M A COM MAAM28000-A1G, MAAM28000-A1 Datasheet

Wide Band GaAs MMIC Amplifier
2-8 GHz MAAM28000-A1

Features

●

High Gain: 17 dB

●

Gain Flatness: ±0.5 dB

●

Single Supply: +10 V

●

No External Components Require d

●

DC Decoupled RF Input and Output

●

Small, Low Cost 8-Lead Ceramic Package

D e s c r i p t i o n

M/A-COM’s MAAM28000-A1 is a wide band, MMIC amplifier
housed in a small 8-lead ceramic package. It includes two dis­tributed gain stages to obtain flat gain and a good, 50-ohm,
input and output impedance match over a very wide
bandwidth. The MAAM28000-A1 operates from a single
+10 V supply. It is fully monolithic, re q u i res no external
components, and is provided in a low-cost, user- f r i e n d l y ,
m i c rowave package.

The MAAM28000-A1 perf o rms well as a generic IF, driver or
b u ffer amplifier where high gain, excellent linearity and low
power consumption are important. Because of its wide band­width, the MAAM28000-A1 can be used in numerous com­m e rcial and government system applications, such as satellite
communications, RLL, EW and radar.

The MAAM28000-A1 is manufactured in-house using a re l i­able, 0.5-micron, GaAs MESFET process. This product is
100% RF tested to ensure compliance to perf o rmance
s p e c i f i c a t i o n s .

CR-3

Ordering Information

Part Number Package

MAAM28000-A1 8-Lead Ceramic
MAAM28000-A1G Gull Wing

V 2.00

Electrical Specifications

Test Conditions:TA= +25°C,ZO= 50 V,V

Parameter Test Conditions Units Min. Typ. Max.

Gain dB 14 17
Noise Figure 2 - 4 GHz dB 6.5 8.0

Gain Flatness dB ± 0.5
Input VSWR 1.6:1
Output VSWR 1.5:1
Output 1 dB Compression dBm +14
Input IP
Reverse Isolation dB 35
Bias Current mA 70 100

3

= +10 V, P

D D

4 - 6 GHz dB 5.5 6.5
6 - 8 GHz dB 4.5 6.0

= -30 dBm

I N

dBm +7

Wide Band GaAs MMIC Amplifier MAAM28000-A1

Parameter Absolute Maximum

V

DD

+14 volts
Input Power +20 dBm
Current 150 mA
Channel Temperature +150°C
Operating Temperature

2

-55°C to +100°C

Storage Temperature -65°C to +150°C

Absolute Maximum Ratings

1

Schematic

1. Operation of this device outside these limits may cause
permanent damage.

2.Typical thermal resistance ( jc) = +45°C/W

V 2.00

Typical Performance @ +25°C

GAIN v s F R E QUENCY

20.0

18.0

16.0

14.0

12.0

VSWR v sF R E QUENCY

3.0

2.5

Output

2.0

Input

1.5

10.0

1.0 3.0 5.0 7.0 9.0

FREQUENCY (GHz)

NOISE FIGURE vs F R E QUENCY

8

7

6

5

4

3

1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

FREQUENCY (GHz)

1.0

1.0 3.0 5.0 7.0 9.0

FREQUENCY (GHz)