M A COM MA4ST563-134, MA4ST563, MA4ST562-134, MA4ST562, MA4ST561-134 Datasheet

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

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1

Specifications Subject to Change Without Notice.

V3.00

High Q Hyperabrupt
Tuning V aractors

MA4ST550 Series

Features

●

High Q

●

Usable Capacitance Change of 7:1

●

Low Reverse Leakage for Good Post
Tuning Drift Characteristics

●

Reproducible C-V Curves

Description

The MA4ST550 family of high Q Silicon Hyperabrupt
Tuning Varactors is available in a series of low parasitic
capacitance microwave packages or in chip form.
The MA4ST550 series of diodes is available with junction
capacitances of approximately 0.8 pF to 8.2 pF at -4 volts.
These diodes have capacitance change ratios as high
as 7:1.

Applications

The MA4ST550 series is appropriate for use in VCOs with
frequencies within the range of approximately 1-14 GHz
where a large capacitance change is required. These
diodes are suited for VCOs in missile seekers, telecom­munication systems and electronic warfare systems with
critical post tuning drift specifications.

Environmental Performance

All tuning varactors in ceramic packages are capable of
meeting the performance tests dictated by the methods
and procedures of the latest revisions of MIL-S-19500, MIL­STD-202 and MIL-STD-750 which specify mechanical,
electrical, thermal and other environmental tests common
to semiconductor products.

Case Styles

134

30 31

Absolute Maximum Ratings at 25°C

Parameter Absolute Maximum
Reverse V oltage Same as Breakdown Voltage
Operating Temperature - 65°C to +150°C
Storage Temperature - 65°C to +200°C
Temperature Coefficient 400 ppm/°C at -4 Volts

M/A-COM, Inc.

North America: Tel. [phone] ■ Asia/Pacific: Tel. [phone] ■ Europe: Tel. [phone]

Fax [phone] Fax [phone] Fax [phone]

2

Specifications Subject to Change Without Notice.

V3.00

High Q Hyperabrupt Tuning Varactors MA4ST550 Series

Electrical Specifications at 25°C

Breakdown Voltage = 22 Volts Minimum @ 10 Microamps
Reverse Current = 50 nAmps Maximum @ 20 Volts and 25°C

Total Capacitance

2,3

Total Capacitance

2,3

Typical

Model Case

1

@ - 4V (pF) @ - 20V (pF) @ - 4 Volts

Number Style Min./Max. Min./Max. 50 MHz

MA4ST551 30 0.72-0.88 0.30-0.38 650
MA4ST552 30 0.90-1.10 0.34-0.42 650
MA4ST553 30 1.08-1.32 0.38-0.48 600
MA4ST554 30 1.35-1.65 0.43-0.58 600
MA4ST555 30 1.62-1.98 0.51-0.68 550
MA4ST556 30 1.98-2.42 0.58-0.78 550
MA4ST557 30 2.43-2.97 0.68-0.88 500
MA4ST558 30 2.97-3.63 0.82-1.02 500
MA4ST559 30 3.51-4.29 0.93-1.18 450
MA4ST560 30 4.23-5.16 1.13-1.43 450
MA4ST561 30 5.04-6.16 1.33-1.63 450
MA4ST562 30 6.12-7.48 1.58-1.98 400
MA4ST563 30 7.38-9.02 1.88-2.38 400

3. The total capacitance values shown are for devices housed in case
style 30. Other case styles will result in different values due to different
case parsasitics. Case parasitics (CPand LS) are given for available
case styles along with the outline drawings in the appendix.

Case Styles

Notes:

1. The standard case style is 30.Other packages and chips shown at the
bottom of this page are available.When ordering, specify the desired
case style by adding the case designation as a suffix to the model
number, i.e.MA4ST552-134 is a 15 X 15 mil chip diode. See appendix
for complete dimensions.

2. Capacitance is measured at 1 MHz.

1056

1088



30 31 94 120 134