Input Powe r +20 dBm
V

D D

+9 Vo l t s
Junction Te m p e ra t u r e + 1 5 0 ° C
S t o rage Te m p e ra t u r e -65°C to +150°C
T h e rmal Resistance 1 7 5 ° C / W

Absolute Maximum Ratings

1

Typical Pe r formance

Functional Diag r am

1. Operation of this device outside any of these limits may
cause permanent damage

20
18
16
14
12
10

7 8 9 10 11 12 13

FREQUENCY (GHz)

4.0

3.5

3.0

2.5

2.0

1.5

1.0
7 8 9 10 11 12 13

FREQUENCY (GHz)

5
4
3
2
1
0

7 8 9 10 11 12 13

FREQUENCY (GHz)

GAIN vs FREQUENCY

INPUT & OUTPUT vs FREQUENCY

NOISE FIGURE vs FREQUENCY

+100°C

+100°C

-50°C

1. Case must be electrically connected to RF and DC ground.

2.The RF bond inductance from the transmission line to the
package is assumed to be 0.25 nH.Variations in bond

induc- tance will result in variations in VSWR and
gain slope. A small capacitive stub
may be needed depending on the
inductance realized in the final assembly.

3.Nominal bias is obtained by setting VDD= 4 volts.

4.Increasing VDDfrom 4 volts to 6 volts increases output
power and high frequency bandwidth.

+25°C

-50°C

+25°C

V 2.00

Output

Input

OUTPUT POWER @ 1dB COMPRESSION
vs FREQUENCY

15
13
11

9
7
5

7 8 9 10 11 12 13

FREQUENCY (GHz)