M A COM MAAM26100-P1 Datasheet

GaAs MMIC Power Amplifier

Preliminary Specifications

2 - 6 GHz

Features

●

+30 dBm Saturated Output Power

●

18 dB Typical Gain

●

30% Power Added Efficiency

●

On-Chip Bias Network

●

DC Decoupled RF Input and Output

●

High Performance Ceramic Bolt Down Package

Description

M/A-COM’s MAAM26100-P1 is a GaAs MMIC two stage
high efficiency power amplifier in a high performance
bolt down ceramic package. The MAAM26100-P1 is a
fully monolithic design for operation in 50-ohm systems,
with an on-chip negative bias network which eliminates
the need for external bias circuitry.

The MAAM26100-P1 is ideally suited for driver amplifiers
and transmitter outputs in Electronic Warfare Jammers,
Missile Subsystems and Phased Array Radars.

M/A-COM’s MAAM26100-P1 is fabricated using a mature

0.5-micron gate length GaAs process. The process
features full passivation for increased performance
reliability.

CR-15

-C-

10X .050 MIN

.328 ±.010

.318 ±.010

.010 SQ.

ORIENTATION TAB

.115

-A­.020

MAAM26100-P1

.70

.085

10

±.010

.050

4X

.005±.002

Notes: (unless otherwise specified)

1. Dimensions are inches.

2. Tolerance: in .xxx = ±.010

.530

9

8

6

7

1

2

4

5

3

.010 ±.00310X

.1004X

.33

4X .06 X 45°

CHAMFER

.159

2X Ø

.096 THRU

Ø

.004 A BC

CERAMIC

.040

BASE PLATE

V1.A

-B-

M

.090MAX

Ordering Information

Part Number Package

MAAM26100-P1 Ceramic Bolt Down

Typical Electrical Specifications, T

Parameter Test Conditions Units Min. Typ. Max.

Small Signal Gain PIN≤ -10 dBm 2 - 6 GHz dB 18
Input VSWR PIN≤ -10 dBm 2 - 6 GHz 2.0:1
Output VSWR P
Output Power PIN= +15 dBm 2 - 6 GHz dBm +30
Power Added Efficiency PIN= +15 dBm 2 - 6 GHz % 30
Output IP

3

The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

≤ -10 dBm 2 - 6 GHz 2.2:1

IN

= +25°C, VDD= +8 V, VGG= -5 V

A

2, 5 & 6 GHz dBm 40

1

GaAs MMIC Power Amplifier MAAM26100-P1

V1.A

Absolute Maximum Ratings

1, 2

Parameter Absolute Maximum

V

DD

V

GG

Power Dissipation 8.4 W
RF Input Power +23 dBm
Channel Temperature 150°C
Storage Temperature -65°C to +150°C
Thermal Resistance 15°C/W

(Channel to Case)

1. Exceeding these limits may cause permanent damage.

2. Case Temperature (Tc) = +25°C

10 Volts

-10 Volts

Typical Performance @+25°C

GAIN vs FREQUENCY

22
20
18

(dB)

16

21

S

14
12
10

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

FREQUENCY (GHz)

Linear

at PIN= +15dBm

Functional Diagram

3,4

0.01uF

V

DD

10

IN

3

MAAM26100-P1

OUT

8

6

V

GG

GND
1,2,4,5,7,9

3. Nominal bias is obtained by first connecting -5 volts to pin 6
(VGG),followed by connecting +9 volts to pin 10 (VDD).
Note sequence.

4. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.

VSWR vs FREQUENCY

2.0

1.8

1.6

1.4

VSWR

1.2

1.0

S

11

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

FREQUENCY (GHz)

S

22

OUTPUT POWER vs FREQUENCY

= +15 dBm

@ P

IN

35
30
25

(dBm)

20

OUT

P

15
10

2.0 3.0 4.0 5.0 6.0

FREQUENCY (GHz)

The Preliminary Specifications Data Sheet Contains Typical Electrical Specifications Which May Change Prior to Final Introduction.

2

POWER ADDED EFFICIENCY vs FREQUENCY
@ PIN= +15 dBm

35
30
25
20

PAE (%)

15
10

2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

FREQUENCY (GHz)

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]